Journal of IKEEE (전기전자학회논문지)
- Volume 11 Issue 4
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- Pages.152-157
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- 2007
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- 1226-7244(pISSN)
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- 2288-243X(eISSN)
Reduction of gate leakage current for AlGaN/GaN HEMT by ${N_2}O$ plasma
${N_2}O$ 플라즈마에 의한 AlGaN/GaN HEMT의 누설전류 감소
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Yang, Jeon-Wook
(Department of Semiconductor Science and Technology/SPRC, Chonbuk National University)
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양전욱
(전북대학교 반도체과학기술학과/반도체물성연구소)
- Published : 2007.12.31
Abstract
AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated and the effect of
본 연구에서는 AlGaN/GaN HEMT (High electron mobility transistor)를 제작하고 20 mTorr의 챔버 압력과 15 sccm의