• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.5 no.1
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• pp.55-64
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• 1993

A numerical investigation has been carried out for the two-dimensional flow and pressure characteristics in a clean room equipped with two kinds of filters and four access panels. The distributed pressure resistance concept was applied to describe the momentum loss in filters and access panels. As a result, the velocity profile in the clean room became rather smooth by the presence of access panels. Furthermore, the average pressure drop of each access panel reached the same value so that the ratio of the flow rate should be the same at any zone. The closing of an access panel with maintaining the other access panels being opened had influenced on the velocity distribution in lower two thirds of left half space of the clean room.

• Applied Microscopy
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• v.42 no.4
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• pp.207-211
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• 2012

We examined the electrical properties and microstructure of NiO produced using a sol-gel method and Ni nitrate hexahydrate ($Ni[NO_3]_2{\cdot}6H_2O$) to investigate if this NiO thin film can be used as an insulator layer for resistance random access memory (ReRAM) devices. It was found that as-prepared NiO film was polycrystalline and presented as the nonstoichiometric compound $Ni_{1+x}O$ with Ni interstitials (oxygen vacancies). Resistances-witching behavior was observed in the range of 0~2 V, and the low-resistance state and high-resistance state were clearly distinguishable (${\sim}10^3$ orders). It was also demonstrated that NiO could be patterned directly by KrF eximer laser irradiation using a shadow mask. NiO thin film fabricated by the sol-gel method does not require any photoresist or vacuum processes, and therefore has potential for application as an insulating layer in low-cost ReRAM devices.

• Transactions of the Korean Society of Mechanical Engineers
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• v.17 no.8
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• pp.2110-2121
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• 1993

A numerical investigation has been carried out for the flow characteristics after exchange of some filters from the original layer to the new low pressure loss layer with equal filtering efficiency. The solution domain includes upper plenum, filter layer, clean space, access panels, and lower plenum. The concept of the distributed pressure resistance was applied to describe the momentum loss in filter layer and access panels. The evolution of the flow field is simulated using the low Reynolds number k-.epsilon. over bar turbulent model and SIMPLE algorithm based on the finite volume method. As a result, after the exchange of filter layer the power requirement can be reduced by 8-9 percent. The results also demonstrate that the perpendicularity of the flow near access panels may become worse at new filter layer than origianl filter layer. But the situation can be recovered by adjusting the jopening ratio of access panels.

• Journal of IKEEE
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• v.17 no.3
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• pp.229-233
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• 2013

We investigated electrical conduction and resistance switching behavior of the Ag/ZnO/Ti structures for random access memory devices. These films were prepared on glass substrate by dc sputtering technique at room temperature. The resistance switching follows unipolar switching mode with small switching voltages (0.4 V - 0.6 V). Two electrical conduction mechanisms dominating the LRS and HRS are Ohmic and trap-controlled space charge limited current, respectively. These both conductions are consistent with the filamentary model. Based on the filamentary model, the switching mechanism was also interpreted.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.83-87
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• 2023

In the field of electronics and semiconductor technology, innovative semiconductor material research to replace Si is actively ongoing. However, while research on alternative materials is underway, there is a significant lack of studies regarding the relationship between 2D materials used as channels in transistors, especially parasitic resistance, and RF (radio frequency) applications. This study systematically analyzes the impact on electrical performance with a focus on various transistor structures to address this gap. The research results confirm that access resistance and contact resistance act as major factors contributing to the degradation of semiconductor device performance, particularly when highly scaled down. As the demand for high-frequency RF components continues to grow, establishing guidelines for optimizing component structures and elements to achieve desired RF performance is crucial. This study aims to contribute to this goal by providing structural guidelines that can aid in the design and development of next-generation RF transistors using 2D materials as channels.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.69-70
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• 2006

A detailed Investigation of cell structure and electrical characteristic in chalcogenide-based phase-change random access memory(PRAM) devices is presented. We used compound of Ge-Sb-Te material for phase-change cell. A novel bottom electrode structure and manufacture are described. We used heat radiator structure for improved reset characteristic. A resistance change measurement is performed on the test chip. From the resistance change, we could observe faster reset characteristic.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.197-204
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• 2002

DRAM, SRAM, and FLASH memory are three major memory devices currently used in most electronic applications. But, they have very distinct attributes, therefore, each memory could be used only for limited applications. MRAM (Magneto-resistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. To be a commercially competitive memory device, scalability is an important factor as well. This paper is testing the actual electrical parameters and the scaling factors to limit MRAM technology in the semiconductor based memory device by an actual integration of MRAM core cell. Electrical tuning of MOS/MTJ, and control of resistance are important factors for data sensing, and control of magnetic switching for data writing.

• The Journal of the Korean dental association
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• v.56 no.10
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• pp.572-580
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• 2018

Adequate access cavity is the key to achieving endodontic success. The aims of the access cavity can be considered as follows: 1) Creation of a smooth unimpeded pathway for instruments to canal orifices 2) Removal of the entire roof of the pulp chamber in order to inspect the pulp floor, 3) Preservation of natural tooth substance consistent with the above. Recently, contracted endodontic cavities based on minimally invasive endodontics has introduced. This has the benefit of preserving the pericervical dentin more than traditional access cavity with achieving long-term success. However, some studies reported controversial results regarding root canal detection, instrumentation efficacy (noninstrumented canal area, hard tissue debris accumulation, canal transportation, and centering ratio) as well as fracture resistance. Therefore, further studies are required for accepting contracted access cavity, and modified form of traditional and contracted access cavity could be considered.

• Journal of Communications and Networks
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• v.8 no.1
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• pp.21-27
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• 2006

We present and analyze a class of limited sensing random access algorithms with powerful properties. The algorithms are implementable in wireless mobile environments and their operational properties are simple. Their throughput in the worst case of the limit Poisson user model is 0.4297, while this throughput degrades gracefully in the presence of channel feedback errors.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.950-953
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• 1999

Spin tunneling giant magnetoresistance effect was studied to utilize in the application of random access memory. Ferromagnetic/Insulator/Ferromagnetic films were sputtered on glass substrates and perpendicular current was applied. Measurements of magneto- resistance of the junction showed 8.6% of MR ratio. Voltage output depends on the magnetization directions of the write line and read line, thus enabling the system to be used as a random access memory