• Journal of IKEEE
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• v.26 no.2
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• pp.329-332
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• 2022

In this paper, retention characteristics of lateral charge migration according to parameters of 3D NAND flash memory to which ferroelectric (HfO₂) structure is applied and ∆V_th were analyzed. The larger the P_s, the greater maximum polarization possible in ferroelectric during Programming. Therefore, the initial V_th increases by about 1.04V difference at P_s 70µC/cm² than at P_s 25µC/cm². Also, electrons trapped after the Program operation causes lateral charge migration over time. Since ferroelectric maintains polarization without applying voltage to the gate after Programming, regardless of P_s value, polarization increases as P_r increases and the ∆V_th due to lateral charge migration becomes smaller by about 1.54V difference at P_r 50µC/cm² than P_r 5µC/cm².

• Journal of IKEEE
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• v.27 no.4
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• pp.399-404
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• 2023

In this paper, we analyzed the current path in the O/N/O (Oxide/Nitride/Oxide) structure of 3D NAND Flash memory and in the O/N/F (Oxide/Nitride/Ferroelectric) structure where the blocking oxide is replaced by a ferroelectric. In the O/N/O structure, when V_read is applied, a current path is formed on the backside of the channel due to the E-fields of neighboring cells. In contrast, the O/N/F structure exhibits a current path formed on the front side due to the polarization of the ferroelectric material, causing electrons to move toward the channel front. Additionally, we performed an examination of device characteristics considering channel thickness and channel length. The analysis results showed that the front electron current density in the O/N/F structure increased by 2.8 times compared to the O/N/O structure, and the front electron current density ratio of the O/N/F structure was 17.7% higher. Therefore, the front current path is formed more effectively in the O/N/F structure than in the O/N/O structure.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.196-203
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• 2004

A three-dimensional (3D) IC technology platform is presented for high-performance, low-cost heterogeneous integration of silicon ICs. The platform uses dielectric adhesive bonding of fully-processed wafer-to-wafer aligned ICs, followed by a three-step thinning process and copper damascene patterning to form inter-wafer interconnects. Daisy-chain inter-wafer via test structures and compatibility of the process steps with 130 nm CMOS sal devices and circuits indicate the viability of the process flow. Such 3D integration with through-die vias enables high functionality in intelligent wireless terminals, as vertical integration of processor, large memory, image sensors and RF/microwave transceivers can be achieved with silicon-based ICs (Si CMOS and/or SiGe BiCMOS). Two examples of such capability are highlighted: memory-intensive Si CMOS digital processors with large L2 caches and SiGe BiCMOS pipelined A/D converters. A comparison of wafer-level 3D integration 'lith system-on-a-chip (SoC) and system-in-a-package (SiP) implementations is presented.

• Journal of Physiology & Pathology in Korean Medicine
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• v.17 no.3
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• pp.684-692
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• 2003

The herbal extract(YMT_02) is a modified extracts from Yukmijihwang-tang(YMJ) to promote memory-enhancing. The YMJ extracts has been widely used as replenishing yin and tonifying the kidneys herbal medicine for hundred years ia Asian countries. The purpose of this study is to: 1) quantitatively evaluate the memory-enhancing effect of YMT_02 by passive avoidance test, 2) statistical evaluation of candidate gene expression (pentraxin. PEP-19, transthyretin) in rat hippocampus. The hippocampi of YMT_02 and control group were dissected and mRNA was further purified. After synthesizing cDNA using oligo-dT primer, the cDNA were applied to Real Time PCR. The results were as follows : 1) passive avoidance test showed enhancing memory retentin by YMT_02 treatment, 2) expression of pentraxin, that accelerate degenerating of neuronal cell, was significantly decreased, 3) the mRNA of genes that has been known to be associated with protecting neuronal cell degeneration, such as PEP-19 and transthyretin, were significantly increased upon YMT_02 treatment. From above results, the administration of YMT_02 which tonify the function of Kidneys could enhance the ability of memory and learning. In addition, the administration of YMT_02 enhance memory retention through modulating particular gene (pentraxin, PEP-19, transthyretin) expressions in hippocampu.

• IEMEK Journal of Embedded Systems and Applications
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• v.18 no.1
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• pp.31-40
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• 2023

Recent advances in flash technologies, such as 3D processing and multileveling schemes, have successfully increased the flash capacity. Unfortunately, these technology advances significantly degrade flash's reliability due to a smaller cell geometry and a finer-grained cell state control. In this paper, we propose an asymmetric BER-aware reliability optimization technique (aBARO), new flash optimization that improves the flash reliability. To this end, we first reveal that bit errors of 3D NAND flash memory are highly skewed among flash cell states. The proposed aBARO exploits the unique per-state error model in flash cell states by selecting the most error-prone flash states and by forming narrow threshold voltage distributions (for the selected states only). Furthermore, aBARO is applied only when the program time (tPROG) gets shorter when a flash cell becomes aging, thereby keeping the program latency of storage systems unchanged. Our experimental results with real 3D MLC and TLC flash devices show that aBARO can effectively improve flash reliability by mitigating a significant number of bit errors. In addition, aBARO can also reduce the read latency by 40%, on average, by suppressing the read retries.

• Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
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• v.32 no.2
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• pp.109-115
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• 2014

The aim of the study is to present a method to build an octree and to query from it for huge 3D point clouds of which volumes correspond or surpass the main memory, based on the memory-efficient octree developed by Han(2013). To the end, the method directly refers to 3D point cloud stored in a file on a hard disk drive instead of referring to that duplicated in the main memory. In addition, the method can save time to rebuild octree by storing and restoring it from a file. The memory-referring method and the present file-referring one are analyzed using a dataset composed of 18 million points surveyed in a tunnel. In results, the memory-referring method enormously exceeded the speed of the file-referring one when generating octree and querying points. Meanwhile, it is remarkable that a still bigger dataset composed of over 300 million points could be queried by the file-referring method, which would not be possible by the memory-referring one, though an optimal octree destination level could not be reached. Furthermore, the octree rebuilding method proved itself to be very efficient by diminishing the restoration time to about 3% of the generation time.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.3C
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• pp.286-295
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• 2003

In this paper, the wavelet image coder, that can encode the image to various bit rate with minimum memory usage, is proposed. The proposed coder is used the 2D significant coefficient array(SCA) that has bit level informal on of the wavelet coefficients to reduce the memory requirement in coding process. The 2D SCA is two dimensional data structure that has bit level information of the wavelet coefficients. The proposed algorithm performs the coding of the significance coefficients and coding of bit level information of wavelet coefficients at a time by using the 2D SCA. Experimental results show a better or similar performance of the proposed method when compared with conventional embedded wavelet coding algorithm. Especially, the proposed algorithm performs stably without image distortion at various b it rates with minimum memory usage by using the 2D SCA.

• The KIPS Transactions:PartD
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• v.14D no.7
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• pp.719-726
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• 2007

Recently, NAND flash memory has been used for a storage device in various mobile computing devices such as MP3 players, mobile phones and laptops because of its shock-resistant, low-power consumption, and none-volatile properties. However, due to the very distinct characteristics of flash memory, disk based systems and applications may result in severe performance degradation when directly adopting them on flash memory storage systems. Especially, when a B-tree is constructed, intensive overwrite operations may be caused by record inserting, deleting, and its reorganizing, This could result in severe performance degradation on NAND flash memory. In this paper, we propose an efficient buffer management scheme, called IBSF, which eliminates redundant index units in the index buffer and then delays the time that the index buffer is filled up. Consequently, IBSF significantly reduces the number of write operations to a flash memory when constructing a B-tree. We also show that IBSF yields a better performance on a flash memory by comparing it to the related technique called BFTL through various experiments.

• ETRI Journal
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• v.28 no.3
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• pp.347-354
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• 2006

The characteristic variation of 3-dimensional (3-D) solenoid-type embedded inductors is investigated. Four different structures of a 3-D inductor are fabricated by using a low-temperature co-fired ceramic (LTCC) process, and their s-parameters are measured between 50 MHz and 5 GHz. The circuit model parameters of each building block are optimized and extracted using the partial element equivalent circuit method and an HSPICE circuit simulator. Based on the model parameters, the characteristics of the test structures such as self-resonant frequency, inductance, and quality (Q) factor are analyzed, and predictive modeling is applied to the structures composed of a combination of the modeled building blocks. In addition, characteristic variations of the 3-D inductors with different structures using extracted building blocks are also investigated. This approach can provide a characteristic estimation of 3-D solenoid embedded inductors for structural variations.

• YAKHAK HOEJI
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• v.39 no.3
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• pp.231-242
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• 1995

Electroconvulsive shock (ECS) increases the activity of acetylchohnesterase and decreases in brain acetylcholine levels. A large amount of free fatty acids accumulated in the brain tissue affects cerebral blood flow, brain edema and inflammation and results in brain injury. The present study examined the effect of docosahexaenoic acid (DHA) and D,L-pyroglutamic acid (D,L-PCA) on the learning and memory deficit using the passive avoidance failure technique and on the change of acetylcholine and choline level in the cerebral cortex of ECS-induced mice. The application of ECS (25mA, 0.5sec) induced a significant decrease in memory function for 30 min. ECS-induced a significant decrease in cortical acetylcholine and choline levels 1 min following the ECS application, which were almost recovered to ECS control level after 30 min. DHA (20 mg/kg, i.p.). administered 24 hr before shock. prevented the ECS-induced passive avoidance failure and the decrease of acetylcholine level 1 min following the ECS application. DHA failed to elicit a change in cortical choline level. DHA did not affect memory function and the cortical Ach and choline level of normal mice. The administration of D,L-PCA (500 mg/kg, i.p.) increased the effect of DHA on memory function and the change of cortical acetylcholine level of ECS induced mice. These results suggest that DHA treatment may be contributed to the prevention against memory deficit, and to the activation of cholinergic system in the ECS induced mice.