• Korean Journal of Metals and Materials
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• v.48 no.12
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• pp.1109-1115
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• 2010

ZnO thin films were deposited on Si(100) substrates at low temperatures ($44^{\circ}C{\sim}210^{\circ}C$) by atomic layer deposition using DEZn (diethyl zinc) and water as precursors. The film thickness was measured by ellipsometry calibrated with cross-sectional TEM. The phase formation, microstructure evolution, UV-absorbance, and chemical composition changes were examined by XRD, SEM, AFM, TEM, UV-VIS-NIR, and AES, respectively. A uniform amorphous ZnO layer was formed even at $44^{\circ}C$ while stable crystallized ZnO films were deposited above $90^{\circ}C$. All the samples showed uniform surface roughness below 3 nm. Fully crystallized ZnO layers with a band-gap of 3.37 eV without carbon impurities can be formed at substrate temperatures of less than $90^{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.52 no.4
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• pp.227-232
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• 2019

Mo-N based coatings have been studied for enhancing mechanical characteristics of thin films. In the case of Mo-X-N coatings, the microstructure and mechanical properties can be affected by the addition of the third element. In this work, Mo-Cu-N coatings were successfully fabricated with varying the Cu content from 4.5 at% to 31 at% by the co-sputtering method. Thus, properties of the coatings were analyzed by EDS, SEM, XRD, AFM, nano indentation and scratch test techniques. From observed results, MoxN bonds were made in a nitrogen atmosphere and Cu elements were present at grain boundaries. In addition, coatings with the Cu content above 14 at% had a Cu3N peak in the XRD results. Thus, it is suggested that the formation of Cu3N phase affected the microstructure and mechanical properties of Mo-Cu-N coatings. Mechanical properties of Mo-Cu-N coatings were found to be relatively better at Cu content of about 12 at%.

• Current Applied Physics
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• v.18 no.11
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• pp.1294-1299
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• 2018

In this paper, we demonstrate the feasibility of constructing DNA nanostructures (i.e. DNA rings and double-crossover (DX) DNA lattices) with appropriate doxorubicin hydrochloride (DOX) concentration and reveal significant characteristics for specific applications, especially in the fields of biophysics, biochemistry and medicine. DOX-intercalated DNA rings and DX DNA lattices are fabricated on a given substrate using the substrateassisted growth method. For both DNA rings and DX DNA lattices, phase transitions from crystalline to amorphous, observed using atomic force microscopy (AFM) occurred above a certain concentration of DOX (at a critical concentration of DOX, $30{\mu}M$ of $[DOX]_C$) at a fixed DNA concentration. Additionally, the coverage percentage of DNA nanostructures on a given substrate is discussed in order to understand the crystal growth mechanism during the course of annealing. Lastly, we address the significance of optical absorption and photoluminescence characteristics for determining the appropriate DOX binding to DNA molecules and the energy transfer between DOX and DNA, respectively. Both measurements provide evidence of DOX doping and $[DOX]_C$ in DNA nanostructures.

• Journal of Energy Engineering
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• v.25 no.4
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• pp.176-183
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• 2016

This study relates to a polymer electrolyte membrane for improved performance fuel cell, were researched with respect to properties required for driving a fuel cell. The bis(4-fluorophenyl)phenyl phosphine oxide was sulfonated using fuming sulfuric acid. Synthetic hydrophilic oligomer and the hydrophobic oligomer and the block copolymers were prepared via aromatic nucleophilic substitution polycondensation. A block copolymer structure and degree of sulfonation was analyzed by $^1H$-NMR and gel permeation chromatography(GPC) analysis. Thermal stability was confirmed by thermogravimetric analysis(TGA), block copolymer was stable at high temperature(>$200^{\circ}C$), The ion conductivity was measured in order to demonstrate the performance of fuel cell. Synthesis membrane was the increase of temperature was improved conductivity up to 58 mS/cm due to the influence of the developed ion clusters. The phase separation of the polymer was observed to make AFM analysis.

• Polymer(Korea)
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• v.30 no.6
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• pp.464-470
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• 2006

Diblock copolymers consisting of methoxy Poly (ethylene glycol) (MPEG) and poly (${\epsilon}-ca$ prolactone) (PCL), poly(${\delta}-valerolactone$) (PVL), poly(L-lactide) (PLLA), or poly(L-lactide-co-glycolide) (PLGA) were prepared to compare the characterization of diblock copolymers as a drug carrier. MPEG-PCL, MPEG-PVL, MPEG-PLLA, and MPEG-PLGA diblock copolymers were synthesized by the ring-opening polymerization of ${\epsilon}$-caprolactone or ${\delta}$-valerolactone in the presence of $HCl{\cdot}Et_2O$ as a monomer activator at room temperature and by the ring-opening polymerization of L-lactide or a mixture of L-lactide and glycolide in the presence of stannous octoate at $130^{\circ}C$, respectively. The synthesized diblock copolymers were characterized with $^1H-NMR$, GPC, DSC, and XRD. The micellar characterization of MPEG-polyester diblock copolymers in an aqueous phase was carried out by using NMR, dynamic light scattering, AFM, and fluorescence techniques. Most micelles exhibited a spherical shape in AFM. Thus, ore confirmed that the micelles formed with MPEG-polyester diblock copolymers have possibility as a potential hydrophobic drug delivery vehicle because a hydrophobic drug could be preferentially distributed in the micelle core.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.165-165
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• 2010

$1.55\;{\mu}m$ 대역의 레이저 다이오드를 제작하기 위해, InP(001) 기판에 InAlGaAs 물질을 장벽층으로 하는 InAs 양자점 구조를 분자선증착기 (MBE)를 이용하여 성장하고 구조 및 광학적 특성을 Double Crystal X-ray Diffraction (DCXRD), Atomic Force Microscopy (AFM), Photoluminescence (PL)을 이용하여 평가하였다. 일반적으로 InAlGaAs 물질은 고유한 상분리 현상 (Phase Separation)이 나타나는 특성이 있으며, 이는 양자점 성장에 중요한 요인으로 작용할 수 있다. 이러한 InAlGaAs 물질의 상분리 현상을 기판온도 ($540^{\circ}C$, $555^{\circ}C$, $570^{\circ}C$)를 비롯한 성장변수를 변화시켜 제어하고 InAs 양자점 형성에 어떠한 영향을 미치는지를 분석하였다. 540의 성장온도에서 InP(001) 기판에 격자정합한 InAlGaAs 장벽층이 성장온도를 $570^{\circ}C$로 증가시킬 경우 기판에 대하여 인장 응력 (Tensile Strain)을 받는 구조로 변화되었다. 인장응력을 받는 InAlGaAs 장벽층을 Ga Flux 양을 조절하여 격자정합한 InAlGaAs 층을 형성할 수 있었다. AFM을 통한 표면 형상 분석 결과, 서로 다른 기판온도에서 성장한 InAlGaAs 물질이 InP(001) 기판에 격자정합 조건일지라도 표면의 거칠기 (Surface Roughness)는 매우 다른 양상을 보였고 InAs 양자점 형성에 직접적으로 영향을 주었다. $570^{\circ}C$에서 성장한 InAlGaAs 위에 형성한 InAs 양자점의 가로방향 크기를 세로방향 크기로 나눈 비율이 1.03으로서, 555와 $540^{\circ}C$의 1.375 와 1.636와 비교할 때 모양 대칭성이 현저히 개선된 것을 알 수 있다. 상분리 현상이 줄어 표면 거칠기가 좋은 InAlGaAs 위에 양자점을 형성할 때 원자들의 이동도가 상대적으로 높아 InAs 양자점의 크기가 증가하고, 밀도가 감소하는 현상이 나타났다. 또한 InAlGaAs 장벽층이 InP(001) 기판을 기준으로 응력 (Compressive 또는 Tensile)이 존재하는 경우, InAs 양자점 모양이 격자정합 조건 보다 비대칭적으로 변하는 특성을 보여 주었다. 이로부터, 대칭성이 개선된 InAs 양자점 형성에 InAlGaAs 장벽층의 표면 거칠기와 응력이 중요한 변수로 작용함을 확인 할 수 있었다. PL 측정 결과, 발광파장은 $1.61\;{\mu}m$로 InAs 양자구조 형상에 따라 광강도 (Intensity), 반치폭 (Line-width broadening) 등이 변화 되었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.2
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• pp.73-77
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• 2021

Ga-doped ZnO thin films by RF magnetron sputtering process were synthesized according to the deposition conditions of O2 and Ar atmosphere gases, and rapid heat treatment (RTA) was performed at 600℃ in an N2 atmosphere. The thickness of the deposited ZnO : Ga thin film was measured, the crystal phase was investigated by XRD pattern analysis, and the microstructure of the thin film was observed by FE-SEM and AFM images. The intensity of the (002) plane of the X-ray diffraction pattern showed a significant difference depending on the deposition conditions of the thin films formed by O2 and Ar atmosphere gas types. In the case of a single thin f ilm doped with Ga under O2 conditions, a strong diffraction peak was observed. Under O2 and Ar conditions, in the case of a multilayer thin film with Ga doping, only a peak on the (002) plane with a somewhat weak intensity was shown. In the FE-SEM image, it was observed that the grain size of the surface of the thin film slightly increased as the thickness increased. In the case of a multilayer thin film with Ga doping under O2 and Ar atmosphere conditions, the specific resistance was 6.4 × 10-4 Ω·cm. In the case of a single thin film with Ga doping under O2 atmosphere conditions, the resistance of the thin film decreased. The resistance decreased as the thickness of the Ga-doped ZnO thin film increased to 2 ㎛, showing relatively a low specific resistance of 1.0 × 10-3 Ω·cm.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.1
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• pp.1-7
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• 2024

β-Ga₂O₃ is a material with a wide band gap of ~4.8 eV and a high breakdown-voltage of 8 MV/cm, and is attracting much attention in the field of power device applications. In addition, compared to representative WBG semiconductor materials such as SiC, GaN and Diamond, it has the advantage of enabling single crystal growth with high growth rate and low manufacturing cost [1-4]. In this study, we succeeded in growing a 10 mm thick β-Ga₂O₃ single crystal doped with 0.3 mol% SnO₂ through the EFG (Edge-defined Film-fed Growth) method using multi-slit structure. The growth direction and growth plane were set to [010]/(010), respectively, and the growth speed was about 12 mm/h. The grown β-Ga₂O₃ single crystal was cut into various crystal planes (010, 001, 100, ${\bar{2}}01$) and surface processed. The processed samples were compared for characteristics according to crystal plane through analysis such as XRD, UV/VIS/NIR/Spec., Mercury Probe, AFM and Etching. This research is expected to contribute to the development of power semiconductor technology in high-voltage and high-temperature applications, and selecting a substrate with better characteristics will play an important role in improving device performance and reliability.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.599-604
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• 1998

We have investigated Pt and $RuO_2$ as a bottom electrode for ferroelectric capacitor applications. The bottom electrodes were prepared by using an RF magnetron sputtering method. Some of the investigated parameters were a substrate temperature, gas flow rate, RF power for the film growth, and post annealing effect. The substrate temperature strongly influenced the surface morphology and resistivity of the bottom electrodes as well as the film crystallographic structure. XRD results on Pt films showed a mixed phase of (111) and (200) peak for the substrate temperature ranged from RT to $200^{\circ}C$, and a preferred (111) orientation for $300^{\circ}C$. From the XRD and AFM results, we recommend the substrate temperature of $300^{\circ}C$ and RF power 80W for the Pt bottom electrode growth. With the variation of an oxygen partial pressure from 0 to 50%, we learned that only Ru metal was grown with 0~5% of $O_2$ gas, mixed phase of Ru and $RuO_2$ for $O_ 2$ partial pressure between 10~40%, and a pure $RuO_2$ phase with $O_2$ partial pressure of 50%. This result indicates that a double layer of $RuO_2/Ru$ can be grown in a process with the modulation of gas flow rate. Double layer structure is expected to reduce the fatigue problem while keeping a low electrical resistivity. As post anneal temperature was increased from RT to $700^{\circ}C$, the resistivity of Pt and $RuO_2$ was decreased linearly. This paper presents the optimized process conditions of the bottom electrodes for memory device applications.

• Korean Journal of Optics and Photonics
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• v.18 no.5
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• pp.351-361
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• 2007

The samples composed of a GST thin film and the protective layers of $ZnS-SiO_2$ or $Al_2O_3$ coated on c-Si substrate were prepared by using the magnetron sputtering method. Samples of three different structures were prepared, that is, i) the GST single film on c-Si substrate, ii) the GST film sandwiched by the protective $ZnS-SiO_2$ layers on c-Si substrate, and iii) the GST film sandwiched by $Al_2O_3$ protective layers on c-Si substrate. The ellipsometric constants in the temperature range from room temperature to $700^{\circ}C$ were obtained by using the in-situ ellipsometer equipped with a conventional heating chamber. The measured ellipsometric constants show strong variations versus temperature. The variation of ellipsometric constants at the temperature region higher than $300^{\circ}C$ shows different behaviors as the ambient medium is changed from in air to in vacuum or the protective layers are changed from $ZnS-SiO_2$ to $Al_2O_3$. Since the long heating time of 1-2 hours is believed to be the origin of the high temperature variation of ellipsometric constants upon the heating environment and the protective layers, a PRAM (Phase-Change Random Access Memory) recorder is introduced to reduce the heating time drastically. By using the PRAM recorder, the GST samples are heated up to $700^{\circ}C$ decomposed preventing its partial evaporation or chemical reactions with adjacent protective layers. The surface image obtained by SEM and the surface micro-roughness verified by AFM also confirmed that samples prepared by the PRAM recorder have smoother surface than the samples prepared by using the conventional heater.