Browse > Article
http://dx.doi.org/10.9729/AM.2012.42.4.207

Synthesis and Characterization of a Pt/NiO/Pt Heterostructure for Resistance Random Access Memory  

Kim, Hyung-Kyu (School of Advanced Materials Science and Engineering, Sungkyunkwan University)
Bae, Jee-Hwan (School of Advanced Materials Science and Engineering, Sungkyunkwan University)
Kim, Tae-Hoon (School of Advanced Materials Science and Engineering, Sungkyunkwan University)
Song, Kwan-Woo (School of Advanced Materials Science and Engineering, Sungkyunkwan University)
Yang, Cheol-Woong (School of Advanced Materials Science and Engineering, Sungkyunkwan University)
Publication Information
Applied Microscopy / v.42, no.4, 2012 , pp. 207-211 More about this Journal
Abstract
We examined the electrical properties and microstructure of NiO produced using a sol-gel method and Ni nitrate hexahydrate ($Ni[NO_3]_2{\cdot}6H_2O$) to investigate if this NiO thin film can be used as an insulator layer for resistance random access memory (ReRAM) devices. It was found that as-prepared NiO film was polycrystalline and presented as the nonstoichiometric compound $Ni_{1+x}O$ with Ni interstitials (oxygen vacancies). Resistances-witching behavior was observed in the range of 0~2 V, and the low-resistance state and high-resistance state were clearly distinguishable (${\sim}10^3$ orders). It was also demonstrated that NiO could be patterned directly by KrF eximer laser irradiation using a shadow mask. NiO thin film fabricated by the sol-gel method does not require any photoresist or vacuum processes, and therefore has potential for application as an insulating layer in low-cost ReRAM devices.
Keywords
Resistance-switching; Resistance random access memory; NiO; Laser decomposition; Sol-gel method;
Citations & Related Records
연도 인용수 순위
  • Reference
1 Brockner W, Ehrhardt C, and Gjikaj M (2007) Thermal decomposition of nickel nitrate hexahydrate, $Ni(NO_{3})_{2}{\cdot}6H_{2}O$, in comparison to $Co(NO_{3})_{2}{\cdot}6H_{2}O $ and $Ca(NO_{3})_{2}{\cdot}4H_{2}O$. Thermochim. Acta. 456, 64-68.   DOI
2 Kim C H, Moon H B, Min S S, Jang Y H, and Cho J H (2009) Nanoscale formation mechanism of conducting filaments in NiO thin films. Solid State Commun. 149, 1611-1615.   DOI
3 Seo S, Lee M J, Seo D H, Jeoung E J, Suh D S, Joung Y S, Yoo I K, Hwang I R, Kim S H, Byun I S, Kim J S, Choi J S, and Park B H (2004) Reproducible resistance switching in polycrystalline NiO films. Appl. Phys. Lett. 85, 5655.   DOI   ScienceOn
4 Waser R, Dittmann R, Staikov G, and Szot K (2009) Redox-based resistive switching memories - nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21, 2632-2663.   DOI   ScienceOn
5 Bahari Molla Mahaleh Y, Sadrnezhaad S K, and Hosseini D (2008) NiO nanoparticles synthesis by chemical precipitation and effect of applied surfactant on distribution of particle size. J. Nanomater. 2008, 470595.
6 Beck A, Bednorz J G, Gerber C, Rossel C, and Widmer D (2000) Reproducible switching effect in thin oxide films for memory applications. Appl. Phys. Lett. 77, 139-141.   DOI   ScienceOn
7 Chang S H, Lee J S, Chae S C, Lee S B, Liu C, Kahng B, Kim D W, and Noh T W (2009) Occurrence of both unipolar memory and threshold resistance switching in a NiO film. Phys. Rev. Lett. 102, 026801.   DOI   ScienceOn
8 Gibbons J F and Beadle W E (1964) Switching properties of thin NiO films. Solid-State Electron. 7, 785-797.   DOI   ScienceOn
9 Kim D C, Seo S, Ahn S E, Suh D S, Lee M J, Park B H, Yoo I K, Baek I G, Kim H J, Yim E K, Lee J E, Park S O, Kim H S, Chung U, Moon J T, and Ryu B I (2006) Electrical observations of filamentary conductions for the resistive memory switching in NiO films. Appl. Phys. Lett. 88, 202102.   DOI   ScienceOn
10 Liu C, Chae S C, Lee J S, Chang S H, Lee S B, Kim D W, Jung C U, Seo S, Ahn S E, Kahng B, and Noh T W (2009) Abnormal resistance switching behaviours of NiO thin fi lms: possible occurrence of both formation and rupturing of conducting channels. J. Phys. D: Appl. Phys. 42, 015506   DOI
11 Park I S, Lee J H, Lee S W, and Ahn J H (2007) Resistance switching characteristics of $HfO_{2}$ film with electrode for resistance change random access memory. J. Nanosci. Nanotechnol. 7, 4139-4142.   DOI
12 Guan W, Long S, Hu Y, Liu Q, Wang Q, and Liu M (2009) Resistance switching characteristics of zirconium oxide containing gold nanocrystals for nonvolatile memory applications. J. Nanosci. Nanotechnol. 9, 723-726.   DOI
13 Inoue I H, Yasuda S, Akinaga H, and Takagi H (2008) Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: homogeneous/inhomogeneous transition of current distribution. Phys. Rev. B 77, 035105.   DOI   ScienceOn
14 Ishihara T, Ohkubo I, Tsubouchi K, Kumigashira H, Joshi U S, Matsumoto Y, Koinuma H, and Oshima M (2008) Electrode dependence and fi lm resistivity effect in the electric-fi eld-induced resistance-switching phenomena in epitaxial NiO films. Mater. Sci. Eng. B 148, 40-42.   DOI
15 Park M H, Lee J W, Lee Y I, Lee J H, Hwang J H, Kim H K, and Yang C W (2011) Patterning of catalysts for the selective growth of carbon nanotubes using laser irradiation of nickel nitrate. J. Nanosci. Nanotechnol. 11, 602-605.   DOI
16 Sawa A, Fujii T, Kawasaki M, and Tokura Y (2005) Interface transport properties and resistance switching in perovskite-oxide heterojunctions. Proc. SPIE 5932, 59322C.
17 Seo S, Lee M J, Kim D C, Ahn S E, Park B H, Kim Y S, Yoo I K, Byun I S, Hwang I R, Kim S H, Kim J S, Choi J S, Lee J H, Jeon S H, Hong S H, and Park B H (2005) Electrode dependence of resistance switching in polycrystalline NiO films. Appl. Phys. Lett. 87, 263507.   DOI
18 Zhuang W W, Pan W, Ulrich B D, Lee J J, Stecker L, Burmaster A, Evans D R, Hsu S T, Tajiri M, Shimaoka A, Inoue K, Naka T, Awaya N, Sakiyama A, Wang Y, Liu S Q, Wu N J, and Ignatiev A (2002) Novell colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM). In: Electron Devices Meeting, 2002. IEDM '02. International, pp. 193-196, (IEEE Conference Publications, Piscataway).