• Journal of the Korean Mathematical Society
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• v.32 no.2
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• pp.363-370
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• 1995

A famous result of Chow and Robbins [8] asserts that if ${X_n, n \geq 1}$ are independent and identically distributed (i.i.d.) random variables with $E$\mid$X_1$\mid$ = \infty$, then for each sequence of constants ${M_n, n \geq 1}$ either $$ (1) lim inf_{n\to\infty} $\mid$\frac{M_n}{\sum_{j=1}^{n}X_j}$\mid$ = 0 almost certainly (a.c.) $$ or $$ (2) lim sup_{n\to\infty}$\mid$\frac{M_n}{\sum_{j=1}^{n}X_j}$\mid$ = \infty a.c. $$ and thus $P{lim_{n\to\infty} \sum_{j=1}^{n}X_j/M_n = 1} = 0$. Note that both (1) and (2) may indeed prevail.

• Biotechnology and Bioprocess Engineering:BBE
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• v.6 no.4
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• pp.274-278
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• 2001

Polymer membranes composed of N, N-dimethylaminoethyl methaccrylate(DMAEMA) and acrylamide(AAm)(or ethyl acrylamide(EAAm) were prepared to demonstrated the thermo-control of solute permeation. Poly DMEMA has a lower critical solution temperature(LCST) at around 50$\^{C}$ in water, With the copolymerization of DMAEMA with AAm (or EAAm) a shift in the LCST to a lowere temperature was observed, probably due to the formation of hydrogen bonds between the amide and N-N-dimethylamino groups. However, the temperature-induced phase transition of poly(DMAEMA-co-EAAm) did not show a similar trend to that of poly(DMAEMA- co-AAm) in the gel state. The hydrogen bonds in poly(DMAEMA-co-EAAm) were significantly disrupted with the formation a gel network, which led to a difference in the swilling behavior of polymer gels in response to temperature. To apply these polymers to temperature-sensitive sol-ute permeation, polymer membranes were prepared. The permeation pattern of hydrocortisone, used as the model solute, was explained based on the temperature-sensitive swelling behavior of the polymer membranes.

• Journal of IKEEE
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• v.11 no.4
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• pp.152-157
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• 2007

AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated and the effect of ${N_2}O$ plasma on the electrical characteristics of the devices was investigated. The HEMT exposed to ${N_2}O$ plasma formed by 40 W of RF power in a chamber with pressure of 20 mTorr at a temperature of $200^{\circ}C$, exhibited a reduction of gate leakage current from 246 nA to 1.2 pA by 10 seconds treatment. The current between the two isolated active regions reduced from 3 uA to 7 nA and the sheet resistance of the active layer was lowered also. The variations of electrical characteristics for HEMT were occurred within a short time expose of 10 seconds and the successive expose did not influence on the improvements of gate leakage characteristics and conductivity of the active region. The reduced leakage current level was not varied by successive $SiO_2$ deposition and its removal. The transconductnace and drain current of AlGaN/GaN HEMTs were increased also by the expose to the ${N_2}O$ plasma.

• Korean Journal of Soil Science and Fertilizer
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• v.28 no.2
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• pp.160-164
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• 1995

This study was conducted to obtain quantitative data on the behavior of surface-applied urea to a paddy field which would help to protect against environmental pollution as well as to increase the efficiency of nitrogen fertilizer. The percolating water samples were collected with porous ceramic cups installed at 25, 50 and 75cm depths in a paddy field during the rice growing season(June 1992-September 1992) and analyzed for urea-N. NHAN and $NO_3-N$. In the paddy field to which urea fertilizer was applied at the rates of 12 and 24kg N/10a, the surface-applied urea was detected even at 75cm depth as the form of urea-N upto 12days after application. The maximum concentrations of urea-N in the percolating water sampled at 25, 50 and 75cm depths were the same irrespective of soil depth and the values were 0.06 and $0.12{\mu}g/m{\ell}$ for the application rates of 12 and 24kg N/10a respectively. The concentrations of $NH_4-N$ gradually decreased with time during the vegetative growth period : thereafter. the concentrations remained nearly constant. The maximum concentrations of $NH_4-N$ at 25cm depth were 1.2 and $5.6{\mu}g/m{\ell}$ for 12 and 24kg N/10a rate respectively. The $NO_3-N$ concentrations of percolating water ranged 0.1~0.5 and $0.2{\sim}0.5{\mu}g/m{\ell}$ for urea application rates of 12 and 24kg N/10a respectively. The nitrate concentration data suggest that nitrification process occurred continuously in paddy field during the rice growing season.

• Journal of IKEEE
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• v.24 no.4
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• pp.1167-1171
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• 2020

In this work, we proposed a graded gate-doping structure to alleviate an electric field in p-GaN gate layer in order to improve the reliability of normally-off GaN power devices. In a TCAD simulation by Silvaco Atlas, a distribution of the graded p-type doping concentration was optimized to have a threshold voltage and an output current characteristics as same as the reference device with a uniform p-type gate doping. The reduction of an maximum electric field in p-GaN gate layer was observed and it suggests that the gate reliability of p-GaN gate HFETs can be improved.

• Bulletin of the Korean Mathematical Society
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• v.41 no.3
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• pp.393-401
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• 2004

In this paper, we apply the concept of the group \ulcorner(X,A) of self pair homotopy equivalences of a CW-pair (X, A) to the Postnikov system. By using a short exact sequence related to the group of self pair homotopy equivalences, we obtain the following result: for any Postnikov section X$\sub$n/ of a CW-complex X, the group \ulcorner(X$\sub$n/, A) of self pair homotopy equivalences on the pair (X$\sub$n/, X) is isomorphic to the group \ulcorner(X) of self homotopy equivalences on X. As a corollary, we have, \ulcorner(K($\pi$, n), M($\pi$, n)) ≡ \ulcorner(M($\pi$, n)) for each n$\pi$1, where K($\pi$,n) is an Eilenberg-Mclane space and M($\pi$,n) is a Moore space.

• Journal of the Korean Mathematical Society
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• v.51 no.5
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• pp.1089-1104
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• 2014

An operator $T{\in}L(H)$, is said to belong to k-quasi class $A_n^*$ operator if $$T^{*k}({\mid}T^{n+1}{\mid}^{\frac{2}{n+1}}-{\mid}T^*{\mid}^2)T^k{\geq}O$$ for some positive integer n and some positive integer k. First, we will see some properties of this class of operators and prove Weyl's theorem for algebraically k-quasi class $A_n^*$. Second, we consider the tensor product for k-quasi class $A_n^*$, giving a necessary and sufficient condition for $T{\otimes}S$ to be a k-quasi class $A_n^*$, when T and S are both non-zero operators. Then, the existence of a nontrivial hyperinvariant subspace of k-quasi class $A_n^*$ operator will be shown, and it will also be shown that if X is a Hilbert-Schmidt operator, A and $(B^*)^{-1}$ are k-quasi class $A_n^*$ operators such that AX = XB, then $A^*X=XB^*$. Finally, we will prove the spectrum continuity of this class of operators.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.196-196
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• 2011

Molecular $N_2O$ has bee known to react over oxygen vacancy on a reduced rutile $TiO_2$(110)-1${\times}$1 surface to desorb as molecular $N_2$ leaving oxygen atom behind. In the present study, we investigated the reaction of $N_2O$ on rutile $TiO_2$(110) using temperature-programmed desorption (TPD). Our results indicate that $N_2O$ does not react over the oxygen vacancy under a typical UHV experimental condition. On a rutile $TiO_2$(110)-1${\times}$1 with a well-defined oxygen vacancy concentration of 5% ($2.6{\times}10^{13}/cm^2$), $N_2O$ desorption features show a monolayer peak maximum at 135 K followed by a small peak maximum at 170 K. When the oxygen vacancy is blocked with $H_2O$, the $N_2O$ peak at 170 K disappears completely, indicating that the peak is due to molecular $N_2O$ interacting with oxygen vacancy. The integrated amount of desorbed $N_2O$ plotted against the amount of adsorbed $N_2O$ however shows a straight line with no offset indicating no loss of $N_2O$ during our cycles of TPD measurements. In addition, our $N_2O$ uptake measurements at 70~100 K showed no $N_2$ (as a reaction product) desorption except contaminant $N_2$. Also, $H_2O$ TPD taken after $N_2O$ scattering up to 350 K indicates no change in the vacancy-related $H_2O$ desorption peak at 500 K showing no change in the oxygen vacancy concentration after the interaction with $N_2O$.

• Korean Journal of Materials Research
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• v.24 no.12
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• pp.645-651
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• 2014

GaN is most commonly used to make LED elements. But, due to differences of the thermal expansion coefficient and lattice mismatch with sapphire, dislocations have occurred at about $109{\sim}1010/cm^2$. Generally, a low temperature GaN buffer layer is used between the GaN layer and the sapphire substrate in order to reduce the dislocation density and improve the characteristics of the thin film, and thus to increase the efficiency of the LED. Further, patterned sapphire substrate (PSS) are applied to improve the light extraction efficiency. In this experiment, using an AlN buffer layer on PSS in place of the GaN buffer layer that is used mainly to improve the properties of the GaN film, light extraction efficiency and overall properties of the thin film are improved at the same time. The AlN buffer layer was deposited by using a sputter and the AlN buffer layer thickness was determined to be 25 nm through XRD analysis after growing the GaN film at $1070^{\circ}C$ on the AlN buffer CPSS (C-plane Patterned Sapphire Substrate, AlN buffer 25 nm, 100 nm, 200 nm, 300 nm). The GaN film layer formed by applying a 2 step epitaxial lateral overgrowth (ELOG) process, and by changing temperatures ($1020{\sim}1070^{\circ}C$) and pressures (85~300 Torr). To confirm the surface morphology, we used SEM, AFM, and optical microscopy. To analyze the properties (dislocation density and crystallinity) of a thin film, we used HR-XRD and Cathodoluminescence.

• Journal of Korean Society for Atmospheric Environment
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• v.20 no.6
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• pp.749-758
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• 2004

Nitrous oxide ($N_2$O) has been known as an important trace gas due to the greenhouse gas and the major source of stratospheric oxide of nitrogen (NO). Soil is the major source of $N_2$O in nature. The physicochemical characteristics of soils affect the emission of $N_2$O from soil. These physicochemical parameters are soil moisture, soil temperature, and soil N content. Since these parameters are correlated to the flux of $N_2$O from soil individually and compositely, there still remain many unknowns in the mechanism to produce $N_2$O in soil and the roles of such physicochemical parameters which affect the soil $N_2$O emission. Soil $N_2$O fluxes were measured at different levels in water filled pore space (WFPS), soil temperature and soil N contents from the same amounts of soils which were sampled from agriculturally managed upland field in a depth of ～30 cm at Kunsan. The soil $N_2$O flux measurements were conducted in a laboratory with a closed flux chamber system. The optimum soil moisture and soil temperature were observed at 60% of WFPS and ～13$^{\circ}C$. The soil $N_2$O flux increased as soil N contents increases during the whole experimental hours (up to 48 hours). However, average $N_2$O flux decreased after ～30 hours when organic carbon was mixed with nitrogen in the sample soils. It is suggested that organic carbon could be important for the emission of $N_2$O, and that the ratio of N to C needs to be identified in the process of $N_2$O soil emission.