• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.218-223
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• 1999

We investigated the interfacial reactions between the $Y_2O_3$ film deposited by ICB processing and p-type (100) Si substrates upon annealing treatments in $O_2$ and Ar gas ambients. we also investigated the evolution of surface morphology of ICB deposited $Y_2O_3$ films upon annealing treatments. We observed that the root-mean-square(RMS) value of surface roughness measured by AFM increased with annealing time at $800^{\circ}C$ in $O_2$ ambient, while the change of surface roughness was not observed in Ar ambient. We also found the growth of $SiO_2$ layer and the formation of yttium silicate layer. From the capacitance values $(C_{acc})$ measured by C-V measurements, the relative didldctric constant of $Y_2O_3$ film in metal-insulator-semiconductor(MIS) structure was estimated to be about 9.

• Tribology and Lubricants
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• v.16 no.5
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• pp.389-394
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• 2000

Scanning Probe Microscope (SPM) such as Scanning Tunneling Microscope (STM) and Atomic Force Microscope (AEM) was shown to be the powerful tool for nano-scale characterization of material surfaces. Using this technique, surface morphology of the cyclically deformed Cu or Cu-Al single crystal was observed. The surface became proportionately rough as the number of cycles increased, but after some number of cycles no further change was observed. Slip steps with the heights of 100 to 200 nm and the widths of 1000 to 2000 nm were prevailing at the stage. The slipped distance of one slip system at the surface was not uniform, and formation of the extrusions or intrusions was assumed to occur such place. By comparing the morphological change caused by crystallographic orientation, strain amplitude, number of cycles or stacking fault energy, some interesting results which help to clarify the basic mechanism of fatigue damage were obtained. Furthermore, applicability of the scanning tunneling microscopy to fatigue damage is discussed.

• Bulletin of the Korean Chemical Society
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• v.23 no.2
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• pp.225-228
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• 2002

Amorphous $Ga_2O_3$ films have been grown on Si(100) substrates by metal organic chemical vapor deposition (MOCVD) using gallium isopropoxide, $Ga(O^iPr)_3$, as single precursor. Deposition was carried out in the substrate temperature range 400-800 $^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis revealed deposition of stoichiometric $Ga_2O_3$ thin films at 500-600 $^{\circ}C$. XPS depth profiling by $Ar^+$ ion sputtering indicated that carbon contamination exists mostly in the surface region with less than 3.5% content in the film. Microscopic images of the films by scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed formation of grains of approximately 20-40 nm in size on the film surfaces. The root-mean-square surface roughness from an AFM image was ${\sim}10{\AA}$. The interfacial layer of the $Ga_2O_3$/Si was measured to be ${\sim}35{\AA}$ thick by cross-sectional transmission electron microscopy (TEM). From the analysis of gaseous products of the CVD reaction by gas chromatography-mass spectrometry (GC-MS), an effort was made to explain the CVD mechanism.

• Journal of Magnetics
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• v.15 no.3
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• pp.103-107
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• 2010

We investigated spin-polarized current switching of Pac-man type II (PM-II) nanoelements in Pac-man shaped nanoscale spin-valves (Co/Cu/Py) using micromagnetic simulations. The effects of slot angle and antiferromagnetic (AFM) layer were simulated to obtain optimum switching in less than 2 ns. At a critical slot angle of $105^{\circ}$, the lowest current density for anti-parallel to parallel (AP-P) switching was observed due to no vortex or antivortex formation during the magnetic reversal process. All other slot angles for AP-P formed a vortex or antivortex during the magnetization reversal process. Additionally, a vortex or anti-vortex formed for all slot angles for parallel to anti-parallel (P-AP) switching. The addition of an AFM layer caused the current density to decrease significantly for AP-P and P-AP at slot angles less than $90^{\circ}$. However, at slot angles greater than $90^{\circ}$, the current density tended to decrease by less amounts or actually increased slightly as shape anisotropy became more dominant. This allowed ultra-fast switching with 5.05 and $5.65{\times}10^8\;A/cm^2$ current densities for AP-P and P-AP, respectively, at a slot angle of $105^{\circ}$.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.361-367
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• 1998

$\alpha$-Sexithiophene ($\alpha$-6T) thin films were deposited by organic molecular beam deposition (OMBD) technique. The $\alpha$-6T was synthesized and purified by the sublimation method. The thin films of the $\alpha$-6T were deposited under various deposition conditions. The effects of deposition rate, substrate temperature, and vacuum pressure on the formation of these films have been studied. The molecular orientation, crystallinity, and surface morphology of $\alpha$-6T films were investigated with angle-resolved UV/visible absorption spectroscopy, X-ray diffractometry (XRD), and atomic force microscopy (AFM). It was found that the crystalline structure of $\alpha$-6T films was monoclinic and independent uppon substrate temperature, deposition rate, and deposition pressure. On the other hand, the $\alpha$-6T molecules in the film deposited at a low deposition rate, higher substrate temperature, and under a high vacuum tended to be aligned perpendicular to the substrate.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.2
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• pp.55-59
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• 2003

In this study, $Al_xTa_{1-x}$(x=0.0∼1.0) alloy thin films were grown by RF-Magnetron sputtering system, and the structural, mechanical and electrical properties of samples were examined by 4-point probe, XRD, AFM and micro-Vickers hardness profiler. The electrical resistivity was maximum and the crystal quality was optimum for the samples with Al content x=0.245 (Al 24.5 at.%). Regarding the surface hillock formation, the hillock density decreased with an increase of Al content for the low Al content range, and the hillock was eliminated for the sample with Al=24.5 at.%. The hillock density increased with the further increase of Al content. The high values of micro-Vickers hardness were obtained for the samples with x=0.2∼0.45. The results obtained demonstrate that the crystal quality, electrical resistivity, surface morphology and micro-hardness are closely inter-related, and that the optimum physical properties are obtained for the sample with x=0.245.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.95-99
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• 2008

Cu has been used for metallic interconnects in ULSI applications because of its lower resistivity according to the scaling down of semiconductor devices. The resistivity of Cu lines will affect the RC delay and will limit signal propagation in integrated circuits. We investigated the electrolyte effects of the electroplating solution in the resistivity value of Cu films grown by electroplating deposition (EPD). The resistivity was measured with a four-point probe and the material properties were investigated with XRD (X-ray Diffraction), AFM (Atomic Force Microscope), FE-SEM (Field Emission Scanning Electron Microscope) and XPS (X-ray Photoelectron Spectroscopy). From these experimental results, we found that the electrolyte condition plays an Important role in formation of Cu film with lower resistivity by EPD.

• Polymer(Korea)
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• v.29 no.4
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• pp.392-398
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• 2005

Self-assembled multilayer thin films of poly(ethylene-alt-maleic anhydride) (PEMAh) and poly(4-vinyl pyridine) (P4VP) were fabricated by layer-by-layer (LbL) sequential adsorption. Fourier transform infrared (FT-IR) spectroscopic analysis of the self-assembled PEMAh/P4VP multilayer films confirms that the driving forces for the multilayer buildup are the intermolecular hydrogen bonding and electrostatic interactions. The linear increase of absorption peak of P4VP at 256 nm with increasing number of PEMAh/P4VP bilayers indicates that the multilayer buildup is an uniform assembling process. We also investigate the effects of polyelectrolyte concenhation variation of the dipping solution and pH variation of the PEMAh solution on the multilayer film formation. Thickness. adsorbed polyelectrolyte mass and surface roughness of the multilayer films were measured by UV-visible spectroscopy, quartz crystal microbalance (QCM), and atomic force microscopy (AFM), respectively.

• Korean Journal of Food Science and Technology
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• v.44 no.2
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• pp.247-250
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• 2012

Raw milk samples (n=28) obtained from milk tanks in 3 dairy plants of different regions and commercial milks (n=100) were collected from six cities. These samples were analyzed for the level of aflatoxin $M_1$ contamination using immunoaffinity columns and high performance liquid chromatography coupled with fluorescent detectors. Confirmation of aflatoxin $M_1$ ($AFM_1$) identified in positive samples was based on the formation of the hemiacetal derivative ($AFM_{2a}$) after derivatization with trifluroacetic acid. The average concentrations of aflatoxin $M_1$ in the raw milks were 25.1 ng/kg, and those values in commercial milks were 29.8 ng/kg. The highest level of aflatoxin $M_1$ in milk was 72.7 ng/kg. These results showed that the contamination of aflatoxin $M_1$ in milks consumed in the Korea was quite low compared to the standard in Korea Food Code (aflatoxin $M_1$ 500 ng/kg).

• Journal of Adhesion and Interface
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• v.15 no.2
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• pp.69-76
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• 2014

Two kinds of epoxy-functionalized alkoxysilane (EAS) compounds (EAS-MS and EAS-ES) were successfully synthesized through the reaction between epoxy resin (YD-128) and aminopropyl trimethoxysilane (APTMS) or aminopropyl triethoxysilane (APTES). By the hydrolysis-polycondensation reaction of EAS compounds with 3-Glycidyloxypropyl trimethoxysilane (GPTMS) and Tetraethyl orthosilicate (TEOS), silica/epoxy nanohybrids could be prepared at various compositions of EAS to GPTMS/TEOS. Prepared nanohybrids were yellow transparent and miscible with various organic solvents. By the reaction silica/epoxy nanohybrids with curing agents (TETA or acrylic acid), cured hybrids films could be obtained. These cured films showed higher thermal stability and mechanical property compared to cured neat epoxy resin. TEM and AFM images showed formation of nano-sized silica nanoparticles within cured hybrid films.