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http://dx.doi.org/10.6111/JKCGCT.2021.31.2.073

Characterization of Ga-doped ZnO thin films prepared by RF magnetron sputtering method  

Yun, Young-Hoon (Dept. of New & Renewable Energy, College of Energy convergence, Dongshin University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.31, no.2, 2021 , pp. 73-77 More about this Journal
Abstract
Ga-doped ZnO thin films by RF magnetron sputtering process were synthesized according to the deposition conditions of O2 and Ar atmosphere gases, and rapid heat treatment (RTA) was performed at 600℃ in an N2 atmosphere. The thickness of the deposited ZnO : Ga thin film was measured, the crystal phase was investigated by XRD pattern analysis, and the microstructure of the thin film was observed by FE-SEM and AFM images. The intensity of the (002) plane of the X-ray diffraction pattern showed a significant difference depending on the deposition conditions of the thin films formed by O2 and Ar atmosphere gas types. In the case of a single thin f ilm doped with Ga under O2 conditions, a strong diffraction peak was observed. Under O2 and Ar conditions, in the case of a multilayer thin film with Ga doping, only a peak on the (002) plane with a somewhat weak intensity was shown. In the FE-SEM image, it was observed that the grain size of the surface of the thin film slightly increased as the thickness increased. In the case of a multilayer thin film with Ga doping under O2 and Ar atmosphere conditions, the specific resistance was 6.4 × 10-4 Ω·cm. In the case of a single thin film with Ga doping under O2 atmosphere conditions, the resistance of the thin film decreased. The resistance decreased as the thickness of the Ga-doped ZnO thin film increased to 2 ㎛, showing relatively a low specific resistance of 1.0 × 10-3 Ω·cm.
Keywords
Ga-doped ZnO thin film; RF magnetron sputtering; Electrical resistance; Atmosphere gases;
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Times Cited By KSCI : 1  (Citation Analysis)
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1 J.G. Kim and K.C. Park, "Study on the properties of ZnO : Ga thin films with substrate temperatures", J. Korean Inst. Electr. Electron. Mater. Eng. 30 (2017) 794.   DOI
2 W.J. Cho, S.J. Kang and Y.S. Yoon, "Effects of the substrate temperature and the thin film thickness on the properties of the Ga-doped ZnO thin film", J. Inst. Electron. Eng. Korea 47 (2010) 6.
3 P. Marwoto, F.S. Sugianto and D. Aryanto, "Effects of argon pressure on the properties of ZnO : Ga thin films deposited by DC magnetron sputtering", AIP Conference Proceedings 030016 (2016) 1719.
4 H.M. Kim, D.Y. Ma and K.C. Park, "Effects of doping concentration on the properties of Ga-doped ZnO thin films prepared by RF magnetron sputtering", J. Korean Inst. Electr. Electron. Mater. Eng. 25 (2012) 984.   DOI
5 S.J. Jeong, D.K. Kim and H.B. Kim, "Electrical and optical properties of Ga-doped ZnO thin films deposited at different process pressures by RF magnetron sputtering", J. Korean Vac. Soc. 21 (2012) 17.   DOI
6 T. Minami, T. Miyata and T. Yamamoto. "Stability of transparent conducting oxide films for use at high temperatures", J. Vac. Sci. Technol., A 17 (1999) 1822.   DOI
7 H.J. Ko, Y.F. Chen, S.K. Hong, H. Wenisch, T. Yao and D.C. Look, Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy", Appl. Phys. Lett. 77 (2000) 3761.   DOI
8 R. Cebulla, R. Wendt and K. Ellmer, "Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma: Relationships between plasma parameters and structural and electrical film properties", J. Appl. Phys. 83 (1998) 1087.   DOI
9 K. Tominaga, H. Manabe, N. Umezu, I. Mori, T. Ushiro and I. Nakabayashi, "Amorphous transparent conductive oxide films of In2O3-ZnO with additional Al2O3 impurities", J. Vac. Sci. Technol. 15 (1997) 1074.
10 K.U. Sim, S.W. Shin, A.V. Moholkar, J.H. Yun, J.H. Moon and J.H. Kim, "Effects of dopant (Al, Ga, and In) on the characteristics of ZnO thin films prepared by RF magnetron sputtering system", Curr. Appl. Phys. 10 (2010) S463.   DOI
11 J. Hu and R.G. Gordon. "Atmospheric pressure chemical vapor deposition of gallium doped zinc oxide thin films from diethyl zinc, water, and triethyl gallium", J. Appl. Phys. 72 (1992) 5381.   DOI
12 J.H. Heo, Y.L. Lee and K.M. Lee, "Electrical and structural characteristics of AZO thin films deposited by reactive sputtering", J. Semi. & Disp. Equip. Tech. 8 (2009) 33.
13 K.Y. Cheong, N. Muti and S.R. Ramanan, "Electrical and optical studies of ZnO : Ga thin films fabricated via the sol-gel technique", Thin Solid Films 410 (2002) 142.   DOI
14 K.T. Ramakrishna Reddy, H. Gopalaswamy, P.J. Reddy and R.W. Miles. "Effect of gallium incorporation on the physical properties of ZnO films grown by spray pyrolysis", J. Crystal Growth 210 (2000) 516.   DOI
15 E. Fortunato, V. Assuncao, A. Goncalves, A. Marques, H. Aguas, L. Pereira, I. Ferreira, P. Vilarinho and R. Martins, "High quality conductive gallium-doped zinc oxide films deposited at room temperature", Thin Solid Films 451-452 (2004) 443.   DOI
16 G.A. Hirata, J. McKittrick, T. Cheeks, J.M. Siqueiros, J.A. Diaz, O. Contreras and O.A. Lopez, "Synthesis and optelectronic characterization of gallium doped zinc oxide transparent electrodes", Thin Solid Films 288 (1996) 29.   DOI
17 J.H. Lee, D.J. Lee, D.G. Lim and K.J. Yang, "Structural, electrical and optical properties of ZnO : Al films deposited on flexible organic substrates for solar cell applications", Thin Solid Films 515 (2007) 6094.   DOI
18 K.H. Yoon, J.W. Choi and D.H. Lee, "Characteristics of ZnO thin films deposited onto Al/Si substrates by r.f. magnetron sputtering", Thin Solid Films 302 (1997) 116.   DOI