• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
• /
• 2000.06a
• /
• pp.180-186
• /
• 2000

Friction materials with four different sizes of zircon - l${\mu}{\textrm}{m}$, 6${\mu}{\textrm}{m}$, 75${\mu}{\textrm}{m}$, 140${\mu}{\textrm}{m}$- were investigated to evaluate the size effects of abrasive particles used in the automotive brake pads on brake performance. Although the brake pads with the largest size of zircon showed a good frictional stability and low wear, rotors were severely abraded due to the aggressiveness of coarse Bircon. As the siBe of zircon decreased. friction force and the amplitude of friction coefficient increased. Considering the above results, abrasive materials were thought to destroy transfer film and the extent of the destruction depends on the size of zircon. The small size zircon was not effective in developing a transfer layer on the rotor surface while minimizing the damage on the counter surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.487-487
• /
• 2009

One of the critical consumables in chemical mechanical polishing (CMP) is a specialized solution or slurry, which typically contains both abrasives and chemicals acting together to planarize films. In single abrasive slurry (SAS), the solid phase consists of only one type of abrasive particle. On the other hand, mixed abrasive slurry (MAS) consists of a mixture of at least two types of abrasive particles. In this paper, we have studied the CMP characteristics of mixed abrasive slurry (MAS) retreated by adding of $CeO_2$ abrasives within 1:10 diluted silica slurry (DSS). The slurry designed for optimal performance should produce reasonable removal rates, acceptable polishing selectivity with respect to the underlying layer, low surface defects after polishing, and good slurry stability. The modified abrasives in MAS are evaluated with respect to their particle size distribution, surface morphology, and CMP performances such as removal rate and non-uniformity. As an experimental result, we obtained the comparable slurry characteristics compared with original silica slurry in the viewpoint of high removal rate and low non-uniformity.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 1997.10a
• /
• pp.935-938
• /
• 1997

Recently, the minimum line width shows a tendency to decrease and the multi-level increase in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as micro-scratches, abrasive contaminations, and non-uniformity of polished wafer edges. Wet etching include of Spin-etching can improve he defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(INterlayer-Dielectric) was removed by CMP and wet-etching methods in order to investigate the superiority of wet etching mechanism. In the thin film wafer, the results were evaluated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And pattern step height was also compared for planarization characteristics of the patterned wafer.

• Journal of Sensor Science and Technology
• /
• v.20 no.3
• /
• pp.187-192
• /
• 2011

Abrasive blaster is similar to sand blaster, and effectively removes hard and brittle materials. Exiting abrasive blaster has applied to rough working such as deburring and rough finishing. As the need for machining of ceramics, semiconductor, electronic devices and LCD are increasing, micro abrasive blaster was developed, and became the inevitable technique to micromachining. This paper describes the performance of the micro blaster in MEMS process of glass and succeed in domestically producing complete micro blaster. Diameter of hole and width of line in this etching is 100 ${\mu}m$ ~ 1000 ${\mu}m$. Experimental results showed good performance in micro channel and hole in glass wafer. Therefore, this micro blaster could be effectively applied to the micro machining of semiconductor, micro PCR chip.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.6
• /
• pp.465-470
• /
• 2003

The chemical mechanical polishing (CMP) process has been widely used for the global planarization of multi-layer structures in semiconductor manufacturing. The CMP process can be optimized by several parameters such as equipment, consumables (pad, backing film and slurry), process variables and post-CMP cleaning. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, the slurry dominates more than 40 %. In this paper, we have studied the CMP characteristics of diluted silica slurry by adding of raw alumina abrasives and annealed alumina abrasives. As an experimental result, we obtained the comparable slurry characteristics compared with original silica slurry in the view-point of high removal rate and low non-uniformity. Therefore, we can reduce the cost of consumables(COC) of CMP process for ULSI applications.

• Tribology and Lubricants
• /
• v.27 no.1
• /
• pp.7-12
• /
• 2011

Interest in advanced machining process such as AJM(abrasive jet machining) and CMP(chemical-mechanical polishing) using micro/nano-sized abrasives has been on the increasing demand due to wide use of super alloys, composites, semiconductor and ceramics, which are difficult to or cannot be processed by traditional machining methods. In this paper, the effects of pressure, wafer moving velocity and fluid viscosity were investigated by 2-dimensional finite element analysis method considering slurry fluid flow. From the investigation, it could be found that the simulation results quite corresponded well to the Preston's equation that describes pressure/velocity dependency on material removal. The result also revealed that the stress and corresponding material removal induced by the collision of particle may decrease under relatively high wafer moving speed due to the slurry flow resistance. In addition, the increase in slurry fluid viscosity causes the reduction of material removal rate. It should be noted that the viscosity effect can vary with the shape of abrasive particle.

• Tribology and Lubricants
• /
• v.35 no.5
• /
• pp.274-285
• /
• 2019

Chemical mechanical polishing (CMP), which is a material removal process involving chemical surface reactions and mechanical abrasive action, is an essential manufacturing process for obtaining high-quality semiconductor surfaces with ultrahigh precision features. Recent rapid growth in the industries of digital devices and semiconductors has accelerated the demands for processing of various substrate and film materials. In addition, to solve many issues and challenges related to high integration such as micro-defects, non-uniformity, and post-process cleaning, it has become increasingly necessary to approach and understand the processing mechanisms for various substrate materials and abrasive particle behaviors from a tribological point of view. Based on these backgrounds, we review recent CMP R&D trends in this study. We examine experimental and analytical studies with a focus on substrate materials and abrasive particles. For the reduction of micro-scratch generation, understanding the correlation between friction and the generation mechanism by abrasive particle behaviors is critical. Furthermore, the contact stiffness at the wafer-particle (slurry)-pad interface should be carefully considered. Regarding substrate materials, recent research trends and technologies have been introduced that focus on sapphire (${\alpha}$-alumina, $Al_2O_3$), silicon carbide (SiC), and gallium nitride (GaN), which are used for organic light emitting devices. High-speed processing technology that does not generate surface defects should be developed for low-cost production of various substrates. For this purpose, effective methods for reducing and removing surface residues and deformed layers should be explored through tribological approaches. Finally, we present future challenges and issues related to the CMP process from a tribological perspective.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2008.11a
• /
• pp.89-90
• /
• 2008

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2005.05a
• /
• pp.47-47
• /
• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.39-42
• /
• 2002

Recently, CMP (chemical mechanical polishing) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, COO (cost of ownership) and COC (cost of consumables) were relatively increased because of expensive slurry. In this paper, we have studied the possibility of recycle of reused silica slurry in order to reduce the costs of CMP slurry. The post-CMP thickness and within-wafer non-uniformity(WIWNU) were measured as a function of different slurry composition. As a experimental result, the performance of reused slurry with annealed silica abrasive of 2 wt% contents was showed high removal rate and low non-uniformity. Therefore, we propose two-step CMP process as follows In the first-step CMP, we can polish the thick and rough film surface using remaked slurry, and then, in the second-step CMP, we can polish the thin film and fine pattern using original slurry. In summary, we can expect the saving of high costs of slurry.