• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.2032-2034
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• 2000

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface slew discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with the do bias voltage of -10V showed lower discharge voltage and lower erosion rate by ion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.601-604
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• 2007

In this paper, we report the wall voltage transfer characteristic between sustain electrodes according to the address bias voltage in a 3-electrodes surface discharge type ac PDP by the VT close curve measurement technique. The result shows the change of wall voltage according to the gap voltage variation depends on the address bias voltage.

• Transactions on Electrical and Electronic Materials
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• 제14권4호
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• pp.177-181
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• 2013

In this paper, silicon solar cells are analyzed regarding power conversion efficiency by changed capacitance in the depletion region. For the capacitance control in the depletion region of silicon solar cell was applied for 10, 20, 40, 80, 160 and 320 Hz frequency band character and alternating current(AC) voltage with square wave of 0.2~1.4 V. Academically, symmetry formation of positive and negative change of the p-n junction is similar to the physical effect of capacitance. According to the experiment result, because input of square wave with alternating current(AC) voltage could be observed to changed capacitance effect by indirectly method through non-linear power conversion (Voltage-Current) output. In addition, when input alternating current(AC) voltage in the silicon solar cell, changed capacitance of depletion region with the forward bias condition and reverse bias condition gave a direct effect to the charge mobility.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.142-145
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• 2000

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with the dc bias voltage of -10V showed lower discharge voltage and lower erosion rate by ion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process.

• Transactions on Electrical and Electronic Materials
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• 제7권5호
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• pp.235-239
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• 2006

Charge dynamics in polymeric materials after aged under ac electric field using the pulsed electroacoustic (PEA) technique is reported. The emphasis is placed on charge decay. The charge dynamics of the ac aged additive free low density polyethylene (LDPE) samples under dc bias differ from the sample without ac ageing, indicating changes brought in by ac ageing. It is believed that a slow decay rate of charge in the ac aged sample is related to the formation of deep traps in the material. However, chemical analysis by infrared spectroscope (FTIR) and Raman microscope reveals no significant chemical changes taken place in the bulk of the material after ac ageing. Further experiments on irradiated LDPE have revealed a similar behaviour, i.e. the charge decay is slower in irradiated samples than that of fresh sample. The findings presented clearly indicate that space charge measurement can be used as a diagnostic tool to monitor ageing in polymeric materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.242-242
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• 2009

Fabrication of Anodic aluminum oxide under DC vias condition has been studied. When bias and time of anodic aluminum oxide process change, the hole distance and diameter size change. Comparison of fabricated AAO between AC vias and DC vias condition has been studied in this experiment. The first and second anodization of one aluminum is done by using DC and AC power supplier. And first and second anodization of another aluminum is done by DC power supplier. The size of the aluminum is $1cm{\times}3cm$, and second anodic aluminum oxide process takes about 45min. It is found that the hexagonal shape appears on the surface of the AAO. AC power source can fabricate aao which have a nano hole array. We can see that the hole on the surface of the AC vias has a better rounded hole than DC vias AAO. we need more data so we can get characteristic about AC power generated AAO.

• E2M - 전기 전자와 첨단 소재
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• 제10권7호
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• pp.692-699
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• 1997

The silicon doped $Al_{0.33}$G $a_{0.67}$As were grown by molecular beam epitaxy. The electroreflectance(ER) spectra of Schottky barrier Au/n-Al/suu x/G $a_{1-x}$ As have been measured at various modulation voltage( $V_{ac}$ ) and dc bias voltage( $V_{bias}$). From the observed Franz-Keldysh oscillations(FKO) peak, the band gap energy of the $Al_{x}$G $a_{1-x}$ As is 1.91 eV which corresponds to an Al composition of 33%. The internal electric field( $E_{i}$)of this sample is 2.96$\times$10$^{5}$ V/cm. As the modulation voltage( $V_{ac}$ ) is changed, the line shape of ER signal does not change but its amplitude varies linearly. The amplitude as a function of modulation voltage has saturated at 0.8 V. The internal electric field has decreased from 6.47$\times$10$^{5}$ V/cm to 2.00$\times$10$^{5}$ V/cm as the dc bias voltage( $V_{bias}$) increases from -3.5 V to +0.8 V. The values of built-in voltage( $V_{bi}$ ) and carrier concentration(N) determined from the plot of $V_{bias}$ from the plot of $V_{bias}$ versus $E_{i}$$^{2}$ are 0.855 V and 3.83$\times$10$^{17}$ c $m^{-3}$ , respectively.ively.y.y.y.

• 한국도로학회논문집
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• 제10권2호
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• pp.47-55
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• 2008

본 논문에서는 3차원 유한요소법과 층탄성프로그램인 BISAR를 통해 얇은 아스팔트 콘크리트 표층의 피로균열 수명에 영향을 줄 수 있는 아스팔트 표층에서의 예측 인장변형률 결과를 광폭타이어와 바이어스 프라이 타이어를 이용하여 비교하였다. 본 논문에서는 11R22.5와 $10{\times}20$ bias ply 타이어의 접지압력 분포도를 분석하였으며, 서로 다른 해석방법을 이용하여 아스팔트 표층 하단부와 상단부에서의 예측인장변형률을 비교하였다. 분석결과, 두 타이어의 접지압 분포는 유사했지만 11R22.5광폭타이어가 $10{\times}20$ bias ply타이어와 비교해 상당히 큰 연직방향 접지압력을 보였다. 타이어 중앙에서 아스팔트 콘크리트 표층 하단부에서의 예측 인장변형률은 타이어 접지면적을 측정하여 충탄성프로그램인 BISAR에 적용한 BM해석법이 컸으며, 타이어 가장자리로부터 3.5cm 떨어진 곳에서의 상층부 예측 인장변형률은 3차원 접지압을 이용한 3차원유한요소법에 의한 해석이 가장 큰 값을 보였다.

• 센서학회지
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• 제24권3호
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• pp.181-187
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• 2015

The magnetoelectric characteristics on layered $Fe_{78}B_{13}Si_9/PZT$ and $Fe_{78}B_{13}Si_9/PZT/Fe_{78}B_{13}Si_9$($t_m=0.017$, 0.034mm) composites by epoxy bonding for magnetic field sensor were investigated in the low-frequency range and resonance frequency range. The optimal bias magnetic field $H_{dc}$ of these samples was about 23~63 Oe range. The Me coefficient of $Fe_{78}B_{13}Si_9/PZT/Fe_{78}B_{13}Si_9(t_m=0.034mm)$ composites reaches a maximum of $186mV/cm{\cdot}Oe$ at $H_{dc}=63Oe$, f=50 Hz and a maximum of $1280mV/cm{\cdot}Oe$ at $H_{dc}=63Oe$, resonance frequency $f_r=95.5KHz$. The output voltage shows linearity proportional to ac fields $H_{ac}$ and is about U=0~130.6 mV at $H_{ac}=0{\sim}7Oe$, f=50 Hz, U=0~12.4 V at $H_{ac}=0{\sim}10Oe$, $f_r=95.5KHz$(resonance frequency). The optimal frequency(f=50 Hz) of this sample is around the utility ac frequency(f=60 Hz). Therefore, this sample will allow for ac magnetic field sensor at utility frequency and low bias magnetic fields $H_{dc}$.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(5)
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• pp.231-234
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• 2002

In this paper, we propose an efficient bias circuit for hearing aid using discrete BJT. The collector feedback bias circuit, widely used for the hearing aid, has a resister for negative feedback. As the resistor affects AC and DC simultaneously, it is quite difficult to adjust amplifier gain without changing DC bias point. The previous bias circuit also has weak point to be oscillated by the positive feedback of power noise if gain of hearing aid is high. In the proposed circuit, we can reduce the two weak points of the previous circuit by adding a resistor which is ${\beta}$ times larger than collector resistor between base of BJT and power supply.