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http://dx.doi.org/10.4191/KCERS.2003.40.8.715

Room-temperature Preparation of Al2O3 Thick Films by Aerosol Deposition Method for Integrated RE Modules  

Tsurumi, Takaaki (Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology)
Nam, Song-Min (Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology)
Mori, Naoko (Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology)
Kakemoto, Hirofumi (Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology)
Wada, Satoshi (Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology)
Akedo, Jun (National Institute of Advanced Industrial Science and Technology(AIST))
Publication Information
Abstract
The Aerosol Deposition (AD) process will be proposed as a new fabrication technology for the integrated RF modules. $\alpha$-A1$_2$O$_3$ thick films were successfully grown on glass and Al substrates at room temperature by the AD process. Relative dielectric permittivity and loss tangent of the $Al_2$O$_3$ thick films on Al showed 9.5 and 0.005, respectively. To form microstrip lines on aerosol-deposited A1903 thick films, copper electroplating and lithography processes were employed, and the square-type cross section with sharp edges could be obtained. Low-pass LC filters with 10 GHz cutoff frequency were simulated by an electromagnetic analysis, exhibiting the validity of the AD process as a fabrication technology f3r integrated RF modules.
Keywords
Aerosol deposition; Integrated RF module; $Al_2$$O_3$ thick films; Integral substrate;
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