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http://dx.doi.org/10.4313/JKEM.2011.24.6.445

A Study of Al2O3 Thin Films Etching Characteristics Using Inductively Coupled BCl3/Ar Plasma  

Kim, Young-Keun (Department of Control and Instrumentation Engineering, Korea University)
Kwon, Kwang-Ho (Department of Control and Instrumentation Engineering, Korea University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.6, 2011 , pp. 445-448 More about this Journal
Abstract
In this study, the etching characteristics of $Al_2O_3$ thin films were investigated using an ICP (inductively coupled plasma) of $BCl_3$/Ar gas mixture. The etch rate of $Al_2O_3$ thin films as well as the $SiO_2/Al_2O_3$ etch selectivity were measured as functions of $BCl_3$/Ar mixing ratio (0~100% Ar) at a constant gas pressure (10 mTorr), total gas flow rate (40 sccm), input power (800 W) and bias power (100 W). The behavior of the $Al_2O_3$ etch rate was shown to be quite typical for ion-assisted etch processes with a dominant chemical etch pathway. To analyze the etching mechanism using DLP (double langmuir probe), OES (optical emission spectroscopy) and surface analysis using XPS (x-ray photoelectron spectroscopy) were carried out.
Keywords
Etch characteristic; OES; ICP; XPS; $Al_2O_3$;
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