• Journal of Advanced Navigation Technology
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• v.12 no.5
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• pp.420-428
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• 2008

In this paper, Stack structure patch antenna has been designed and fabricated for wireless LAN applications. The patch and ground plane were used by PEC metal. It was 0.05 [mm] thick. In order to broaden the bandwidth of the antenna and improve of gain, the stack structured antenna with probe feed. The measured input return loss showed less than -10 [dB] at the broadband from 5100 to 6140 [MHz]. It's measured bandwidth was 1040 MHz. The gain of antenna in the E-plane and H-plane was 13 dBi and 3 dB beam width was $40^{\circ}$.

• Journal of the Korean Ceramic Society
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• v.40 no.8
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• pp.715-719
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• 2003

The Aerosol Deposition (AD) process will be proposed as a new fabrication technology for the integrated RF modules. $\alpha$-A1$_2$O$_3$ thick films were successfully grown on glass and Al substrates at room temperature by the AD process. Relative dielectric permittivity and loss tangent of the $Al_2$O$_3$ thick films on Al showed 9.5 and 0.005, respectively. To form microstrip lines on aerosol-deposited A1903 thick films, copper electroplating and lithography processes were employed, and the square-type cross section with sharp edges could be obtained. Low-pass LC filters with 10 GHz cutoff frequency were simulated by an electromagnetic analysis, exhibiting the validity of the AD process as a fabrication technology f3r integrated RF modules.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.1-7
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• 1999

The demands for the various type of directional coupler, which is for the sampling of the signal levels in mobile communication baseband or transceiver systems, are growing. The proposed dual directional coupler, which has three parallel coupled transmission lines, can provide the dual coupling and good isolation characteristics between the coupling ports. In this paper, the novel analysis method and the design equation of even and odd mode for the dual directional coupler, which is employing the asymmetrically coupled transmission lines, are proposed. Using the proposed method, the dual directional coupler for PCS system has been designed and fabricated. We obtained the desired coupling value and the high directivity of 40dB. Measured results show the validity of this design method.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.7
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• pp.636-645
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• 2015

In this paper, unusual harmonics noise problem of digital electronic products in mass production was introduced and a practical solution was proposed. Generally, 5th or higher harmonics noise level has been ignored in circuit designs because over 5th harmonics noise decreases by 40 (dB/decade). Through some measurements, it is confirmed that over 10th harmonics noise can propagate and radiate in case of a certain PCB or housing conditions. We propose a capacitively loaded micro-strip low pass filter for commercial products having spatial design constraints and measured the effectiveness. The proposed structure can solve both of the continual increment of harmonics noise level and the spatial design constraint of commercial products. We expect the proposed method be effectively used for various digital electronic products.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.5
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• pp.285-289
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• 2003

This paper proposes a 10 ${\mu}{\textrm}{m}$ thick oxide air-bridge structure which can be used as a substrate for RF circuits. The structure was fabricated by anodic reaction, complex oxidation and rnicrornachining technology using TMAH etching. High quality films were obtained by combining low temperature thermal oxidation (50$0^{\circ}C$, 1 hr at $H_2O$/O$_2$) and rapid thermal oxidation (RTO) process (105$0^{\circ}C$, 2 min). This structure is mechanically stable because of thick oxide layer up to 10 ${\mu}{\textrm}{m}$ and is expected to solve the problem of high dielectric loss of silicon substrate in RF region. The properties of the transmission line formed on the oxidized porous silicon (OPS) air-bridge were investigated and compared with those of the transmission line formed on the OPS layers. The insertion loss of coplanar waveguide (CPW) on OPS air-bridge was (about 1 dB) lower than that of CPW on OPS layers. Also, the return loss of CPW on OPS air-bridge was less than about - 20 dB at measured frequency region for 2.2 mm. Therefore, this technology is very promising for extending the use of CMOS circuitry to higher RF frequencies.

• Journal of electromagnetic engineering and science
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• v.14 no.2
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• pp.61-67
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• 2014

This paper presents a zero-IF CMOS RF receiver, which supports three channel bandwidths of 5/10/40MHz for LTE-Advanced systems. The receiver operates at IMT-band of 2,500 to 2,690MHz. The simulated noise figure of the overall receiver is 1.6 dB at 7MHz (7.5 dB at 7.5 kHz). The receiver is composed of two parts: an RF front-end and a baseband circuit. In the RF front-end, a RF input signal is amplified by a low noise amplifier and $G_m$ with configurable gain steps (41/35/29/23 dB) with optimized noise and linearity performances for a wide dynamic range. The proposed baseband circuit provides a -1 dB cutoff frequency of up to 40MHz using a proposed wideband OP-amp, which has a phase margin of $77^{\circ}$ and an unit-gain bandwidth of 2.04 GHz. The proposed zero-IF CMOS RF receiver has been implemented in $0.13-{\mu}m$ CMOS technology and consumes 116 (for high gain mode)/106 (for low gain mode) mA from a 1.2 V supply voltage. The measurement of a fabricated chip for a 10-MHz 3G LTE input signal with 16-QAM shows more than 8.3 dB of minimum signal-to-noise ratio, while receiving the input channel power from -88 to -12 dBm.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.2
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• pp.449-455
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• 2004

This paper presents a novel defect detection method for one chip RF front end with fault detection circuits using input matching measurement. We present a BIST circuit using 40.25{\mu}m$ CMOS technology. We monitor the input transient voltage of the RF front end to differentiate faulty and fault-free RF front end. Catastrophic as well as parametric variation fault models are used to simulate the faulty response of the RF front end. This technique has several advantages with respect to the standard approach based on current test stimulus and frequency domain measurement. Because DUT and fault detection circuits are implemented in the same chip, this test technique only requires use of digital voltmeter (RMS meter) and RF voltage source generator for simpleand inexpensive testing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.310-310
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• 2007

Mg-Si-O계 세라믹스에 glass frit 조성을 첨가하여 저온에서의 소결 특성 및 마이크로파 유전 특성을 연구하였다. 기존의 Mg-Si-O계 세라믹스는 우수한 유전특성을 가지고 있으나 높은 소결온도로 인하여 LTCC용 기판 소재로 적용이 어려웠다. 본 연구에서는 MgO, $SiO_2$를 이용하여 $Mg_2SiO_4$을 합성한 후, $B_2O_3-ZnO-Na_2O-SiO_2-Al_2O_3$계 glass 조성을 20~40wt%로 첨가하여 소결온도를 감소시켜 LTCC 기판 소재로서의 적용성을 고찰하였다. glass frit 함량이 증가함에 따라 밀도($g/cm^3$) 및 유전율(${\varepsilon}_r$)은 증가하였고 품질계수($Qxf_0$)값은 감소하였다. glass frit 함량이 40wt%일때 $900^{\circ}C$에서 1시간 소결한 소결체의 유전톡성은 유전율 (${\varepsilon}_4$) = 6.5. 품질계수 ($Qxf_0$) = 4,000(GHz), 온도계수 $(\tau_t)\;=\;{\pm}\;10ppm/^{\circ}C$로 우수한 특성을 확인하였다.

• Journal of IKEEE
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• v.24 no.4
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• pp.1028-1033
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• 2020

The existing in-band interference reduction method recommends the physical separation distance between wireless devices and interference signals, and the interference can be suppressed through the separation distance. If the in-band interference signals can be reduced in a wireless device, a margin can be given to the physical separation distance. Since there is an effect of extending the receiver dynamic range of receivers, it is highly useful for interference reduction and improvement method. In this paper, the structure of an in-band analog IRM(Interference Reduction Module) is proposed and the design and implementation of the proposed analog IRM are described. To design an analog IRM, the interference reduction performance according to the delay mismatch, phase error and the number of delay lines that affect the performance of the analog IRM was simulated. The proposed analog IRM composed of 16 delay lines was implemented and the implemented IRM has the interference reduction performance of about 10dB for a 5G(NR-FR1-TM-1.1) signal having a 40MHz bandwidth at a center frequency of 3.32GHz. The analog IRM proposed in this paper can be used as an in-band interference canceller.

• ETRI Journal
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• v.27 no.5
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• pp.551-556
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• 2005

We have demonstrated a high-power widely tunable sampled grating distributed Bragg reflector (SGDBR) laser integrated monolithically with a semiconductor optical amplifier (SOA) having a lateral tapered waveguide, which is the first to emit a fiber-coupled output power of more than 10 dBm using a planar buried heterostructure (PBH). The output facet reflectivity of the integrated SOA using a lateral tapered waveguide and two-layer AR coating of $TiO_2\;and\;SiO_2$ was lower than $3\;{\times}\;10^{-4}\;over$ a wide bandwidth of 85 nm. The spectra of 40 channels spaced by 50 GHz within the tuning range of 33 nm were obtained by a precise control of SG and phase control currents. A side-mode suppression ratio of more than 35 dB was obtained in the whole tuning range. Fiber-coupled output power of more than 11 dBm and an output power variation of less than 1 dB were obtained for the whole tuning range.