• Korean Journal of Materials Research
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• v.27 no.12
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• pp.695-698
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• 2017

ZnMgBeGaO/Ag/ZnMgBeGaO multilayer structures were sputter grown and characterized in detail. Results indicated that the electrical properties of the ZnMgBeGaO films were significantly improved by inserting an Ag layer with proper thickness (~ 10 nm). Structures with thicker Ag films showed much lower optical transmission, although the electrical conductivity was further improved. It was also observed that the electrical properties of the multilayer structure were sizably improved by annealing in vacuum (~35 % at $300^{\circ}C$). The optimum ZnMgBeGaO(20nm)/Ag(10nm)/ZnMgBeGaO(20nm) structure exhibited an electrical resistivity of ${\sim}2.6{\times}10^{-5}{\Omega}cm$ (after annealing), energy bandgap of ~3.75 eV, and optical transmittance of 65 % ~ 95 % over the visible wavelength range, representing a significant improvement in characteristics versus previously reported transparent conductive materials.

• Transactions of the Society of Information Storage Systems
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• v.2 no.1
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• pp.38-42
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• 2006

We report the random pattern characteristics of the super resolution near field structure(Super-RENS) write once read-many(WORM) disc at a blue laser optical system(laser wavelength 405nm, numerical aperture 0.85) and the Super-RENS read only memory(ROM) disc at a blue laser optical system(laser wavelength 659nm, numerical aperture 0.65). We used the WORM disc of which carrier-to-noise ratio(CNR) of 75nm is 47dB and ROM disc of which carrier-to-noise ratio(CNR) of 173nm is 45dB. We controlled the equalization(EQ) characteristics and used advanced partial-response maximum likelihood(PRML) technique. We obtained bit error rate(bER) of 10-3 level at 50GB WORM disc and bite error rate of 10-4 level at 50GB level ROM disc. This result shows high feasibility of Super-RENS technology for practical use.

• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.755-761
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• 2008

We fabricated thermally evaporated 10 nm-Ni/1 nm-Ir/(poly)Si films to investigate the energy saving property of silicides formed by rapid thermal annealing (RTA) at the temperature range of $300{\sim}1200^{\circ}C$ for 40 seconds. Moreover, we fabricated 100 nm-thick ITO/(poly)Si films with an rf-sputter as references. A transmission electron microscope (TEM) and an X-ray diffractometer were used to determine cross-sectional microstructure and phase changes. A UV-VIS-NIR and FT-IR (Fourier transform infrared spectroscopy) were employed for near-IR and middle-IR absorbance. Through TEM analysis, we confirmed 20~65 nm-thick silicide layers formed on the single and polycrystalline silicon substrates. Ir-inserted nickel silicide on single crystalline substrate showed almost the same absorbance in near IR region as well as ITO, but Ir-inserted nickel silicide on polycrystalline substrate, which had the uniform absorbance in specific region, showed better absorbance in near IR region than ITO. The Ir-inserted nickel silicide on polycrystalline substrate particularly showed better absorbance in middle IR region than ITO. The results imply that nano-thick Ir-inserted nickel silicides may have excellent absorbing capacity in near-IR and middle-IR region.

• Applied Chemistry for Engineering
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• v.19 no.1
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• pp.37-44
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• 2008

The multi-layer PET film of ITO/ATO was prepared by a wet coating method to obtain the transparent film with a high conductance at low cost. ITO nano-particles were synthesized by a SAS method at 15 MPa and $50^{\circ}C$, where optimized rate of In/Sn was 65. Average diameter and resistivity of ITO obtained from SAS are $15{\pm}2nm$ and $4{\times}10^4{\Omega}{\cdot}cm$. Coating solution was prepared at pH 10. Roughness (Ra), resistivity, and transmissivity of ATO film on PET are 9 nm, $5.5{\times}10^6{\Omega}{\cdot}cm$, and 91%. The multi-layered film of ITO/ATO was obtained by solution including 0.1, 0.5, 1.0, and 2.0 ITO wt% on ATO layer. Roughness (Ra) of multi-layered film with 0.1, 0.5, 1.0, and 2.0 ITO wt% is 4, 10, 12, and 16 nm, respectively. Corresponding resistivity with an increasing ITO concentration is $3.7{\times}10^6$, $2.4{\times}10^6$, $8{\times}10^5$, and $2{\times}10^5{\Omega}{\cdot}cm$. Transmissivity of ITO/ATO film decreases as 89, 88, 86, and 82% with an increasing ITO concentration as 0.1, 0.5, 1.0, and 2.0 wt%.

• Journal of the Korean Society of Radiology
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• v.8 no.7
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• pp.455-459
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• 2014

We grew the $Li_6Gd(BO_3)_3:Ce^{3+}$ scintillator and determined the scintillation and thermoluminescence properties for X-rays. The emission spectrum of $Li_6Gd(BO_3)_3:Ce^{3+}$ is located in the range of 370~500 nm, peaking at 423 nm an 455 nm, due to the $4f{\rightarrow}5d$ transition of $Ce^{3+}$ ions. The fluorescence decay time of the crystal is composed three components. The fast component is 60 ns (25%), the intermediate component is 787 ns (29%) and the slow component is $5.9{\mu}s$ (46%) of the crystal. The after-glow is caused by the electron and hole traps in the crystal lattice. We determined physical parameters of the traps in the crystal. The thermoluminescence trap are composed two traps. The determined activation energy (E), kinetic order (m) and frequency factor (s) of the first trap are 0.65 eV, 1.01 and $6.9{\times}10^8s^{-1}$. And, the determined activation energy, kinetic order and frequency factor of the second trap are 0.96 eV, 1.79 and $3.1{\times}10^{12 }s^{-1}$, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.4 s.346
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• pp.8-15
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• 2006

In this paper, the 94 GHz, low conversion loss, and high isolation single balanced mixer is designed and fabricated using GaAs-based metamorphic high electron mobility transistors (MHEMTs) with 70 nm gate length and the hybrid ring coupler with the micromachined transmission lines, dielectric-supported air-gapped microstrip lines (DAMLs). The 70 nm MHEMT devices exhibit DC characteristics with a drain current density of 607 mA/mm an extrinsic transconductance of 1015 mS/mm. The current gain cutoff frequency ($f_T$) and maximum oscillation frequency ($f_{max}$) are 320 GHz and 430 GHz, respectively. The fabricated hybrid ring coupler shows wideband characteristics of the coupling loss of $3.57{\pm}0.22dB$ and the transmission loss of $3.80{\pm}0.08dB$ in the measured frequency range of 85 GHz to 105 GHz. This mixer shows that the conversion loss and isolation characteristics are $2.5dB{\sim}>2.8dB$ and under -30 dB, respectively, in the range of $93.65GHz{\sim}94.25GHz$. At the center frequency of 94 GHz, this mixer shows the minimum conversion loss of 2.5 dB at a LO power of 6 dBm To our knowledge, these results are the best performances demonstrated from 94 GHz single balanced mixer utilizing GaAs-based HEMTs in terms of conversion loss as well as isolation characteristics.

• Journal of Korea Society of Industrial Information Systems
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• v.18 no.5
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• pp.9-14
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• 2013

This paper is designed frequency multiplier with low phase noise using DLL technique. The VCDL is designed using a differential structure to reduce common-mode noise. The proposed frequency multiplier is fabricated in a 65nm, 1.2V TSMC CMOS process, and the operating frequency range from 10MHz to 24MHz was measured. The SSB phase noise is measured to be -125dBc/Hz at 1MHz from 38.4MHz carrier. A total area of $0.032mm^2$were consumed in the chip, including the output buffer. Total current is 1.8mA at 1.2V supply voltage.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.9
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• pp.39-48
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• 2009

Human face tracking has gradually become an important issue in applications for portable multimedia devices such as digital camcorder, digital still camera and cell phone. Current embedded face tracking software implementations lack the processing abilities to track faces in real time mobile video processing. In this paper, we propose a power efficient hardware-based face tracking architecture operating in real time. The proposed system was verified by FPGA prototyping and ASIC implementation using Samsung 65nm CMOS process. The implementation result shows that tracking speed is less than 8.4 msec with 150K gates and 20 mW average power consumption. Consequently it is validated that the proposed system is adequate for portable multimedia device.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.12
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• pp.1236-1242
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• 2014

In this work, a D-band VCO(Voltage Controlled Oscillator) has been developed in a 65-nm CMOS technology. The circuit was designed based on push-push mechanism. The output oscillation frequency of the fabricated VCO varied from 152.7 GHz to 165.8 GHz, and the measured output power was from -17.3 dBm to -8.7 dBm. A phase noise of -90.9 dBc/Hz is achieved at 10 MHz offset. The chip size of the circuit is $470{\mu}m{\times}360{\mu}m$ including the probing pads.

• Journal of Internet Computing and Services
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• v.10 no.1
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• pp.1-9
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• 2009

In this paper, A pipeline structured-degree computationless modified Euclidean (PS-DCME) algorithm is proposed, which can be used for a RS(23,17) decoder for MB-OFDM system. PS-DCME algorithm requires a state machine instead of the degree computation and comparison circuits, so that the hardware complexity of the decoder can be reduced and high-speed decoder can be implemented. We have implemented a RS(23,17) decoder with PS-DCME using Verilog HDL and synthesized with Samsung 65nm library. From synthesis results, it can operate at clock frequency of 250MHz, and gate count is 19,827.