• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1277-1280
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• 2007

Isothermal activation annealing was carried out using boron doped SLS poly-using an RTA system. We observed different behavior of reverse annealing depending on the implantation conditions.

• 전자공학회지
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• 제22권3호
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• pp.92-105
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• 1995

각 분야에서 고화질 고해상도의 Flat Panel Display(FPD)에 대한 요구가 급증하고 있으며, FPD 소자들도 다양하다. FPD를 위한 구동방식은 근본적으로 matrix addroessing 방식을 사용하지만 FPD 소자의 동작 원리, 특성, 구동상의 문제점 등에 따라서 구동방식도 매우 다양하다. 다양한 FPD 소자들이 구동 방식과 구동회로를 다 살펴볼 수 없으므로 본고에서는 FPD소자인 PDP, EL, LED, EC, LCD, DMD, AMA, GLV, FED 등의 동작 원리를 설명하고, 이 소자들 중에서 AMLCD와 dc-PDP 소자의 구동방식과 구동회로에 대하여 논의한다. AMLCD의 구동방식으로는 펄스 구동 방식과 용량 구동 방식을 살펴보고, AMLCD의 문제점들을 극복할 수 있는 방법들을 설명한다. dc-PDP의 구동 방법인 pulse-memory 구동방식과 새로운 pulse-memory 구동 방식을 살펴보았다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.395-398
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• 2004

We developed an a-Si TFT-LCD panel with integrated gate driver circuit using a standard 5-MASK process. To minimize the effect of the a-Si TFT current and LC's capacitance variation with temperature, we developed a new a-Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3-side free panel structure in a-Si TFT-LCD of QVGA(240$^{\ast}$320) resolution. And using double ASG structure the dead space of TFT-LCD panel could be further decreased.

• Journal of Information Display
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• 제5권2호
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• pp.1-5
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• 2004

We developed an a-Si TFT-LCD panel with integrated gate driver circuit using a standard 5-MASK process. To minimize the effect of the a-Si TFT current and LC's capacitance variation with temperature, we developed a new a-Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3-side free panel structure in a-Si TFT-LCD of QVGA ($240{\times}320$) resolution. And using double ASG structure the dead space of TFT-LCD panel could be further decreased.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.535-538
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• 2003

Liquid crystal molecules with a new fluoro-isothiocyanate moiety were synthesized. They showed remarkably high $T_{NI}$ (>190 $^{\circ}C$), wide mesophase range of 170 $^{\circ}C$, high dielectric anisotropy (>14) and high optical anisotropy (>0.28). New LC Mixtures of the high $T_{NI}$ (>$85^{\circ}C$) was blended with the novel fluoro-isothiocyanate containing LC molecules, phenylcyclohexanes, bicyclohexanes and ester compounds. The LC mixtures show a fast speed (<10ms) of the below one frame rate in 17" WXGA panel.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.383-388
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• 2004

In this paper an alternative Active Matrix LCD technology is described with scalable, low cost processing. The Dual Select Diode AMLCD requires 60% lower capital investment in the array process than a-Si TFT arrays and results in 20% lower cost LCD modules. Development at several AMLCD manufacturers is in progress.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.873-877
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• 2005

Recent developments in Dual Select Diode (DSD) AMLCD technology are described. They include a novel array design and drive method with shared select lines, which leads to higher aperture ratio and a further reduction of module cost. A Color-On-Array DSD process and pixel layout compatible with In-Plane-Switching is also proposed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1071-1074
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• 2007

6Mask CMOS process in low temperature polycrystalline silicon thin film transistors (poly-Si TFTs) has been developed and verified by manufacturing a 6Mask CMOS AMLCD panel. The novel 6Mask CMOS process is realized by eliminating the storage mask, gate mask and via open mask of conventional structure.

• Journal of Information Display
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• 제11권4호
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• pp.160-164
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• 2010

Organic light-emitting devices (OLEDs) have shown superior characteristics and are expected to dominate the nextgeneration flat-panel displays. Active-matrix organic light-emitting diode (AMOLED) displays, however, have stringent demands on the performance of the backplane. In this paper, the development of thin-film transistors (TFTs) based on indium gallium zinc oxide (IGZO) on both Gen 1 and 6 glasses, and their decent characteristics, which meet the AMOLED requirements, are shown. Further, several display prototypes (e.g., 2.4" AMOLED, 2.4" transparent AMOLED, and 32" AMLCD) using IGZO TFTs are demonstrated to confirm that they can indeed be strong candidates for the next-generation TFT technology not only of AMOLED but also of AMLCD (active-matrix liquid crystal display).

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.302-305
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• 2008

We present a new touch screen method, which utilizes the variation of liquid crystal capacitance according to the touch event on the screen. It is integrated in the AMLCD with the conventional LTPS process. Its resolution is same as the display resolution as well as performs the multi-touch sensing function basically. The design concept and the operation are verified with the SPICE simulation.