Browse > Article
http://dx.doi.org/10.7471/ikeee.2020.24.4.1167

Gate Field Alleviation by graded gate-doping in Normally-off p-GaN/AlGaN/GaN Hetrojunction FETs  

Cho, Seong-In (Dept. of Electronic and Electrical Engineering, Hongik University)
Kim, Hyungtak (Dept. of Electronic and Electrical Engineering, Hongik University)
Publication Information
Journal of IKEEE / v.24, no.4, 2020 , pp. 1167-1171 More about this Journal
Abstract
In this work, we proposed a graded gate-doping structure to alleviate an electric field in p-GaN gate layer in order to improve the reliability of normally-off GaN power devices. In a TCAD simulation by Silvaco Atlas, a distribution of the graded p-type doping concentration was optimized to have a threshold voltage and an output current characteristics as same as the reference device with a uniform p-type gate doping. The reduction of an maximum electric field in p-GaN gate layer was observed and it suggests that the gate reliability of p-GaN gate HFETs can be improved.
Keywords
Normally-off; p-GaN gate; heterojunction; graded doping; simulation; power devices;
Citations & Related Records
연도 인용수 순위
  • Reference
1 S. Liu, S. Yang, Z. Tang, Q. Jiang, C. Liu, M. Wang, and K. J. Chen, "Performance Enhancment of Normally-Off Al2O3/AlN/GaN MOS-Channel-HEMTs with and ALD-Grown AlN Interfacial Layer," in Proc. of the 26th Int. Symp. Power semiconductor Devices & IC's (ISPSD), 2014, pp.362-365. DOI: 10.1109/ISPSD.2014.6856051   DOI
2 K. J. Chen, L. Yuan, M. J. Wang, H. Chen, S. Huang, Q. Zhou, C. Zhou, B. K. Li, and J. N. Wang, "Physics of fluorine plasma ion implantation for GaN normally-off HEMT technology," Tech. Dig. Int. Electron Devices Meet., vol.1, pp.465-468, 2011. DOI: 10.1109/IEDM.2011.6131585   DOI
3 Y. Uemeto, M. Hikita, H. Ueno, H. Matsuo, H. Ishida, M. Yanagihara, T. Ueda, T. Tanaka, and D. Ueda, "Gate injection transistor (GIT) - A normally-off AlGaN/GaN power transistor using conductivity modulation," IEEE Trans. Electron Devices, vol.54, no.12, pp.3393-3399, 2007. DOI: 10.1109/TED.2007.908601   DOI
4 O. Hilt, A. Knauer, F. Brunner, E. Bahat-Treidel and J. Wurfl, "Normally-off AlGaN/GaN HFET with p-type GaN Gate and AlGaN Buffer," in Proc. of the 22nd Int. Symp. Power Semiconductor Devices & IC's (ISPSD), pp.347-350, 2010.
5 A. Stockman, E. Canato, A. Tajalli, M. Meneghini, G. Meneghesso, E. Zanoni, P. Moens and B. Bakeroot, "On the Origin of the Leakage Current in p-Gate AlGaN/GaN HEMTs," in Proc. IEEE Int. Rel. Phys. Symp., pp.4B.5-1-4B.5-4, 2018.
6 I. Hwang, J. Kim, H. S. Choi, H. Choi, J. Lee, K. Y. Kim, J. -B. Park, J. C. Lee, J. Ha, J. Oh, J. Shin and U. -I. Chung, "p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current," IEEE Electron Device Lett., vol.34, no.2, pp.202-204, 2013. DOI: 10.1109/LED.2012.2230312   DOI
7 T. -L. Wu, D. Marcon, S. You, N. Posthuma, B. Bakeroot, S. Stoffels, M. V. Hove, G. Groeseneken and S. Decoutere, "Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors," IEEE Electron Device Lett., vol.36, no.10, pp. 1001-1003, 2015. DOI: 10.1109/LED.2015.2465137   DOI
8 M. Meneghini, O. Hilt, J. Wuerfl and G. Meneghesso, "Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate," Energies, vol.10, no.2, p.153, 2017. DOI: 10.3390/en10020153   DOI
9 A. Stockman, F. Masin, M. Meneghini, E. Zanoni, G. Meneghesso, B. Bakeroot and P. Moens, "Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors," IEEE Trasn. Electron Devices., vol.65, no.12, pp.5365-5372, 2018. DOI: 10.1109/TED.2018.2877262   DOI
10 L. Efthymiou, G. Longobardi, G. Camuso, T. Chen and F. Udrea, "On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices," Appl. Phys. Lett, vol.110, no.12, pp.123502-1-123502-5, 2017. DOI: 10.1063/1.4978690   DOI