• 대한수학회지
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• 제32권2호
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• pp.363-370
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• 1995

A famous result of Chow and Robbins [8] asserts that if ${X_n, n \geq 1}$ are independent and identically distributed (i.i.d.) random variables with $E$\mid$X_1$\mid$ = \infty$, then for each sequence of constants ${M_n, n \geq 1}$ either $$ (1) lim inf_{n\to\infty} $\mid$\frac{M_n}{\sum_{j=1}^{n}X_j}$\mid$ = 0 almost certainly (a.c.) $$ or $$ (2) lim sup_{n\to\infty}$\mid$\frac{M_n}{\sum_{j=1}^{n}X_j}$\mid$ = \infty a.c. $$ and thus $P{lim_{n\to\infty} \sum_{j=1}^{n}X_j/M_n = 1} = 0$. Note that both (1) and (2) may indeed prevail.

• Biotechnology and Bioprocess Engineering:BBE
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• 제6권4호
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• pp.274-278
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• 2001

Polymer membranes composed of N, N-dimethylaminoethyl methaccrylate(DMAEMA) and acrylamide(AAm)(or ethyl acrylamide(EAAm) were prepared to demonstrated the thermo-control of solute permeation. Poly DMEMA has a lower critical solution temperature(LCST) at around 50$\^{C}$ in water, With the copolymerization of DMAEMA with AAm (or EAAm) a shift in the LCST to a lowere temperature was observed, probably due to the formation of hydrogen bonds between the amide and N-N-dimethylamino groups. However, the temperature-induced phase transition of poly(DMAEMA-co-EAAm) did not show a similar trend to that of poly(DMAEMA- co-AAm) in the gel state. The hydrogen bonds in poly(DMAEMA-co-EAAm) were significantly disrupted with the formation a gel network, which led to a difference in the swilling behavior of polymer gels in response to temperature. To apply these polymers to temperature-sensitive sol-ute permeation, polymer membranes were prepared. The permeation pattern of hydrocortisone, used as the model solute, was explained based on the temperature-sensitive swelling behavior of the polymer membranes.

• 전기전자학회논문지
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• 제11권4호
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• pp.152-157
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• 2007

본 연구에서는 AlGaN/GaN HEMT (High electron mobility transistor)를 제작하고 20 mTorr의 챔버 압력과 15 sccm의 ${N_2}O$ 유량, 40 W의 RF 전력의 조건으로 원거리에서 형성된 플라즈마로 소스와 드레인 영역을 10초${\sim}$120초 동안 처리하여 HEMT의 전기적 특성을 관찰하였다. 상온에서 ${N_2}O$ 플라즈마에 처리한 경우 HEMT의 특성이 변화하지 않았으나 $200^{\circ}C$의 온도에서 10초 동안 처리한 경우 게이트 길이가 1um, 소스와 드레인 사이의 거리가 4um인 HEMT의 게이트 누설전류가 246 nA로부터 1.2 pA로 크게 감소하였다. 또한 25 um 떨어진 200um 폭의 두 활성층 사이 누설전류가 3 uA로부터 7 nA로 감소하였으며 720 ${\Omega}/{\box}$의 활성층의 면저항을 608 ${\Omega}/{\box}$로 감소시켜 도전율의 증가를 나타내기도 하였다. ${N_2}O$ 플라즈마의 처리에 의한 전기적 특성 개선은 10초 이내의 짧은 시간 동안 이루어지며 더 이상의 처리는 누설전류 특성 개선에 도움이 되지 않았다. 또한 ${N_2}O$ 플라즈마 처리로 개선된 특성은 $SiO_2$의 증착과 식각 후에도 개선된 특성이 유지되었다. ${N_2}O$ 플라즈마의 처리는 트랜지스터의 트랜스컨덕턴스와 드레인 전류의 증가, 드레인 전류의 차단특성의 개선에도 기여하여 고품위의 AlGaN/GaN HEMT 제작에 효과적으로 이용될 수 있음이 확인되었다.

• 한국토양비료학회지
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• 제28권2호
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• pp.160-164
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• 1995

농경지에 시용되는 질소질 비료의 대부분을 차지하는 요소를 대상으로 수도재배포장에서 요소태(Urea-N)와 암모늄태($NH_4-N$) 및 질산태($NO_3-N$) 질소의 농토를 조사함으로써 논토양에 시용되는 요소비료의 효율 증대 및 환경오염 방지에 기초가 되는 정량적인 자료를 얻고자 요소를 12kg N/10a(관행구)와 24kg N/10a(배비구) 수준으로 시용한 수도재배포장에서 수도재배기간 동안 침투수의 Urec-N, $NH_4-N$ 및 $NO_3-N$의 농도를 porous ceramic cup을 이용하여 토양깊이별로 조사한 결과는 다음과 같다. 관행구와 배비구 모두 전체 시비량의 50%를 기비로 사용한 후 12일이 지난 후에 채취한 침투수에서는 75cm 깊이에서도 Urea-N이 검출되었으며, 그 농도는 관행구 0.06 및 배비구 $0.12{\mu}g/m{\ell}$로서 배비구에서 높았다. 침투수의 $NH_4-N$ 농도는 수도의 영양생장기간 동안에는 변화가 컸지만 출수가 시작된 8월 중순 이후에는 $0.1{\mu}g/m{\ell}$로서 일정하였다. 침투수의 $NO_3-N$ 농도는 관행구 0.1~0.5 및 배비구 $0.2{\sim}0.5{\mu}g/m{\ell}$ 범위로서 요소 시용량간의 차이는 거의 없었다.

• 전기전자학회논문지
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• 제24권4호
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• pp.1167-1171
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• 2020

본 연구에서는 상시불통형 p-GaN 전력반도체소자의 신뢰성 향상을 위해 p-GaN 게이트막 내부의 전계를 완화하고자 p-GaN 게이트 도핑농도의 계조화를 제안한다. TCAD 시뮬레이션으로 균일한 도핑농도를 갖는 소자와 문턱전압과 출력 전류 특성이 동일하도록 p형 농도를 계조화하고 최적화하였다. p-GaN 게이트층에서의 전계 감소로 소자의 게이트 신뢰성이 개선될 수 있을 것으로 판단된다.

• 대한수학회보
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• 제41권3호
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• pp.393-401
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• 2004

In this paper, we apply the concept of the group \ulcorner(X,A) of self pair homotopy equivalences of a CW-pair (X, A) to the Postnikov system. By using a short exact sequence related to the group of self pair homotopy equivalences, we obtain the following result: for any Postnikov section X$\sub$n/ of a CW-complex X, the group \ulcorner(X$\sub$n/, A) of self pair homotopy equivalences on the pair (X$\sub$n/, X) is isomorphic to the group \ulcorner(X) of self homotopy equivalences on X. As a corollary, we have, \ulcorner(K($\pi$, n), M($\pi$, n)) ≡ \ulcorner(M($\pi$, n)) for each n$\pi$1, where K($\pi$,n) is an Eilenberg-Mclane space and M($\pi$,n) is a Moore space.

• 대한수학회지
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• 제51권5호
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• pp.1089-1104
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• 2014

An operator $T{\in}L(H)$, is said to belong to k-quasi class $A_n^*$ operator if $$T^{*k}({\mid}T^{n+1}{\mid}^{\frac{2}{n+1}}-{\mid}T^*{\mid}^2)T^k{\geq}O$$ for some positive integer n and some positive integer k. First, we will see some properties of this class of operators and prove Weyl's theorem for algebraically k-quasi class $A_n^*$. Second, we consider the tensor product for k-quasi class $A_n^*$, giving a necessary and sufficient condition for $T{\otimes}S$ to be a k-quasi class $A_n^*$, when T and S are both non-zero operators. Then, the existence of a nontrivial hyperinvariant subspace of k-quasi class $A_n^*$ operator will be shown, and it will also be shown that if X is a Hilbert-Schmidt operator, A and $(B^*)^{-1}$ are k-quasi class $A_n^*$ operators such that AX = XB, then $A^*X=XB^*$. Finally, we will prove the spectrum continuity of this class of operators.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.196-196
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• 2011

Molecular $N_2O$ has bee known to react over oxygen vacancy on a reduced rutile $TiO_2$(110)-1${\times}$1 surface to desorb as molecular $N_2$ leaving oxygen atom behind. In the present study, we investigated the reaction of $N_2O$ on rutile $TiO_2$(110) using temperature-programmed desorption (TPD). Our results indicate that $N_2O$ does not react over the oxygen vacancy under a typical UHV experimental condition. On a rutile $TiO_2$(110)-1${\times}$1 with a well-defined oxygen vacancy concentration of 5% ($2.6{\times}10^{13}/cm^2$), $N_2O$ desorption features show a monolayer peak maximum at 135 K followed by a small peak maximum at 170 K. When the oxygen vacancy is blocked with $H_2O$, the $N_2O$ peak at 170 K disappears completely, indicating that the peak is due to molecular $N_2O$ interacting with oxygen vacancy. The integrated amount of desorbed $N_2O$ plotted against the amount of adsorbed $N_2O$ however shows a straight line with no offset indicating no loss of $N_2O$ during our cycles of TPD measurements. In addition, our $N_2O$ uptake measurements at 70~100 K showed no $N_2$ (as a reaction product) desorption except contaminant $N_2$. Also, $H_2O$ TPD taken after $N_2O$ scattering up to 350 K indicates no change in the vacancy-related $H_2O$ desorption peak at 500 K showing no change in the oxygen vacancy concentration after the interaction with $N_2O$.

• 한국재료학회지
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• 제24권12호
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• pp.645-651
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• 2014

GaN is most commonly used to make LED elements. But, due to differences of the thermal expansion coefficient and lattice mismatch with sapphire, dislocations have occurred at about $109{\sim}1010/cm^2$. Generally, a low temperature GaN buffer layer is used between the GaN layer and the sapphire substrate in order to reduce the dislocation density and improve the characteristics of the thin film, and thus to increase the efficiency of the LED. Further, patterned sapphire substrate (PSS) are applied to improve the light extraction efficiency. In this experiment, using an AlN buffer layer on PSS in place of the GaN buffer layer that is used mainly to improve the properties of the GaN film, light extraction efficiency and overall properties of the thin film are improved at the same time. The AlN buffer layer was deposited by using a sputter and the AlN buffer layer thickness was determined to be 25 nm through XRD analysis after growing the GaN film at $1070^{\circ}C$ on the AlN buffer CPSS (C-plane Patterned Sapphire Substrate, AlN buffer 25 nm, 100 nm, 200 nm, 300 nm). The GaN film layer formed by applying a 2 step epitaxial lateral overgrowth (ELOG) process, and by changing temperatures ($1020{\sim}1070^{\circ}C$) and pressures (85~300 Torr). To confirm the surface morphology, we used SEM, AFM, and optical microscopy. To analyze the properties (dislocation density and crystallinity) of a thin film, we used HR-XRD and Cathodoluminescence.

• 한국대기환경학회지
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• 제20권6호
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• pp.749-758
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• 2004

Nitrous oxide ($N_2$O) has been known as an important trace gas due to the greenhouse gas and the major source of stratospheric oxide of nitrogen (NO). Soil is the major source of $N_2$O in nature. The physicochemical characteristics of soils affect the emission of $N_2$O from soil. These physicochemical parameters are soil moisture, soil temperature, and soil N content. Since these parameters are correlated to the flux of $N_2$O from soil individually and compositely, there still remain many unknowns in the mechanism to produce $N_2$O in soil and the roles of such physicochemical parameters which affect the soil $N_2$O emission. Soil $N_2$O fluxes were measured at different levels in water filled pore space (WFPS), soil temperature and soil N contents from the same amounts of soils which were sampled from agriculturally managed upland field in a depth of ～30 cm at Kunsan. The soil $N_2$O flux measurements were conducted in a laboratory with a closed flux chamber system. The optimum soil moisture and soil temperature were observed at 60% of WFPS and ～13$^{\circ}C$. The soil $N_2$O flux increased as soil N contents increases during the whole experimental hours (up to 48 hours). However, average $N_2$O flux decreased after ～30 hours when organic carbon was mixed with nitrogen in the sample soils. It is suggested that organic carbon could be important for the emission of $N_2$O, and that the ratio of N to C needs to be identified in the process of $N_2$O soil emission.