• Title/Summary/Keyword: AS₂O₃

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Determining Mechanical Properties of ZrO2 Composite Ceramics by Weibull Statistical Analysis (와이블 통계 해석에 의한 ZrO2 복합 세라믹스의 기계적 특성)

  • Kim, Seon Jin;Kim, Dae Sik;Nam, Ki Woo
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.39 no.10
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    • pp.955-962
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    • 2015
  • The Vickers test can be used for all types of materials, and it has one of the widest scales among hardness tests. The hardness may be considered as a probability variable when evaluating the mechanical properties of materials. In this study, we investigate the statistical properties of the bending strength and Vickers hardness in $ZrO_2$ monolithic and $ZrO_2/SiC$ composites depending on the amount of $TiO_2$ additives. The bending strength and Vickers hardness were found to agree well with the Weibull probability distribution. We evaluate the scale parameter and shape parameter in as-received $ZrO_2$ and $ZrO_2/SiC/TiO_2$ ceramics, as well as their heat treated ceramics. We also evaluate the parameters in accordance with the increase in in the indentation load.

A Study on the microstructure and Surge Characteristics of ZnO varistors for distribution Arrester (배전급 피뢰기용 ZnO 바리스터 소자의 미세구조 및 서지 특성에 관한 연구)

  • 김석수;조한구;박태곤;박춘현;정세영;김병규
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.2
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    • pp.190-197
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    • 2002
  • In this thesis, ZnO varistors with various formulation, such as A∼E, were fabricated according to ceramic fabrication method. The microstructure, electrical properties, and surge characteristics of ZnO varistors were investigated according to ZnO varistors with various formulation. In the microstructure, A∼E\`s ZnO varistor ceramics sintered at 1130$\^{C}$ was consisted of ZnO grain(ZnO), spinel phase (Zn$\_$2.33/Sb$\_$0.67/O$\_$4/), Bi-rich phase(Bi$_2$O$_3$) and intergranuler phase, wholly. Lightning impulse residual voltage of A, B, C and E\`s ZnO varistors suited standard characteristics, below 12kV at current of 5kA. On the contrary, D\`s ZnO varistor exhibited high residual voltage as high reference voltage. In the accelerated aging test, leakage current and watt loss of B, C and D\`s ZnO varistors increases abruptly with stress time under the first a.c. stress(115$\^{C}$/3.213kV/300h). Consequently, C varistor exhibited a thermal run away. On the contrary, leakage current and watt loss of A and C\`s ZnO varistors which show low initial leakage current exhibited constant characteristics. After high current impulse test, A\`s ZnO varistor has broken the side of varistor but impulse current flowed. On the contrary, E\`s ZnO Varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After long duration impulse current test, E\`s ZnO varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After high current impulse test and long duration impulse current test, E\`s ZnO varistor exhibited very good characteristics which variation rate of residual voltage is 1.4% before and after test.

The Effect of Vanadium(V) Oxide Content of V2O5-WO3/TiO2 Catalyst on the Nitrogen Oxides Reduction and N2O Formation (질소산화물 환원과 N2O 생성에 있어서 V2O5-WO3/TiO2 촉매의 V2O5 함량 영향)

  • Kim, Jin-Hyung;Choi, Joo-Hong
    • Korean Chemical Engineering Research
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    • v.51 no.3
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    • pp.313-318
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    • 2013
  • In order to investigate the effect of $V_2O_5$ loading of $V_2O_5-WO_3/TiO_2$ catalyst on the NO reduction and the formation of $N_2O$, the experimental study was carried out in a differential reactor using the powder catalyst. The NO reduction and the ammonia oxidation were, respectively, investigated over the catalysts compose of $V_2O_5$ content (1~8 wt%) based on the fixed composition of $WO_3$ (9 wt%) on $TiO_2$ powder. $V_2O_5-WO_3/TiO_2$ catalysts had the NO reduction activity even under the temperature of $200^{\circ}C$. However, the lowest temperature for NO reduction activity more than 99.9% to treat NO concentration of 700 ppm appeared at 340 with very limited temperature window in the case of 1 wt% $V_2O_5$ catalyst. And the temperature shifted to lower one as well as the temperature window was widen as the $V_2O_5$ content of the catalyst increased, and finally reached at the activation temperature ranged $220{\sim}340^{\circ}C$ in the case of 6 wt% $V_2O_5$ catalyst. The catalyst of 8 wt% $V_2O_5$ content presented lower activity than that of 8 wt% $V_2O_5$ content over the full temperature range. NO reduction activity decreased as the $V_2O_5$ content of the catalyst increased above $340^{\circ}C$. The active site for NO reduction over $V_2O_5-WO_3/TiO_2$ catalysts was mainly related with $V_2O_5$ particles sustained as the bare surface with relevant size which should be not so large to stimulate $N_2O$ formation at high temperature over $320^{\circ}C$ according to the ammonia oxidation. Currently, $V_2O_5-WO_3/TiO_2$ catalysts were operated in the temperature ranged $350{\sim}450^{\circ}C$ to treat NOx in the effluent gas of industrial plants. However, in order to save the energy and to reduce the secondary pollutant $N_2O$ in the high temperature process, the using of $V_2O_5-WO_3/TiO_2$ catalyst of content $V_2O_5$ was recommended as the low temperature catalyst which was suitable for low temperature operation ranged $250{\sim}320^{\circ}C$.

Control of carrier concentrations by addition of $B_{2}O_{3}$ in Si-doped vertical gradient freeze (VGF) GaAs single crystal growth (수직경사응고(VGF)법에 의한 Si 도핑 GaAs 단결정 성장시 $B_{2}O_{3}$ 첨가에 따른 캐리어 농도 변화)

  • Bae, So-Ik;Han, Chang-Woon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.19 no.2
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    • pp.75-78
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    • 2009
  • Si-doped GaAs single crystals were grown by vertical gradient freeze using PBN crucibles. The amount of oxide layer $B_{2}O_{3}$ in PBN crucible was changed($0{\sim}0.2wt%$) and measured the concentration of carriers. The segregation coefficients of Si in GaAs melt decreased rapidly from initial 0.1 to 0.01 as the amount of $B_{2}O_{3}$ increases. At the same time, concentration of carriers was shown to decrease. It is likely that the reaction between dopant Si and $B_{2}O_{3}$ in GaAs melt results in the reduction of Si dopants(donor) while increase in the amount of boron(acceptor). The thin layer of $B_{2}O_{3}$ glass in PBN crucible was proved to be a better way to reduce defect formation rather than the total amount of $B_{2}O_{3}$.

A Study on the Determinants of Acceptance of Beacon as an O2O Marketing Media: Focusing on the Difference between Beacon Accepter and Non-accepter (O2O 마케팅 수단으로서 비콘의 수용에 영향을 미치는 요인에 관한 연구: 비콘 수용자와 비수용자의 차이를 중심으로)

  • Choi, Min-Wook
    • Journal of the Korea Convergence Society
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    • v.10 no.5
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    • pp.125-131
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    • 2019
  • This study tries to grasp the factor that affects the acceptance of beacon as an O2O marketing tool. This study examined whether there is a difference between beacon accepter as a means of marketing communication and non-accepter in terms of related variables. As a result, there were significant differences between beacon perceiver and non-perceiver in 'smartphone usage' and 'brand consciousness'. In order to understand the predictive variables influencing beacon acceptance as a means of marketing communication, this study used 'perceiving beacon as a marketing communication media' as a dependent variable to perform logistic regression analysis. As a result of the analysis, it was found that 'smartphone usage' and 'brand consciousness' were the predictive variables affecting beacon perceiving. This study tried to analysis the results in the viewpoint of perceived usefulness and ease-of-use which were insisted by TAM.

Characteristics of As-doped ZnO thin films with various buffer layer temperatures prepared by PLD method (PLD법을 이용한 Buffer Layer 증착온도에 따른 As-doped ZnO 박막의 특성)

  • Lee, Hong-Chan;Shim, Kwang-Bo;Oh, Young-Jei
    • Journal of Sensor Science and Technology
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    • v.15 no.2
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    • pp.84-89
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    • 2006
  • Highly concentrated p-type ZnO thin films can be obtained by doping of N, P and As elements. In this study, undoped ZnO buffer layers were prepared on a (0001) sapphire substrate by a ultra high vaccum pulsed laser deposition(UHV-PLD) method. ZnO buffer layers were deposited with various deposition temperature($400{\sim}700^{\circ}C$) at 350 mtorr of oxygen working pressure. Arsenic doped(1 wt%) ZnO thin films were deposited on the ZnO buffer layers by UHV-PLD. Crystallinity of the samples were evaluated by X-ray diffractometer and scanning electron microscopy. Optical, electrical properties of the ZnO thin films were estimated by photoluminescence(PL) and Hall measurements. The optimal condition of the undoped ZnO buffer layer for the deposition of As-doped ZnO thin films was at $600^{\circ}C$ of deposition temperature.

A STUDY ON THE DEVELOFMENT OF CARD URIJESR USING DOMESTIC RESOURCES (국내자원(國內資源)을 활용(活用)한 가탄재(加炭材)의 개발(開發)에 관(關)한 연구(硏究))

  • Choe, Jeong-Gil;Kim, Dong-Ok
    • Journal of Korea Foundry Society
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    • v.2 no.3
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    • pp.16-24
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    • 1982
  • For the purpose of development of domestic carburizer, when the basicity of ash in carburizer was changed from $Na_2O/Al_2O_3+SiO_2$ ; 0.06 to $Na_2O/Al_2O_3+SiO_2$ ; 0,196wt%, using $Na_2O$ as flux for domestic graphite resource (Bong Myung armorphous graphite), carburizing efficiency was improved as basicity increased, optimum basicity value was $Na_2O/Al_2O_3+SiO_2$ ; 0.151. This means that $Na_2O$ contributed to lower viscosity of slag and raise occurence probability of specific reaction surface between molten iron and carburizer. The experiment of effect of general characteristics offecting carburizing ability of this carburizer was performed, the result is that 10/30 mesh was optimum size of the carburizer and as carbon equivalent of molten iron was higher, carburizing ratio was lowered, but when si concentration was below 1.8% in general cast iron melting region, recovery showed 75-85%. As agitation rate of molten iron and temperature interval were higher, Carburizing ratio was increased and showed max, 94%. Desulfurizing phenomena of molten iron by $Na_2O$ in carburizer didn't appear.

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Preparation of SiO2-CuO-CeO2 Composite Powders and Its Thin Film Templated with Oxalic Acid

  • Son, Boyoung;Jung, Miewon
    • Korean Journal of Materials Research
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    • v.22 no.10
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    • pp.526-530
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    • 2012
  • Silica-based ceramic-matrix composites have shown promise as advanced materials for many applications such as chemical catalysts, ceramics, pharmaceuticals, and electronics. $SiO_2$-CuO-$CeO_2$ multi-component powders and their thin film, using an oxalic acid template as a chelating agent, have larger surface areas and more uniform pore size distribution than those of inorganic acid catalysts. $SiO_2$-CuO-$CeO_2$ composite powders were synthesized using tetraethylorthosilicate, copper (II) nitrate hemi (pentahydrate), and cerium (III) nitrate hexahydrate with oxalic acid as template or pore-forming agent. The process of thermal evolution, the phase composition, and the surface morphology of these powders were monitored by thermogravimetry-differential thermal analysis (TG-DTA), X-ray diffractometry (XRD), field-emission scanning electron microscopy (FE-SEM), and energy dispersive X-ray spectrometry (EDXS). The mesoporous property of the powders was observed by Brunner-Emmett-Teller surface (BET) analysis. The improved surface area of this powder template with oxalic acid was $371.4m^2/g$. This multi-component thin film on stainless-steel was prepared by sol-gel dip coating with no cracks.

Structural and Optical Properties of ZnO/Glass Thin Films Grown by Radio-Frequency Magnetron Sputtering with a Powder Target (ZnO 분말 타겟을 스퍼터링하여 Glass 기판위에 증착한 ZnO 박막의 구조적, 광학적 특성)

  • Sun, J.H.;Kang, H.C.
    • Journal of the Korean Vacuum Society
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    • v.18 no.5
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    • pp.394-401
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    • 2009
  • This paper reports the structural and optical properties of ZnO/glass thin films grown by radio-frequency magnetron sputtering with a powder target. In contrast to ZnO ceramic target typically used, a ZnO raw powder target was sputtered in this study. ZnO grew with the (0002) preferred orientation along the surface normal direction. Initially, the surface of ZnO thin films was flat considerably and then it became rougher as the thickness increased. The optical transmittance was as high as 88% in the range of 400-1000 nm. The bandgap energy of 3.23 eV at the 220 nm thick sample was estimated.

The Electric Properties of SrTiO$_3$Varistor Prepared by Co-precipitation Process (공침법으로 제초한 SrTiO$_3$바리스터의 전기적 특성)

  • 이종필;신현창;최정철;최승철
    • Journal of the Microelectronics and Packaging Society
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    • v.7 no.3
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    • pp.7-11
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    • 2000
  • The low-voltage driven $SrTiO_3$ceramic varistor device was fabricated from $SrTiO_3$ powders prepared by co-precipitation method with $CuO-SiO_2$additives. Compare with conventional process, this process has advantages such as the reduction of the sintering temperature of $SrTiO_3$ ceramics by 100-$150^{\circ}C$ and the simplification of processing procedure. The non-linear coefficient value ($\alpha$) of the varistor showed 8.47 when it was sintered at $1350^{\circ}C$ for 2 h with 5 wt% additives in reducing atmosphere of 5% $H_2/N_2$ mixed gas. The low-voltage driven $SrTiO_3$ceramic varistor was obtained which has a breakdown voltage as low as 7 V.

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