• Title/Summary/Keyword: 6 Sigma Process

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Controlling Factors for Productivity Improvement in Process of Plastic Injection Molding (플라스틱사출성형공정에서의생산성향상을위한제어인자들에관한연구)

  • Kim, Ki-Sun;Ree, Sang-Bok
    • Proceedings of the Korean Society for Quality Management Conference
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    • 2010.04a
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    • pp.62-66
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    • 2010
  • Company which produce the latest plastic products of survival dimension for competitive power security productivity elevation activity hard do. But enterprises is lacking value elevation activity that customer among product special quality is thinking heftily and isn't grasping well adjusted impact factors. So, addition quality failure cost is produced. In this research, investigated impact factor and factors influencing most heftily in quality for productivity elevation. As a result, present example that serve to control well importance benevolence.

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Low power 3rd order single loop 16bit 96kHz Sigma-delta ADC for mobile audio applications. (모바일 오디오용 저 전압 3 차 단일루프 16bit 96kHz 시그마 델타 ADC)

  • Kim, Hyung-Rae;Park, Sang-Hune;Jang, Young-Chan;Jung, Sun-Y;Kim, Ted;Park, Hong-June
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.777-780
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    • 2005
  • 모바일 오디오 적용을 위한 저전력 ${\Sigma}{\Delta}$ Modulator 에 대한 설계와 layout 을 보였다. 전체 구조는 3 차 단일 피드백 루프이며, 해상도는 16bit 을 갖는다. 샘플링 주파수에 따른 Over-sampling Ratio 는 128(46kHz) 또는 64(96kHz) 가 되도록 하였다. 차동 구조를 사용한 3 차 ${\Sigma}{\Delta}$ modulator 내의 적분기에 사용된 Op-Amp 는 DC-Gain 을 높이기 위해서 Gain-boosting 기법이 적용되었다. ${\Sigma}{\Delta}$ modulator 의 기준 전압은 전류 모드 Band-Gap Reference 회로에서 공급이 되며, PVT(Process, Voltage, Temperature) 변화에 따른 기준 전압의 편차를 보정하기 위하여, binary 3bit 으로 선택하도록 하였다. DAC 에서 사용되는 단위 커패시터의 mismatch 에 의한 성능 감소를 막기 위해, DAC 신호의 경로를 임의적으로 바꿔주는 scrambler 회로를 이용하였다. 4bit Quantizer 내부의 비교기 회로는 고해상도를 갖도록 설계하였고, 16bit thermometer code 에서 4bit binary code 변환시 발생하는 에러를 줄이기 위해 thermometer-to-gray, gray-to-binary 인코딩 방법을 적용하였다. 0.18um CMOS standard logic 공정 내 thick oxide transistor(3.3V supply) 공정을 이용하였다. 입력 전압 범위는 2.2Vp-p,diff. 이며, Typical process, 3.3V supply, 50' C 시뮬레이션 조건에서 2Vpp,diff. 20kHz sine wave 를 입력으로 할 때 SNR 110dB, THD 는 -95dB 이상의 성능을 보였고, 전류 소모는 6.67mA 이다. 또한 전체 layout 크기는 가로 1100um, 세로 840um 이다.

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A Study on the Creep Fracture Life of Al 7075 alloy( I ) (Al 7075 합금의 크리이프 파단수명에 관한 연구( I ))

  • 강대민
    • Journal of the Korean Society of Safety
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    • v.8 no.4
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    • pp.27-40
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    • 1993
  • High temperature tensile tests, steady state creep tests, Internal stress tests and creep rupture tests using A17075 alloy( $T_{6}$ ) were performed over the temperature range of 9$0^{\circ}C$~50$0^{\circ}C$ (0.4 $T_{m}$ ~0.85 $T_{m}$ ) and stress range of 0.64~17.2(kgf/$\textrm{mm}^2$). The main results obtained in this paper were as follows. (1) The activation energies for yielding at the temperature of 0.4 $T_{m}$ ~0.75 $T_{m}$ were calculated to be 25.7~36.5kcal/mol, which were nearly equal to the activation energies for creep. (2) At around the temperature of 9$0^{\circ}C$~12$0^{\circ}C$ and under the stress level of 10~17.2(kgf/$\textrm{mm}^2$), and at around the temperature of 200~41$0^{\circ}C$ and under the stress level of 1.53~9.55(kgf/$\textrm{mm}^2$) and again at around the temperature of 470~50$0^{\circ}C$ and under the stress level of 0.62~l.02(kgf/$\textrm{mm}^2$), the applied stress dependence of steady state creep rate $n_{measu}$ measured were, respectively, 3.15, 6.62 and 1.1, which were in good agreement the calculated stress dependence $n_{ealeu}$ obtained by the difference of the applied stress dependence of the Internal stress and the ratio of the internal stress to the applied stress. (3) At the temperature range of 0.4~0.43 $T_{m}$ , and at the temperature range of 0.52~0.75 $T_{m}$ and again at the temperature range of 0.82~0.85 $T_{m}$ , the activation energies $Q_{measu}$ obtained by steady state creep rate, respective, 26. 16, 34.9, 36.2 and 36.1kcal/mol, which were in good agreement with those obtained with the activation energies under constant effective stress and the temperature dependence of Internal stress. (4) At the temperature range of the 0.52~0.73 $T_{m}$ and under the stress level of 1.53~9.55(kgf/$\textrm{mm}^2$), the stress dependence of rupture life(n’) measured was 6.3~6.6, which was in good agreement with the stress dependence of steady state creep rate(n). And at the same condition the activation energy for rupture( $Q_{f}$ ) measured was 32.0~36.9kca1/mol, which was also in good agreement with the activation energy obtained by steady state creep rate ( $Q_{c}$ ). (5) The rupture life( $t_{f}$ ) might be represented by athermal process attributed to the difference of the applied stress dependence of the internal stress and the ratio of the internal stress to the applied stress, and the thermal activated process attributied to the temperature dependence of the internal stress as $t_{f}$ = A'$\sigma$$_{a}$ {n(1-d $\sigma$$_{i}$ /d $\sigma$$_{a}$ )/(1-$\sigma$$_{i}$ / $\sigma$$_{a}$ )}.exp[{ $Q_{c}$ $^{*}$-( $n_{o}$ R $T^2$/ $E_{(T)}$) (d $E_{(T)}$/dT) - ( $n_{0}$ R $T^2$/ $\sigma$$_{a}$ - $\sigma$$_{i}$ ) (d $\sigma$$_{i}$ /dT)}/RT]. (6) The relationship betwween Larson-Miller rupture parameter and logarithmic stress was linearly decreased, so creep rupture life of Al 7075 alloy seemed to be predicted exactly with Larson-Miller parameter.meter.

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A Study on the Implementation of Wave Soldering Process and the Solder Joint Reliability Using Sn-Cu-Ni Lead-free Solder (Sn-Cu-Ni계를 이용한 Pb-free Wave Soldering의 공정 적용 및 신뢰성에 관한 연구)

  • 유충식;정종만;김진수;김미진;이종연
    • Journal of the Microelectronics and Packaging Society
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    • v.8 no.4
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    • pp.47-52
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    • 2001
  • Pb-free wave soldering process of AC Adapter was implemented by six sigma method using Sn-Cu-Ni type solder. The solder joint appearance, microstructural change, a lift-off phenomenon and reliability were evaluated through thermal shuck test. $(Cu,Ni)_6/Sn_5$-type intermetallic compound of which thickness is about 5 $\mu\textrm{m}$ was found at solder joint between Sn-Cu-Ni solder and copper land. After applying the thermal shock test of as-soldered product up to 750 cycles, no crack was fecund at the solder joint. The newly developed product was superior to conventional one in terms of productivity and reliability.

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Design of a CMOS Single Bit 3rd Order Delta-Sigma Modulator with Switched Operational Amplifier (스위치드 연산증폭기를 이용한 CMOS 단일비트 3차 델타시그마 변조기 설계)

  • Lee, Han-Ul;Dai, Shi;Yoo, Tai-Kyung;Lee, Keon;Yoon, Kwang-Sub;Lee, Sang-Min
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.37 no.8A
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    • pp.712-719
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    • 2012
  • This paper presents Single-bit Third order Delta-Sigma Modulator, which can be applied to the Low speed High resolution ADC in Audio signal Process System. Whereas the Operational Amplifier in modulator consumed static power dissipation in operating, this modulator used Switching on/off techniques, which makes the Power dissipation of the modulator reduced. Also proposed modulator minimizes frequency characteristic variation by optimizing switch position. And this modulator chooses Single-bit type to guarantee stability. The designed ADC went through 0.35um CMOS n-well 1-poly 4-metal process to be a final product, and the final product has shown 17.1mW of power dissipation with 3.3V of Supply Voltage, 6.4MHz of conversion rate. And 84.3dB SNDR and 13.5bit ENOB with 20KHz of input frequency.

A Low-Voltage Low-Power Delta-Sigma Modulator for Cardiac Pacemaker Applications (심장박동 조절장치를 위한 저전압 저전력 델타 시그마 모듈레이터)

  • Chae, Young-Cheol;Lee, Jeong-Whan;Lee, In-Hee;Han, Gun-Hee
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.1
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    • pp.52-58
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    • 2009
  • A low voltage, low power delta-sigma modulator is proposed for cardiac pacemaker applications. A cascade of delta-sigma modulator stages that employ a feedforward topology has been used to implement a high-resolution oversampling ADC under the low supply. An inverter-based switched-capacitor circuit technique is used for low-voltage operation and ultra-low power consumption. An experimental prototype of the proposed circuit has been implemented in a $0.35-{\mu}m$ CMOS process, and it achieves 61-dB SNDR, 63-dB SNR, and 65-dB DR for a 120-Hz signal bandwidth at 7.6-kHz sampling frequency. The power consumption is only 280 nW at 1-V power supply.

A Spatio-Temporal Density Measurement of NO Molecules in Pulsed Barrier Discharge Using Laser Induced Fluorescence (레이져 유기형광법을 이용한 펄스 배리어 방전 공간에서의 NO분자에 대한 시·공간적 밀도변화 측정)

  • Han, Sang-Bo
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.24 no.5
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    • pp.160-168
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    • 2010
  • This paper tried to find out NO generation and removal mechanisms in the space of the atmospheric pulsed barrier discharge using laser induced fluorescence method, which is a very effective approach to the measurement of spatio-temporal density of specific molecules. The propagation velocity of the primary streamer reaches about $2.7{\times}10^6$[m/s] and the secondary streamer is produced in the vicinity of positive electrode after the primary streamer finished. In this work, pulse Nd:Yag and Dye lasers are used for generating the specific wavelength of 226[nm], which is possible to excite NO molecules into $A^2{\Sigma}^+{\rightarrow}X^2{\prod}$(0,0) and fluorescence signals as the transition of $A^2{\Sigma}^+{\leftarrow}X^2$(0,2) is measured. For the effective removal of NO molecules in the plasma discharge process, the lower oxygen contents are needed and the influence of secondary streamer for the reduction mechanism of NO molecules is important

Class-D Digital Audio Amplifier Using 1-bit 4th-order Delta-Sigma Modulation (1-비트 4차 델타-시그마 변조기법을 이용한 D급 디지털 오디오 증폭기)

  • Kang, Kyoung-Sik;Choi, Young-Kil;Roh, Hyung-Dong;Nam, Hyun-Seok;Roh, Jeong-Gin
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.3
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    • pp.44-53
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    • 2008
  • In this paper, we present the design of delta-sigma modulation-based class-D amplifier for driving headphones in portable audio applications. The presented class-D amplifier generates PWM(pulse width modulation) signals using a single-bit fourth-order high-performance delta-sigma modulator. To achieve a high SNR(signal-to-noise ratio) and ensure system stability, the locations of the modulator loop filter poles and zeros are optimized and thoroughly simulated. The test chip is fabricated using a standard $0.18{\mu}m$ CMOS process. The active area of the chip is $1.6mm^2$. It operates for the signal bandwidth from 20Hz to 20kHz. The measured THD+N(total harmonic distortion plus noise) at the $32{\Omega}$ load terminal is less than 0.03% from a 3V power supply.

A Study on Identifying Factors Affecting Improvement for Academic Libraries Multimedia Services Using Six Sigma Methodology (6시그마 도구를 활용한 대학도서관 멀티미디어 서비스 개선 변수 도출에 관한 연구)

  • Noh, Dong-Jo;Nam, Min-Seok
    • Journal of the Korean Society for information Management
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    • v.30 no.1
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    • pp.111-129
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    • 2013
  • This study analyzed the process of multimedia services and indexed the core quality characteristics through the tools employed in 'Define' and 'Measure' steps of the 6 Sigma DMAIC methodology. To achieve the goal, as a case study of 'S' University Central Library, first, brainstorming technique was used to tap the librarians, second, interview with the half-time student workers, third, user's opinion on homepage was analyzed and lastly, the interview with the users. This study also drew some potential causal factors which would likely to affect the multimedia service using Process Map and C&E Diagram. Those factors were prioritized using X-Y matrix and Pareto Chart. This study revealed 14 factors affecting multimedia services: 'presence/absence of the persons who are in charge of selection', 'cycle of selection materials', 'presence/absence of seperated multimedia room', 'materials arrangement method', 'notification of popular materials', 'notification of documents arrivals', 'methods of noticing new arrivals', 'methods of ordering materials', 'cycle of checking order status', 'types of persons requesting materials', 'methods of requesting materials', 'checking of the status of the returned materials', 'methods of noticing materials in housed', and 'methods of ways to return overdue materials'.

Characteristic of Mass Transfer Volumetric Coefficient and Sauter Mean Diameter in a Liquid-Liquid Agitated Vessel (액-액 교반조내에서의 물질이동용량계수 및 액적경의 특성)

  • Lee, Young-Sei
    • Korean Chemical Engineering Research
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    • v.50 no.5
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    • pp.913-922
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    • 2012
  • Grasp of characteristics within liquid-liquid agitated vessel are very important to environment and chemical industry. Mass transfer volumetric coefficient and the Sauter mean diameter of near the droplet were measured by varying the impeller position and liquid height using the alkaline hydrolysis reaction of esters. As a result, following their good correlation was obtained. $$d_{32}=0.270\(\frac{{\sigma}^{0.6}}{{\rho}^{0.2}P^{0.4}_{Vi}}\)k_La=0.49\(\frac{6{\phi}D_A}{d^2_{32}}\)\(\frac{P_Vd^4_{32}}{{\rho}v^3}\)^{0.193}Sc^{1/3}$$.