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Design of a CMOS Charge Pump PLL of UWB System LO Generation (초광대역 시스템 Hopping Carrier 발생을 위한 0.18um 4.224GHz CMOS PLL 설계)

  • Lee, J.K.;Kang, K.S.;Park, J.T.;Yu, C.G.
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.845-848
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    • 2005
  • This paper describes a 4.224GHz CMOS charge pump PLL for Mode 1 MB-OFDM UWB hopping carrier generation. It includes a qudrature VCO of which the frequency range is from 3.98GHz to 4.47GHz(@ 0.4 to 1.5 V), a divider, a PFD, a loop filter, a charge pump, and a lock detector. Designed in a 0.18um CMOS technology, the PLL draws 6.6mA from a 1.8V supply. The phase noise of the designed VCO is -133dBc/Hz@3MHz.

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Apoptosis Induction of HL-60 Leukemia Cells by Extract of Crinum asiaticum (문주란 추출물의 HL-60 백혈병 세포 Apoptosis 유도 효과)

  • Hyun, Jae-Hee;Kim, El-Vi-Ra;Kang, Jung-Il;Kim, Sang-Cheol;Yoo, Eun-Sook;Kang, Hee-Kyoung
    • YAKHAK HOEJI
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    • v.52 no.1
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    • pp.1-6
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    • 2008
  • The present study investigated the antiproliferative effects of Crnum asiaticum var. japonicum against HL-60 human leukemia cells. The 80% MeOH extract or several solvent fractions from the C. asiaticum inhibited the growth of HL-60 cells, whereas the growth of HEL-299 cells, human embryonic lung fibroblast, was scarcely inhibited. When the HL-60 cells were treated with the $CHCl_3$ fraction, the BuOH fraction, the EtOAc fraction and the $H_2O$ fraction, DNA ladder, chromatin condensation and increase of sub-G1 hypodiploid cells were observed. Furthermore, the $CHCl_3$ fraction and the BuOH fraction reduced Bc1-2 mRNA level, whereas Bax mRNA level was increased. These results suggest that the inhibitory effect of C. asiaticum on the growth of the HL-60 cell might be mediated through the induction of apoptosis via the down-regulation of Bc1-2. Taken together, components of C. asiaticum might have a therapeutic potential for the treatment of human leukemia.

Design and fabrication of GaAs MMIC VCO/Mixer for PCS applications (PCS영 GaAs VCO/Mixer MMIC 설계 및 제작에 관한 연구)

  • 강현일;오재응;류기현;서광석
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.5
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    • pp.1-10
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    • 1998
  • A GaAs MMIC composed of VCO (voltage controlled oscillator) and mixer for PCS receiver has been developed using 1.mu.m ion implanted GaAs MESFET process. The VCO consists of a colpitts-type oscillator with a dielectric resonator and the circuit configuration of the mixer is a dual-gate type with an asymmetric combination of LO and RF FETs for the improvement of intermodulation characteristics. The common-source self-biasing is used in all circuits including a buffer amplifier and mixer, achieving a single power supply (3V) operation. The total power dissipation is 78mW. The VCO chip shows a phase noise of-99 dBc/Hz at 100KHz offset. The combined VCO/mixer chip shows a flat conversion gain of 2dB, the frequency-tuning factor of 80MHz/volts in the varacter bias ranging from 0.5V to 0.5V , and output IP3 of dBm at varactor bias of 0V. The fabricated chip size is 2.5mm X 1.4mm.

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A 15-GHz CMOS Multiphase Rotary Traveling-Wave Voltage-Controlled Oscillator

  • Zhang, Changchun;Wang, Zhigong;Zhao, Yan;Park, Sung-Min
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.12 no.3
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    • pp.255-265
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    • 2012
  • This paper presents a 15-GHz multiphase rotary traveling-wave voltage-controlled oscillator (RTW VCO) where a shielded coplanar stripline (CPS) is exploited to provide better shielding protection and lower phase noise at a moderate cost of characteristic impedance and power consumption. Test chips were implemented in a standard 90-nm CMOS process, demonstrating the measured results of 2-GHz frequency tuning range, -11.3-dBm output power, -109.6-dBc/Hz phase noise at 1-MHz offset, and 2-ps RMS clock jitter at 15 GHz. The chip core occupies the area of $0.2mm^2$ and dissipates 12 mW from a single 1.2-V supply.

A Design of CMOS 5GHz VCO using Series Varactor and Parallel Capacitor Banks for Small Kvco Gain (작은 Kvco 게인를 위한 직렬 바랙터와 병렬 캐패시터 뱅크를 이용한 CMOS 5GHz VCO 설계)

  • Mi-Young Lee
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.24 no.2
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    • pp.139-145
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    • 2024
  • This paper presents the design of a voltage controlled oscillator (VCO) which is one of the key building blocks in modern wireless communication systems with small VCO gain (Kvco) variation. To compensate conventional large Kvco variation, a series varactor bank has been added to the conventional LC-tank with parallel capacitor bank array. And also, in order to achieve excellent phase noise performance while maintaining wide tuning range, a mixed coarse/fine tuning scheme(series varactor array and parallel capacitor array) is chosen. The switched varactor array bank is controlled by the same digital code for switched capacitor array without additional digital circuits. For use at a low voltage of 1.2V, the proposed current reference circuit in this paper used a current reference circuit for safety with the common gate removed more safely. Implemented in a TSMC 0.13㎛ CMOS RF technology, the proposed VCO can be tuned from 4.4GH to 5.3GHz with the Kvco (VCO gain ) variation of less than 9.6%. While consuming 3.1mA from a 1.2V supply, the VCO has -120dBc/Hz phase noise at 1MHz offset from the carrier of the 5.3 GHz.

An Oscillator and a Mixer for 140-GHz Heterodyne Receiver Front-End based on SiGe HBT Technology

  • Yoon, Daekeun;Song, Kiryong;Kaynak, Mehmet;Tillack, Bernd;Rieh, Jae-Sung
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.1
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    • pp.29-34
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    • 2015
  • This paper reports a couple of key circuit blocks developed for heterodyne receiver front-ends operating near 140 GHz based on SiGe HBT technology. Firstly, a 123-GHz oscillator was developed based on Colpitts topology, which showed -5 dBm output power and phase noise of -107.34 dBc/Hz at 10 MHz. DC power dissipation was 25.6 mW. Secondly, a 135 GHz mixer was developed based on a modified Gilbert Cell topology, which exhibited a peak conversion gain of 3.6 dB at 1 GHz IF at fixed LO frequency of 134 GHz. DC power dissipation was 3 mW, which mostly comes from the buffer.

Corrosion Behavior of Boron-Carbon-Nitride Films Synthesized by Magnet Sputtering (스퍼터링법으로 합성한 BCN 박막의 내식성)

  • Byon E.;Son M. S.;Lee G. H.;Kwon S. C.
    • Journal of the Korean institute of surface engineering
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    • v.36 no.3
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    • pp.229-233
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    • 2003
  • Boron-Carbon-Nitrogen (B-C-N) system is an attractive ternary material since it has not only an extremely high hardness but also a number of other prominent characteristics such as chemical inertness, elevated melting point, and low thermal expansion. In this paper, the corrosion behavior of B-C-N thin films in aqueous solution was investigated B-C-N films with different composition were deposited on a platinum plate by magnetron sputtering in the thickness range of 150-280 nm. In order to understand effect of pH of solutions, $BC_{2.\;4}N$ samples were immerged in 1M HCl, 1M NaCl, and 1M NaOH solution at 298k, respectively. BCN samples with different carbon contents were exposed to 1M NaOH solutions to investigate effect of chemical composition on corrosion resistance. Corrosion rates of samples were measured by ellipsometry, From results, optical constant of $BC_{2,\;4}N$ films was found to be $N_2=2.110-0.295i$. The corrosion rates of $Bi_{1.\;0}C_{2.\;4}N_{1.\;0}$ films were NaOH>NaCl>HCl in orders. With increasing carbon content in B-C-N films, the corrosion resistance of B-C-N films was enhanced. The lowest corrosion rate was obtained for $B_{1.\;0}C_{4.\;4}N_{1.\;9}$ film.

Design of a 5.2GHz/2.4GHz Dual band CMOS Frequency Synthesizer for WLAN (WLAN을 위한 5.2GHz/2.4GHz 이중대역 주차수 합성기의 설계)

  • Kim, Kwang-Il;Lee, Sang-Cheol;Yoon, Kwang-Sub;Kim, Seok-Jin
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.32 no.1A
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    • pp.134-141
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    • 2007
  • This paper presents a frequency synthesizer(FS) for 5.2GHz/2.4GHz dual band wireless applications which is designed in a standard $0.18{\mu}m$ CMOS1P6M process. The 2.4GHz frequency is obtained from the 5.2GHz output frequency of Voltage Controlled Oscillator (VCO) by using the Switched Capacitor (SC) and the divider-by-2. Power dissipations of the proposed FS and VCO are 25mW and 3.6mW, respectively. The tuning range of VCO is 700MHz and the locking time is $4{\mu}s$. The simulated phase noise of PLL is -101.36dBc/Hz at 200kHz offset frequency from 5.0GHz with SCA circuit on.

Effect of boron-enriched complex fertilizer on the growth of apple tree (붕소첨가(硼素添加) 복비(複肥)의 사과나무 생육(生育)에 미치는 영향(影響))

  • Oh, Wang Keum;Lee, Chong Hwa;Kim, Yong Koo;Park, Hoon
    • Korean Journal of Soil Science and Fertilizer
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    • v.11 no.1
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    • pp.9-16
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    • 1978
  • In order to establish a better combination of nutrients of complex fertilizer for apple tree a boron-enriched complex fertilizer ($N-P_2O_5-K_2O-B_2O_5-MgO$: 10 10-0.2-2.0) was compared with various treatments using urea superphosphate, potash muriate, usual complex fertilizer (22-22-11) and borax in its effect on the various growth status such as total leaf weight per tree and shoot growth of dwarf Fuji (1 year old) and super type Starcreamson (3 year old) grown at comparatively poor soils. For Fuji grown on sandy red soils the boron-enriched complex fertilizer (BC) was best and followed by-usual complex fertilizer NPK only, NPK only+Boron, BC+high boron (17times) and no phosphorus in the order. For Starcreamson grown on heavy clayey soils CB+high boron and phosphorus was best and followed by BC, usual complex fertilizer, NPK only, BC+high boron, NPK+boron and no phosphorus in the order. Without compost in the poor heavy clayey soil the growth was worse with high boron and best with NPK+boron and followed by BC Growth was poor with high boron alone but better with phosphorus and high boron, and it was thought that boron was effective when it was distributed in soil with N.P.K. Fertilizer response of apple tree was well appeared on leaf length, new shoot length and total leaf weight per tree. Suitable formulation of a boron-enriched complex fertilizer for apple tree appeared as 10-20-10-0.6 ($N-P_2O_5-K_2O-B_2O_5$) for poor fields and fields with moderate fertility. Chemical analysis of leaves suggested Mg effect on the increase of leaf weight. Effect of Fe was similar to thatof of Mg.

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Power Consumption Change in Transistor Ratio of Ring Voltage Controlled Oscillator (링 전압 제어 발진기의 트랜지스터 비율에 따른 소모 전력 변화)

  • Moon, Dongwoo;Shin, Hooyoung;Lee, Milim;Kang, Inseong;Lee, Changhyun;Park, Changkun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.2
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    • pp.212-215
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    • 2016
  • In this paper, a 5.08 GHz Ring Voltage Controlled Oscillator(Ring VCO) was implemented using $0.18{\mu}m$ standard CMOS technology. The proposal Ring VCO is 3-stage structure. This research confirmed that the each stage's different transistor size ratio influence the current change and alter power consumption consequentially. This circuit is formed to control the current thereby adding the Current Mirror and to tune the frequency by supplying control voltage. It has an 65.5 %(1.88~5.45 GHz) tuning range. The measured output power is -0.30 dBm. The phase noise is -87.50 dBc/Hz @1 MHz offset with operating frequency of 5.08 GHz fundamental frequency. The total power consumption of Ring VCO is 31.2 mW with 2.4 V supply voltage.