• 한국재료학회지
• /
• 제18권1호
• /
• pp.32-37
• /
• 2008

The electrical, optical, structural and surface properties of an indium tin oxide (ITO) film grown on a flexible PET substrate using a specially designed roll-to-roll (R2R) sputtering system as a function of the DC power, $Ar/O_2$ flow ratio, and rolling speed is reported. It was observed that both the electrical and optical properties of the ITO film on the PET substrate were critically dependent on the $Ar/O_2$ flow ratio. In addition, x-ray diffraction examination results showed that the structure of the ITO film on the PET substrate was an amorphous structure regardless of the DC power and the $Ar/O_2$ flow ratio due to a low substrate temperature, which was maintained constant by a main cooling drum. Under optimized conditions, ITO film with resistivity of $6.44{\times}10^{-4}{\Omega}-cm$ and transparency of 86% were obtained, even when prepared at room temperature. Furthermore, bending test results exhibited that R2R-grown ITO film had good flexibility which would be applicable to flexible displays and solar cells.

• 한국광학회지
• /
• 제7권2호
• /
• pp.129-135
• /
• 1996

고립전자쌍을 갖는 비정질 As$_{2}$S$_{3}$ 단층박막에서 처음으로 흡수형 광쌍안정현상을 관측하였다. 광원으로는 렌즈로 집속된 Ar$^{+}$ laser beam (.lambda.=514.5nm)을 사용하였다. 본 실험에서는 공진기가 없는 단층의 박막시료에서 시료의 흡수계수의 온도의존성에 의해 광쌍안정현상이 발생함을 알 수 있었고 이 효과는 물질내에서 흡수단의 가역적인 편이에 의해 설명되었다. 실험에서 광쌍안정조건은 매질의 초기흡수계수와 시료의 두께의 곱에 의해 결정되고 시료의 두께가 0.8.nu.m일 때 이 값은 약 0.12임을 알 수 있었다. 또한 입사 레이저광세기가 150-180mW일 때 스위칭이 뚜렷했고 스위칭시간은 약 $10^{-4}$초였다.

• 한국전기전자재료학회논문지
• /
• 제21권12호
• /
• pp.1051-1056
• /
• 2008

In this study, the investigations of the TiN etching characteristics were carried out with addition of $Cl_2$ gas in an inductively coupled $BCl_3$-base plasma system. Dry etching of the TiN was studied by varying the etching parameters including $Cl_2$ gas addition ratio, RF power, DC-bias voltage and pressure. The etch rate of TiN thin film was maximum when the $Cl_2$ gas addition flow was 2 sccm with fixed other conditions. As the RF power DC-bias voltage were increased, the etch rate of TiN thin film showed increasing tendency. $BCl_3/Cl_2$/Ar plasmas were characterized by optical emission spectroscopy (OES) analysis. The chemical reaction on the surface of the etched TiN films was investigated with X-ray photoelectron spectroscopy (XPS).

• 한국광학회:학술대회논문집
• /
• 한국광학회 2008년도 하계학술발표회 논문집
• /
• pp.119-120
• /
• 2008

A HMD type multi-focus 3D display system is developed and proof about satisfaction of eye accommodation is tested. Four LEDs(Light Emitting Diode) and a DMD are used to generate four parallax images at single eye and any mechanical part is not included in this system. The multi-focus means the ability of monocular depth cue to various depth levels. By achieving multi-focus function, we developed a 3D display system for only one eye, which can satisfy the accommodation to displayed virtual objects within defined depth. We could achieve a result that focus adjustment is possible at 5 step depths in sequence within 2m depth for only one eye. Additionally, the change level of burring depending on the focusing depth is tested by captured photos and moving pictures of video camera and several subjects. And the HMD type multi-focus 3D display can be applied to a monocular 3D display and monocular AR 3D display.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
• /
• pp.420-423
• /
• 2003

[ $TiO_2$ ] thin films were fabricated by DC magnetron sputtering system at by controlling deposition times, ratios of $Ar:O_2$ partial presser ratio and substrate conditions. And the surface, cross-section morphology, microstructure, and composition ratio of the films were analyzed by FE-SEM, TEM and XPS. Besides, the optical absorption and transmittance of the $TiO_2$ films were measured by a UV-VIS-NIR Spectrophotometer, and photocatalytic properties were studied by G C Analyzer & Data Analysis system. As the result, when $TiO_2$ thin film was made at deposition time of 120[min] and $Ar:O_2$ ratio of 60:40, the best structural and optical properties among many thin films could be accepted. The best results of properties were as follows: thickness; $360{\sim}370[nm]$, grain size; 40[m], gap between two peak binding energy, $5.8{\pm}0.05[eV]$ ($2p_{3/2}$ peak and $2p_{1/2}$ peak of Ti was show at $458.3{\pm}0.05[eV]$ and $464.1{\pm}0.05[eV]$ respectively), binding energy; $530{\pm}0.05\;[eV]$, opticalenergy band gap; 3.4[eV].

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
• /
• pp.154-157
• /
• 2003

$TiO_2$ thin films were fabricated by RF magnetron sputtering system at by controlling deposition times, ratios of $Ar:O_2$ partial presser ratio and substrate conditions. And the surface, cross-section morphology, microstructure, and composition ratio of the films were analyzed by FE-SEM, TEM and XPS. Besides, the optical absorption and transmittance of the $TiO_2$ films were measured by a UV-VIS-NIR Spectrophotometer, and photocatalytic properties were studied by G${\cdot}$C Analyzer & Data Analysis system. As the result, when $TiO_2$ thin film was made at deposition time of 120[min] and $Ar:O_2$ ratio of 60:40, the best structural and optical properties among many thin films could be accepted. The best results of properties were as follows: thickness; 360~370[nm), grain size; 40[nm], gap between two peak binding energy; $5.8{\pm}0.05[eV]$ ($2_{p3/2}$ peak and $2_{p1/2}$ peak of Ti was show at $458.3{\pm}0.05[eV]$ and $464.1{\pm}0.05[eV]$ respectively), binding energy; $530{\pm}0.05[eV]$, optical energy band gap; 3.4[eV].

• 한국진공학회지
• /
• 제21권4호
• /
• pp.212-218
• /
• 2012

RF 마그네트론 스퍼터에 의해 만들어진 AZO 박막을 기판의 화학적 특성에 따른 광학적 특성에 대하여 조사하였다. 기판은ICP-CVD방법으로 제작된 SiOC 박막으로 화학적 특성의 변화를 관찰하기 위해서 산소와 아르곤(DMDMOS)가스의 유량비를 다르게 하여 증착하였다. 아르곤의 유량이 증가할수록 Si-O 결합이 증가하였으며, 비정질구조가 증가되었다. 비정질도가 높은 SiOC 박막 위에 성장된 AZO 박막의 거칠기는 감소하였으며, 표면의 평탄도가 개선되었다. 더불어 비정질도가 높은 SiOC박막 위에 성장된 AZO 박막에서 자외선 영역의 방사 강도가 제일 높았다.

• 한국표면공학회지
• /
• 제54권6호
• /
• pp.348-356
• /
• 2021

In this study, optical diagnosis of plasma was performed for nitrogen doping in graphene using a horizontal inductively coupled plasma (ICP) system. Graphene was prepared by mechanical exfoliation and the ICP system using nitrogen gas was ignited for plasma-induced and defect-suppressed nitrogen doping. In order to derive the optimum condition for the doping, plasma power, working pressure, and treatment time were changed. Optical emission spectroscopy (OES) was used as plasma diagnosis method. The Boltzmann plot method was adopted to estimate the electron excitation temperature using obtained OES spectra. Ar ion peaks were interpreted as a reference peak. As a result, the change in the concentration of nitrogen active species and electron excitation temperature depending on process parameters were confirmed. Doping characteristics of graphene were quantitatively evaluated by comparison of intensity ratio of graphite (G)-band to 2-D band, peak position, and shape of G-band in Raman profiles. X-ray photoelectron spectroscopy also revealed the nitrogen doping in graphene.

• 방송공학회논문지
• /
• 제21권1호
• /
• pp.43-50
• /
• 2016

이 논문에서는 스마트폰을 사용한 비디오 투과식 증강현실에서 왜곡 보정과 시야각 조정을 다룬다. 삼성 기어 VR이나 구글의 카드보드와 같은 스마트폰을 사용한 HMD(Head Mounted Display)에서는 일반적으로 렌즈로 인해서 영상이 왜곡되어 렌더링이 된다. 특히나 스마트폰을 사용한 증강현실에서는 스마트폰의 카메라와 HMD의 렌즈로 인해서 발생하는 왜곡이 합해져서 보다 복잡한 형태의 왜곡이 발생하게 된다. 이러한 왜곡은 사용자에게 시각적인 인지나 인식 기능에 부조화를 야기하게 된다. 유리와 같은 투명 디스플레이를 궁극적인 형태의 HMD라고 생각하면 최대한 이런 왜곡을 없애서 투명한 것과 같은 효과를 주어야 한다. 이 논문에서는 스마트폰 기반 비디오 투과식 증강현실 방식에서 왜곡을 보정하고 시야각을 조정하여 투명에 가까운 효과를 주는 방법을 제시한다. 논문에서 왜곡 보정 및 시야각 조정 모듈을 개발하고 이에 대한 성능을 측정하였다.

• 한국표면공학회지
• /
• 제41권3호
• /
• pp.83-87
• /
• 2008

This study described the effects of RF power, DC bias voltage, chamber pressure and gas mixing ratio on the etch rates of TiN thin film and selectivity of TiN thin film to $SiO_2$ with $BCl_3$/Ar gas mixture. When the gas mixing ratio was $BCl_3$(20%)/Ar(80%) with other conditions were fixed, the maximum etch rate of TiN thin film was 170.6 nm/min. When the DC bias voltage increased from -50 V to -200 V, the etch rate of TiN thin film increased from 15 nm/min to 452 nm/min. As the RF power increased and chamber pressure decreased, the etch rate of TiN thin film showed an increasing tendency. When the gas mixing ratio was $BCl_3$(20%)/Ar(80%) under others conditions were fixed, the intensity of optical emission spectra from radical or ion such as Ar(750.4 nm), $Cl^+$(481.9 nm) and $Cl^{2+}$(460.8 nm) was highest. The TiN thin film was effectively removed by the chemically assisted physical etching in $BCl_3$/Ar ICP plasma.