• Title/Summary/Keyword: 3.5 GHz band

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Design of a Multiple Band-notched Wideband Circular Slot Antenna with Arc-shaped Slots

  • Yeo, Junho;Park, Cheol-Young
    • Journal of Korea Society of Industrial Information Systems
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    • v.18 no.1
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    • pp.11-17
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    • 2013
  • A design method to achieve multiple band-rejection characteristics in a wideband circular slot antenna is presented. First, a wideband circular slot antenna fed by a coplanar waveguide is designed to operate in the frequency range between 2.3 and 11GHz, which covers WLAN, WiBro, WiMAX, and UWB frequency bands. Next, resonant frequency variations of rejection bands are examined with respect to different slot locations and lengths when slots are inserted on the ground conductor and the circular patch of the antenna. When arc-shaped slots are placed close to the circular transition from a feeding part, multiple notch bands are obtained. In this case, a half of the guided wavelength of the first notch band corresponds to the slot length and other notch bands are integer-multiple of the first band. Single notch band can be obtained when the slot is located off the transition part. Based on this study, a wideband circular slot antenna with five band-rejection frequency bands at 2.45, 3.5, 4.9, 7.35, and 9.8GHz is designed and fabricated. The first arc-shaped slots are located in the ground conductor close to the circular transition from a feeding part to generate notch bands at 2.45, 4.9, 7.35, and 9.8GHz, while the second slot for 3.73 GHz is placed on top side in the circular patch. The proposed design method is validated by good agreement between the simulated and measured results.

Medium to Long Range Wireless Video Transmission Scheme in 2.4GHz Band with Beamforming (빔 형성을 적용한 2.4GHz 대역 중장거리 영상 전송 무선 기술)

  • Paik, Junghoon;Kim, Namho;Jee, Minki
    • Journal of Broadcast Engineering
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    • v.23 no.5
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    • pp.693-700
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    • 2018
  • In this paper, we propose a wireless video transmission scheme, providing medium and long range communication in the 2.4GHz band with beamforming. With this scheme, it is shown that the transmission rate of 32Mbps and received signal power of -77dBm is achieved with 4 antennas of 5dBi and 16dBm transmit power at each antenna connection for the distance of 3.6km. The scheme also provides transmission distance of 20km for 10~12Mbps with the 4 omni-directional antennas of 5dBi.

Design and Fabrication of K-band Attenuation Standard (K-대역 감소량 표준기의 설계 및 제작)

  • Lee Joo-Gwang;Kim Jeong-Hwan;Kang Jin-Seob;Kang Tae-Weon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.4 s.107
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    • pp.387-392
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    • 2006
  • In this paper, measurement scheme and uncertainty estimation of the K-band attenuation standard fitted with 3.5 mm coaxial connectors are described. The standard comprises a build-up chain of four steps of power ratio mea-surement and operates in the frequency range of 18 GHz to 26.5 GHz. The nominal attenuation of each step is around 20 dB and total dynamic range is 80 dB. The expanded uncertainty of the overall system is 0.01 dB at the confidence level of approximately 95%.

A 14-band MB-OFDM UWB CMOS LO Generator (CMOS 공정을 이용한 14개 LO 신호를 발생시키는 MB-OFDM UWB용 LO 생성 회로 블록 설계)

  • Seo, Yong-Ho;Shin, Sang-Woon;Kim, Chang-Wan
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.11
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    • pp.65-71
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    • 2010
  • This paper presents a 14-band LO generator architecture for MB-OFDM UWB systems using 3.1 GHz~10.6 GHz frequency band. The proposed LO generator architecture has been consisted of only one PLL and the fewest nonlinear components to generate 14 LO signals with high purity while consuming low dc power consumption. In addition, major spurious generated from the LO generator have been located in the out of UWB band. The proposed LO generator has been implemented in a $0.13-{\mu}m$ CMOS technology and consumes a dc power consumption of 93~103 mW from a 1.5 V supply. The simulation results show an in-band spurious suppression ratio of more than 41 dBc and a band-switching time of below 3 nsec.

Design of 94-GHz High-Gain Differential Low-Noise Amplifier Using 65-nm CMOS (65-nm CMOS 공정을 이용한 94 GHz 고이득 차동 저잡음 증폭기 설계)

  • Seo, Hyun-woo;Park, Jae-hyun;Kim, Jun-seong;Kim, Byung-sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.29 no.5
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    • pp.393-396
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    • 2018
  • Herein, a 94-GHz low-noise amplifier (LNA) using the 65-nm CMOS process is presented. The LNA is composed of a four-stage differential common-source amplifier and impedance matching is accomplished with transformers. The fabricated LNA chip shows a peak gain of 25 dB at 94 GHz and has a 3-dB bandwidth at 5.5 GHz. The chip consumes 46 mW of DC power from a 1.2-V supply, and the total chip area, including the pads, is $0.3mm^2$.

Design of a Dual-Band Loop-Type Ground Antenna Using Lumped-Elements (집중 소자를 사용한 이중 대역 루프형 그라운드 안테나 설계)

  • Lee, Hyung-Jin;Liu, Yang;Lee, Jae-Seok;Kim, Hyung-Hoon;Kim, Hyeong-Dong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.5
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    • pp.551-558
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    • 2012
  • This paper presents a dual band loop-type ground antenna using lumped-elements that control the impedance bandwidth and resonant frequency. The dual-band operation of the proposed antenna is realized by inserting an additional resonated loop feed structure into the reference ground antenna. As the proper value of the capacitor and the inductor are chosen, the impedance bandwidth of our antenna with voltage standing wave ratio(VSWR) equal to 3 is 85 MHz and 725 MHz at the 2.45 and 5.5 GHz frequency band, respectively. Its validity is demonstrated via both the computed and measured results. Good antenna patterns and efficiencies are achieved at the dual frequency bands, as well as the physically small antenna element size($10{\times}5mm^2$).

The low conversion loss and low LO power V-band MIMIC Up-mixer (낮은 LO 입력 및 변환손실 특성을 갖는 V-band MIMIC Up-mixer)

  • Lee Sang Jin;Ko Du Hyun;Jin Jin Man;An Dan;Lee Mun Kyo;Cho Chang Shik;Lim Byeong Ok;Chae Yeon Sik;Park Hyung Moo;Rhee Jin Koo
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.41 no.12
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    • pp.103-108
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    • 2004
  • In this paper, we present MIMIC(Millimeter-wave Monolithic Integrated Circuit) up-mixer with low conversion loss and low LO power for the V-band transmitter applications. The up-mixer was successfully integrated by using 0.1 ㎛ GaAs pseudomorphic HEMTs(PHEMTs) and coplanar waveguide (CPW) structures. The circuit is designed to operate at RF frequencies of 60.4 GHz, IF frequencies of 2.4 GHz, and LO frequencies of 58 GHz. The fabricated MIMIC up-mixer size is 2.3 mmxl.6 mm. The measured results show that the low conversion loss of 1.25 dB when input signal is -10.25 dBm at LO power of 5.4 dBm. The LO to RF isolation is 13.2 dB at 58 GHz. The fabricated V-band up-mixer represents lower LO input power and conversion loss characteristics than previous reported millimeter-wave up-mixers.

A Ka-Band 6-W High Power MMIC Amplifier with High Linearity for VSAT Applications

  • Jeong, Jin-Cheol;Jang, Dong-Pil;Yom, In-Bok
    • ETRI Journal
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    • v.35 no.3
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    • pp.546-549
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    • 2013
  • A Ka-band 6-W high power microwave monolithic integrated circuit amplifier for use in a very small aperture terminal system requiring high linearity is designed and fabricated using commercial 0.15-${\mu}m$ GaAs pHEMT technology. This three-stage amplifier, with a chip size of 22.1 $mm^2$ can achieve a saturated output power of 6 W with a 21% power-added efficiency and 15-dB small signal gain over a frequency range of 28.5 GHz to 30.5 GHz. To obtain high linearity, the amplifier employs a class-A bias and demonstrates an output third-order intercept point of greater than 43.5 dBm over the above-mentioned frequency range.

Dual Polarized Array Antenna for S/X Band Active Phased Array Radar Application

  • Han, Min-Seok;Kim, Ju-Man;Park, Dae-Sung;Kim, Hyoung-Joo;Choi, Jae-Hoon
    • Journal of electromagnetic engineering and science
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    • v.10 no.4
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    • pp.309-315
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    • 2010
  • A dual-band dual-polarized microstrip antenna array for an advanced multi-function radio function concept (AMRFC) radar application operating at S and X-bands is proposed. Two stacked planar arrays with three different thin substrates (RT/Duroid 5880 substrates with $\varepsilon_r$=2.2 and three different thicknesses of 0.253 mm, 0.508 mm and 0.762 mm) are integrated to provide simultaneous operation at S band (3~3.3 GHz) and X band (9~11 GHz). To allow similar scan ranges for both bands, the S-band elements are selected as perforated patches to enable the placement of the X-band elements within them. Square patches are used as the radiating elements for the X-band. Good agreement exists between the simulated and the measured results. The measured impedance bandwidth (VSWR$\leq$2) of the prototype array reaches 9.5 % and 25 % for the S- and X-bands, respectively. The measured isolation between the two orthogonal polarizations for both bands is better than 15 dB. The measured cross-polarization level is ${\leq}-21$ dB for the S-band and ${\leq}-20$ dB for the X-band.

Design of a Low Power Capacitor Cross-Coupled Common-Gate Low Noise Amplifier (캐패시터 크로스 커플링 방법을 이용한 5.2 GHz 대역에서의 저전력 저잡음 증폭기 설계)

  • Shim, Jae-Min;Jeong, Ji-Chai
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.3
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    • pp.361-366
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    • 2012
  • This paper proposes a low power capacitor cross-coupled 5.2 GHz band low noise amplifier(LNA) using the current-reused topology with the TSMC 0.18 ${\mu}m$ CMOS process. The proposed 5.2 GHz band LNA uses a capacitor cross-coupled $g_m$-boosting method for reducing current flow of circuit and a current-reused topology to decrease total power dissipation. The parallel LC networks are used to reduce size of spiral inductors. The simulation results show high gain of 17.4 dB and noise figure(NF) of 2.7 dB for 5.2 GHz.