• Korean Journal of Soil Science and Fertilizer
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• v.42 no.5
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• pp.399-407
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• 2009

Laser induced breakdown spectroscopy(LIBS) is an simple analysis method for directly quantifying many kinds of soil micro-elements on site using a small size of laser without pre-treatment at any property of materials(solid, liquid and gas). The purpose of this study were to find an optimum condition of the LIBS measurement including wavelengths for quantifying soil elements, to relate spectral properties to the concentration of soil elements using LIBS as a simultaneous un-breakdown quantitative analysis technology, which can be applied for the safety assessment of agricultural products and precision agriculture, and to compare the results with a standardized chemical analysis method. Soil samples classified as fine-silty, mixed, thermic Typic Hapludalf(Memphis series) from grassland and uplands in Tennessee, USA were collected, crushed, and prepared for further analysis or LIBS measurement. The samples were measured using LIBS ranged from 200 to 600 nm(0.03 nm interval) with a Nd:YAG laser at 532 nm, with a beam energy of 25 mJ per pulse, a pulse width of 5 ns, and a repetition rate of 10 Hz. The optimum wavelength(${\lambda}nm$) of LIBS for estimating soil and plant elements were 308.2 nm for Al, 428.3 nm for Ca, 247.8 nm for T-C, 438.3 nm for Fe, 766.5 nm for K, 85.2 nm for Mg, 330.2 nm for Na, 213.6 nm for P, 180.7 nm for S, 288.2 nm for Si, and 351.9 nm for Ti, respectively. Coefficients of determination($r^2$) of calibration curve using standard reference soil samples for each element from LIBS measurement were ranged from 0.863 to 0.977. In comparison with ICP-AES(Inductively coupled plasma atomic emission spectroscopy) measurement, measurement error in terms of relative standard error were calculated. Silicon dioxide(SiO2) concentration estimated from two methods showed good agreement with -3.5% of relative standard error. The relative standard errors for the other elements were high. It implies that the prediction accuracy is low which might be caused by matrix effect such as particle size and constituent of soils. It is necessary to enhance the measurement and prediction accuracy of LIBS by improving pretreatment process, standard reference soil samples, and measurement method for a reliable quantification method.

• Nuclear Engineering and Technology
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• v.55 no.11
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• pp.3935-3939
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• 2023

The paper presents the results of a study of radioactive noble gases and from decay products in the atmosphere of the reactor hall of the research nuclear reactor IVV-2M. The distribution of short-lived ⁸⁸Rb and ¹³⁸Cs activity by sizes of aerosol particles was measured in the range of 0.5-1000 nm. It is shown that radioactive aerosols are characterized by three main modes with AMTD 2-3 nm, 7-15 nm and 400 nm. About 70% of aerosol activity is due to ⁸⁸Rb. The equilibrium factor between ⁸⁸Kr and ⁸⁸Rb is 0.2 ± 0.1. The total concentration of aerosols particles was measured using an aerosol diffusion spectrometer. The value of unattached fraction of radioactive aerosols in the atmosphere of reactor hall IVV2M was f = 0.15-0.25 at the average total aerosol particles concentration from 20,000 cm³ to 53,000 cm³.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.313-313
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• 2012

In recent years there have been many studies of InGaN/GaN based light emitting diodes (LEDs) in order to progress the performance of luminescence. Many previous literatures showed the performance of LEDs by changing the LED structures and substrates. However, the studies carried out by the researchers so far were very complicated and sometimes difficult to apply in practice. Therefore, we propose one simple method of changing the thickness and the numbers of multiple quantum wells (MQWs) in order to optimize their effects. In our research, we investigated electrical and optical properties by changing the well thickness and the number of quantum well (QW) pair in LED structures by growing the structure -inch Si (111) wafer. We defined the samples from LED_1 to LED_3 according to MQW structure. Samples LED_1, LED_2 and LED_3 consist of 5-pair InGaN/GaN (3.5 nm/ 4.5 nm), 5-pair InGaN/GaN (3 nm/4.5 nm) and 7-pair InGaN/GaN (3.5 nm/4.5 nm), respectively. We characterized electrical and optical properties by using electroluminescence (EL) measurement. Also, Efficiency droop was analyzed by calculating external quantum efficiency (EQE) with varying injection current. The EL spectra of three samples show different emission wavelength peaks, FWHM and the blueshift of wavelength caused by screening the internal electric field because of the effect of different MQW structure. The results of optical properties show that the LED_2 sample reduce the internal electric field in QW than LED_1 from EL spectra. the increase in the number of QW pairs reduces the strain and increase the In composition in MQW. And, the points of efficiency droop's peak show different trend from LED_1 to LED_3. It is related with the carrier density in active region. Thus, from the results of experiments, we are able to achieve high performance LEDs and a reduction of efficiency droop and emission wavelength blueshift by optimizing MQWs structure.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.190-197
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• 2011

This paper presents a 144 GHz divide-by-2 injection locked frequency divider (ILFD) with inductive feedback developed in a commercial 90-nm Si RFCMOS technology. It was demonstrated that division-by-2 operation is achieved with input power down to -12 dBm, with measured locking range of 0.96 GHz (144.18 - 145.14 GHz) at input power of -3 dBm. To the authors' best knowledge, this is the highest operation frequency for ILFD based on a 90-nm CMOS technology. From supply voltage of 1.8 V, the circuit draws 5.7 mA including both core and buffer. The fabricated chip occupies 0.54 mm ${\times}$ 0.69 mm including the DC and RF pads.

• Analytical Science and Technology
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• v.16 no.6
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• pp.499-503
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• 2003

A high performance liquid chromatography gradient elution method with fluorescence detection for the determination of biotin in pure form and pharmaceutical preparations has been developed. BrMDMC gives intense fluorescence and the fluorescence was monitored with excitation at 360 nm and emission at 410 nm. The calibration curve for biotin shows good linearity over the range of 5 ~ 400 ng with correlation coefficient of 0.999. The detection limit of biotin was 2 ng and the result of recovery was 98.75% with relative standard deviation of 1.1%.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.9 s.339
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• pp.9-18
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• 2005

To make high-performance, low-power transistors beyond the technology node of 60 nm complementary metal-oxide-semiconductor field-effect transistors(C-MOSFETs) possible, the effect of electron mobility of the thickness of strained Si grown on a relaxed SiGe/SiO2/Si was investigated from the viewpoint of mobility enhancement via two approaches. First the parameters for the inter-valley phonon scattering model were optimized. Second, theoretical calculation of the electronic states of the two-fold and four-fold valleys in the strained Si inversion layer were performed, including such characteristics as the energy band diagrams, electron populations, electron concentrations, phonon scattering rate, and phonon-limited electron mobility. The electron mobility in an silicon germanium on insulator(SGOI) n-MOSFET was observed to be about 1.5 to 1.7 times higher than that of a conventional silicon on insulator(SOI) n-MOSFET over the whole range of Si thickness in the SOI structure. This trend was good consistent with our experimental results. In Particular, it was observed that when the strained Si thickness was decreased below 10 nm, the phonon-limited electron mobility in an SGOI n-MOSFT with a Si channel thickness of less than 6 nm differed significantly from that of the conventional SOI n-MOSFET. It can be attributed this difference that some electrons in the strained SGOI n-MOSFET inversion layer tunnelled into the SiGe layer, whereas carrier confinement occurred in the conventional SOI n-MOSFET. In addition, we confirmed that in the Si thickness range of from 10 nm to 3 nm the Phonon-limited electron mobility in an SGOI n-MOSFET was governed by the inter-valley Phonon scattering rate. This result indicates that a fully depleted C-MOSFET with a channel length of less than 15 m should be fabricated on an strained Si SGOI structure in order to obtain a higher drain current.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.3
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• pp.33-38
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• 2021

Recently, rollable and foldable displays are attracting great attention in the flexible display market due to their excellent form factor. To predict and prevent the mechanical failure of the display panels, it is essential to accurately understand the mechanical properties of brittle SiN_x thin films, which have been used as an insulating film in flexible displays. In this study, tensile properties of the ~130 nm- and ~320 nm-thick SiN_x thin films were successfully measured by coating a ~190 nm-thick organic nano-support-layer (PMMA, PS, P3HT) on the fragile SiN_x thin films and stretching the films as a bilayer state. Young's modulus values of the ~130 nm and ~320 nm SiN_x thin films fabricated through the controlled chamber pressure and deposition power (A: 1250 mTorr, 450 W/B: 1000 mTorr, 600 W/C: 750 mTorr, 700 W) were calculated as A: 76.6±3.5, B: 85.8±4.6, C: 117.4±6.5 GPa and A: 100.1±12.9, B: 117.9±9.7, C: 159.6 GPa, respectively. As a result, Young's modulus of ~320 nm SiN_x thin films fabricated through the same deposition condition increased compared to the ~130 nm SiN_x thin films. The tensile testing method using the organic nano-support-layer was effective in the precise measurement of the mechanical properties of the brittle thin films. The method developed in this study can contribute to the robust design of the rollable and foldable displays by enabling quantitative measurement of mechanical properties of fragile thin films for flexible displays.

• Journal of Advanced Navigation Technology
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• v.16 no.3
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• pp.440-448
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• 2012

Optimal net residual dispersion (NRD) and effective launching power range of optical transmission links with optical phase conjugator (OPC) and dispersion management (DM) for compensating the distorted wavelength division multiplexing (WDM) signals due to interaction of group velocity dispersion (GVD) and optical nonlinear effects. WDM systems considered in this research have optical links with the random distribution of residual dispersion per span (RDPS) in each single mode fiber (SMF) spans of only one half transmission section for designing the adaptive optical transmission system configurations. It is confirmed that optimal NRD is 10 ps/nm and effective launching power range is obtained to be -8~1 dBm under NRD = 10 ps/nm in optical links with total dispersion controlled by precompensation. And, it is also confirmed that optimal NRD is -10 ps/nm and effective launching power range is obtained to be -7.5~1 dBm under NRD = -10 ps/nm in optical links with total dispersion controlled by postcompensation.

• Journal of Convergence for Information Technology
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• v.7 no.5
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• pp.53-58
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• 2017

In the age of oil exhaustion, low cost, semi-transparent solar cell, the dye-sensitized solar cell (DSC) has attracted significant attention since 1991 of $Gr{\ddot{a}}tzel$ report. To enhance the light-harvest capability of the photoelectric electrode, and efficiency of photoelectric transformation of the DSC, scattering layer of various structure have been proposed to photoelectric electrode materials. The scattering center of scattering layer needs the large titanium dioxide nanoparticles of 250 - 300 nm in diameter. In this study, the large sized $TiO_2$ nanocyrstals of around 300 nm were synthesized using the modified sol-gel process. According to the analysis of XRD and TEM, the synthesized $TiO_2$ nanoparticles exhibit single crystals of anatase phase. The optical transmittance of the synthesized titanium dioxide film prepared by spin coating is around 50% at 550 nm. It is suitable for scattering layer as a scattering center, and expected to enhance the efficiency of photoelectric transformation of the DSC.

• Korean Journal of Food Science and Technology
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• v.29 no.3
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• pp.595-600
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• 1997

The antioxidant activity of the solvent fractions extracted from onion skin was examined. The antioxidant activity of methanol extract at the cencentration of 0.02% and 0.03% was stronger than that of mixed tocopherol. The antioxidant activity of the fractions of methanol extract increased in the order of butanol> ethyl acetate> ethyl ether> water fraction. The antioxidant activity of each fractions was strongly related with total phenol content and HDA. Further separation of butanol fraction by TLC yielded 6 fluorescent bands with Rf values of 0.20, 0.33, 0.49, 0.60 and 0.94. The total phenol content and HDA of fluorescent band, Rf 0.96, were remarkable higher than those of the other band and exhibited a strong UV absorption at 255 nm and 317 nm, which would be specifically produced by flavonol. Spectral analyses indicated that the major antioxidant component was quercetin aglycone (3,3',4',5,7-pentahydroxyflavone).