• Resources Recycling
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• v.25 no.3
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• pp.49-54
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• 2016

In this study, zircon sand is separated into zirconia and silica by using the Ar-$H_2$ arc plasma refining. And then silica is removed from it by the microwave leaching method to produce a high pure zirconia. Plasma melting consist of two sequential processes; reduction process with Ar gas only followed by refining process with Ar-$H_2$ gas. After cooling in chamber. The solid phase obtained at $240^{\circ}C$ were found to be composed of 20% sulfuric acid solution. The solution was used as a leaching solution with microwave irradiation to obtain a high purity zirconia.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2163-2165
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• 2005

A pulsed laser ablation deposition (PLAD) technique has been used for producing fine particle as well as thin film at relatively low substrate temperatures. However, in order to manufacture and evaluate such materials in detail, motions of plume particles generated by laser ablation have to be understood and interactions between the particles by ablation and gas plasma have to be clarified. Therefore, this paper was focused on the understanding of plume motion in laser ablation assisted by Ar plasma at 50(mTorr). Two-dimensional hybrid model consisting of fluid and particle models was developed and three kinds of plume particles which are carbon atom (C), ion $(C^+)$ and electron were considered in the calculation of particle method It was obtained that ablated $C^+$ was electrically captured in Ar plasmas by strong electric field (E). The difference between motions of the ablated electrons and $C^+$ made E strong and the collisional processes active.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.445-448
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• 2011

In this study, the etching characteristics of $Al_2O_3$ thin films were investigated using an ICP (inductively coupled plasma) of $BCl_3$/Ar gas mixture. The etch rate of $Al_2O_3$ thin films as well as the $SiO_2/Al_2O_3$ etch selectivity were measured as functions of $BCl_3$/Ar mixing ratio (0~100% Ar) at a constant gas pressure (10 mTorr), total gas flow rate (40 sccm), input power (800 W) and bias power (100 W). The behavior of the $Al_2O_3$ etch rate was shown to be quite typical for ion-assisted etch processes with a dominant chemical etch pathway. To analyze the etching mechanism using DLP (double langmuir probe), OES (optical emission spectroscopy) and surface analysis using XPS (x-ray photoelectron spectroscopy) were carried out.

• Journal of the Semiconductor & Display Technology
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• v.12 no.3
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• pp.19-22
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• 2013

The purpose of this study is to develop a system that can monitor the amounts of energy consumption during CVD and etching process for semiconductor manufacturing. Specifically, this system is designed to measure the $CO_2$ emission amounts quantitatively by measuring the flow rate of gas used and amount of power consumed during the processes. The processes of CVD equipment can be classified generally into processing step and cleaning step and all the two steps were monitored. In CVD and etcher equipments, various gases including Ar and $O_2$ are used, but Ar, $O_2$ and He were monitored with the use of the LCI data of Korea Environmental Industry & Technology Institute and carbon emission coefficients of EcoInvent. As a result, it was found that the carbon emission amounts of CVD equipment for Ar, $O_2$ and He were $0.030kgCO_2/min$, $4.580{\times}10^{-3}kgCO_2/min$ and $6.817{\times}10^{-4}kgCO_2/min$, respectively and those of etcher equipment for Ar and $O_2$ are $5.111{\times}10^{-3}kgCO_2/min$ and $7.172kgCO_2/min$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.20-20
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• 1998

I Ion beam technology has recently attracted much interest because it has exciting t technological p아:ential for surface analysis, ion beam mixing, surface cleaning and etching i in thin film growth and semiconductor fabrication processes, etc. Es야~cially, ion beam s sputtering has been widely used for sputter depth profiling with x-photoelectron S spectroscopy (XPS) , Auger electron s$\pi$~troscopy(AES), and secondary-ion mass S야i따oscopy(SIMS). However, The problem of surface compositional ch없1ge due to ion b bombardment remains to be understo여 없ld solved. So far sputtering processes have been s studied by s따face an외ysis tools such as XPS, AES, and SIMS which use the sputtering p process again. It would be improbable to measure the modified surface composition profiles a accurately due to ion beam bombardment with surface analysis techniques based on sputter d depth profiling. However, recently Medium energy ion scattering spectroscopy(MEIS) has b been applied to study the sputtering of solid surface at ion bombardment and has been p proved that it has been extremely valuable in probing the surface composition 뻐d s structure nondestructively and quantita디vely with less than 1.0 nm depth resolution. To u understand the sputtering processes of solid surface at ion bombardment, The Molecular D Dynamics(MD) and Monte Carlo(MC) simulation has been used and give an intimate i insight into the sputtering processes of solid surfaces. In this presentation, the sputtering processes of alloys and compound samples at ion b bombardment will be reviewed and the MEIS results for the Ar+ sputter induced altered l layer of the TazOs thin film 뻐dd없nage profiling of Ar+ ion sputt얹"ed Si(100) surface will b be discussed with the results of MD and MC simulation.tion.

• International Journal of Oral Biology
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• v.38 no.3
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• pp.121-126
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• 2013

Tumor necrosis factor alpha ($TNF{\alpha}$) is a multifunctional inflammatory cytokine that regulates various cellular and biological processes. Increased levels of $TNF{\alpha}$ have been implicated in a number of human diseases including diabetes and arthritis. Sympathetic nervous system stimulation via the beta2-adrenergic receptor (${\beta}2AR$) in osteoblasts suppresses osteogenic activity. We previously reported that $TNF{\alpha}$ upregulates ${\beta}2AR$ expression in murine osteoblastic cells and that this modulation is associated with $TNF{\alpha}$ inhibition of osteoblast differentiation. In our present study, we explored whether $TNF{\alpha}$ induces ${\beta}2AR$ expression in human osteoblasts and then identified the downstream signaling pathway. Our results indicated that ${\beta}2AR$ expression was increased in Saos-2 and C2C12 cells by $TNF{\alpha}$ treatment, and that this increase was blocked by the inhibition of NF-${\kappa}B$ activation. Chromatin immunoprecipitation and luciferase reporter assay results indicated that NF-${\kappa}B$ directly binds to its cognate elements on the ${\beta}2AR$ promoter and thereby stimulates ${\beta}2AR$ expression. These findings suggest that the activation of $TNF{\alpha}$ signaling in osteoblastic cells leads to an upregulation of ${\beta}2AR$ and also that $TNF{\alpha}$ induces ${\beta}2AR$ expression in an NF-${\kappa}B$-dependent manner.

• Proceedings of the KOSOMBE Conference
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• v.1997 no.05
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• pp.184-187
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• 1997

In terms of a system identification, we present a method for autoregressive(AR) modelling of variious biomedical signal. Model order is estimated fly low rank approximation and coefficients are determined by innovation processes of Kalman filter derivation. An application of the method is given for visual evoked potentials.

• Bulletin of the Korean Chemical Society
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• v.28 no.10
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• pp.1751-1755
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• 2007

The interaction of ammonium hydroxide (NH4OH) with zircaloy-4 (Zry-4) was investigated using X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) methods. In order to study the surface chemistry of NH4OH/Zry-4 system, the binding energies of N1s, O1s and Zr3d electrons were monitored. The N1s peak intensity was remarkably increased by following cycles of Ar+ sputtering of NH4OH dosed Zry-4 surface at room temperature. Because the nitrogen stayed under the subsurface region was diffused out onto the Zry-4 surface after oxygen concentration was decreased. These could be occurred after the surface oxygen was diffused into the bulk or desorbed out from the surface until Ar+ fluence was 6.0 × 1016 Ar+/cm2 then the surface was relatively atomic deficient state. The O1s peak intensity was decreased by stepwise Ar+ sputtering. After many cycles of Ar+ sputtering, the peak intensities of Zr3d peaks did not change much but the shape of the peak clearly did change. This implies that the oxidation state of zirconium was changed during stepwise Ar+ sputtering of NH4OH/Zry-4. The Zr3d peak intensity of zirconium nitride (ZrNx) increased as the intensity of N1s (from zirconium nitride) increased but the Zr3d peak intensity of zirconium oxide (ZrOx) decreased due to the depopulation of the oxygen species on the surface region. We also observed that the peak intensity of Zr4+ was nearly same after Ar+ sputtering processes but the peak intensity of metallic zirconium increased compared to that of before the sputtering process was performed.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.4
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• pp.24-31
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• 2005

A plused laser ablation deposition(PLAD) technique has been used for producing fine particle as well as thin film at relatively low substrate temperatures. However, in order to manufacture and evaluate such materials in detail, motions of plume particles generated by laser ablation have to be understood and interactions between the particles by ablation and gas plasma have to be clarified. Therefore this paper was focused on the understanding of plume motion in laser ablation assisted by hi plasmas at 100[mTorr]. One-dimensional hybrid model consisting of fluid and particle models was developed and three kinds of plume particles which are carbon atom(C), $ion(C^+)$ and electron were considered in the calculation of particle method. It was obtained that ablated $C^+$ was electrically captured in Ar plasmas by strong electric field(E). The difference between motions of the ablated electrons and $C^+$ made E strong and the collisional processes active. The energies of plume particles were investigated on a substrate surface. In addition the plume motion in Ar gas was also calculated and discussed.

• Korean Journal of Metals and Materials
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• v.46 no.3
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• pp.125-130
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• 2008

Conventional plasma carburizing or nitriding for austenitic stainless steels results in a degradation of corrosion resistance. However, a low temperature plasma surface treatment can improve surface hardness without deteriorating the corrosion resistance. The 2-step low temperature plasma processes (the combined carburizing and post nitriding) offers the increase of both surface hardness and thickness of hardened layer and corrosion resistance than the individually processed low temperature nitriding and low temperature carburizing techniques. In the present paper, attempts have been made to investigate the influence of the introduction of Ar gas (0~20%) in nitriding atmosphere during low temperature plasma nitriding at $370^{\circ}C$ after low temperature plasma carburizing at $470^{\circ}C$. All treated specimens exhibited the increase of the surface hardness with increasing Ar level in the atmosphere and the surface hardness value reached up to 1050 HV0.1, greater than 750 $HV_{0.1}$ in the carburized state. The expanded austenite phase (${\gamma}_N$) was observed on the most of the treated surfaces. The thickness of the ${\gamma}_N$ layer reached about $7{\mu}m$ for the specimen treated in the nitriding atmosphere containing 20% Ar. In case of 10% Ar containing atmosphere, the corrosion resistance was significantly enhanced than untreated austenitic stainless steels, whilst 20% Ar level in the atmosphere caused to form CrN in the N-enriched layer (${\gamma}_N$), which led to the degradation of corrosion resistance compared with untreated austenitic stainless steels.