• Journal of Power Electronics
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• v.10 no.3
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• pp.313-319
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• 2010

This paper proposes a new compensation algorithm for the current measurement errors in a DFIG (Doubly Fed Induction Generator). Generally, current measurement path with current sensors and analog devices has non-ideal factors like offset and scaling errors. As a result, the dq-axis currents of the synchronous reference frame have one and two times ripple components of the slip frequency. In this paper, the main concept of the proposed algorithm is implemented by integrating the 3-phase rotor currents into the stationary reference frame to compensate for the measured current ripples in a DFIG. The proposed algorithm has several beneficial features: easy implementation, less computation time, and robustness with regard to variations in the electrical parameters. The effectiveness of the proposed algorithm is verified by several experiments.

• Journal of Microbiology and Biotechnology
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• v.20 no.7
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• pp.1140-1151
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• 2010

Differences in DNA banding patterns, obtained by ribosomal intergenic spacer analysis (RISA), and nitrification were followed in a moving-bed biofilm reactor (MBBR) receiving municipal landfill leachate. Complete nitrification (>99%) to nitrate was obtained in the two-stage MBBR system with an ammonium load of 1.09 g N-$NH_4/m^2{\cdot}d$. Increasing the ammonium load to 2.03 g N-$NH_4/m^2{\cdot}d$or more caused a decline in process efficiency to 70-86%. Moreover, at the highest ammonium load (3.76 g N-$NH_4/m^2{\cdot}d$), nitrite was the predominant product of nitrification. Community succession was evident in both compartments in response to changes in ammonium load. Nonmetric multidimensional scaling (NMDS) supported by similarity analysis (ANOSIM) showed that microbial biofilm communities differed between compartments. The microbial biofilm was composed mainly of ammonia-oxidizing bacteria (AOB), with Nitrosomonas europeae and N. eutropha being most abundant. These results suggest that high ammonium concentrations suit particular AOB strains.

• Journal of Korea Society of Digital Industry and Information Management
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• v.11 no.1
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• pp.171-182
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• 2015

The general wavelet transform has profitable property in non-stationary signal analysis specially. The tunable Q-factor wavelet transform is a fully-discrete wavelet transform for which the Q-factor Q and the asymptotic redundancy r, of the transform are easily and independently specified. In particular, the specified parameters Q and r can be real-valued. Therefore, by tuning Q, the oscillatory behavior of the wavelet can be chosen to match the oscillatory behavior of the signal of interest, so as to enhance the sparsity of a sparse signal representation. The TQWT is well suited to fast algorithms for sparsity-based inverse problems because it is a Parseval frame, easily invertible, and can be efficiently implemented. The transform is based on a real valued scaling factor and is implemented using a perfect reconstruction over-sampled filter bank with real-valued sampling factors. The transform is parameterized by its Q-factor and its over-sampling rate, with modest over-sampling rates being sufficient for the analysis/synthesis functions to be well localized. This paper describes filter design of 2D discrete-time wavelet transform for which the Q-factor is easily specified. With the advantage of this transform, perfect reconstruction filter design and implementation for performance improvement are focused in this paper. Hence, the 2D transform can be tuned according to the oscillatory behavior of the image signal to which it is applied. Therefore, application for performance improvement in multimedia communication field was evaluated.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.2
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• pp.39-46
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• 2016

저전력화, 고성능화, 경박단소화로 발전해 나가는 전자산업의 트렌드에 부합하는 기술로 TSV는 진보된 3D IC에서 널리 사용되어질 가장 잠재력이 큰 기술이다. 미세공정의 한계에 근접하고 있는 만큼 그동안 전 세계 유수의 반도체 업체들과 연구소들이 TSV의 공정기술 및 전기적 성능을 향상시키기 위한 많은 노력을 기울이고 있다. 이러한 노력은 차원 Scaling의 한계 극복한 차세대 전자패키지 및 모듈 기술 분야의 원천 기술을 확보함으로써 관련 산업 분야의 기술 선도가 가능하고 초소형/고성능 시스템 및 부품 개발로 관련 지적 재산 획득이 가능하며, 국제적 전자산업 경쟁 우위를 유지하고, 새로운 시장 창출 및 시장 선점하기 위한 것이다. 본 글에서 기본적인 TSV 형성을 위한 공정기술에 대해 소개하였고, TSV를 등가회로로 표현하고, 전기적 성능을 빠르게 예측하기 위한 내용을 언급하였다. 또한 TSV 기술의 국내외 연구동향을 소개하면서 향후 반도체 시장에서 TSV 기술이 시장의 주도권을 쥔다고 할 수 있을 만큼, 앞으로도 3D 패키징에 대한 연구개발이 지속적일 것으로 기대한다.

• Journal of the Korean Society of Combustion
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• v.4 no.1
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• pp.131-139
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• 1999

A Numerical Analysis of NOx production in Hydrogen-Air flame is performed using the quasi-laminar reaction modelling. As results, in low global strain rate region, $U_F/D_F\;{\leq}\;50,000$, the quasi-laminar reaction modelling reproduces the experimentally observed EINOx half power scaling that the ratio of EINOx and flame residence time, $L_f^3(D_F^2U_F)$, is proportional to the square root of global strain rate. Thus, it suggests that turbulence-chemistry interaction has a minor impact on the trend of NOx production in low global strain rate region. However, the quasi-laminar reaction modelling predicts the higher temperature and NOx than experimentally observed. This overprediction may be due to the lack of radiation and quasi-laminar reaction modelling.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.68-73
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• 2006

We propose a damascene gate FinFET with Si nanocrystals implemented on bulk silicon wafer for low voltage flash memory device. The use of optimized SRON (Silicon-Rich Oxynitride) process allows a high degree of control of the Si excess in the oxide. The FinFET with Si nanocrystals shows high program/erase (P/E) speed, large $V_{TH}$ shifts over 2.5V at 12V/$10{\mu}s$ for program and -12V/1ms for erase, good retention time, and acceptable endurance characteristics. Si nanocrystal memory with damascene gate FinFET is a solution of gate stack and voltage scaling for future generations of flash memory device. Index Terms-FinFET, Si-nanocrystal, SRON(Si-Rich Oxynitride), flash memory device.

• The Journal of the Korea Contents Association
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• v.18 no.7
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• pp.165-176
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• 2018

With the development of information and communication technology, the possibility of utilizing 3D virtual reality in education has been sought. Especially, the screen composition in the virtual reality has the possibility of inducing the emotion of the user which may affect the learning. However, there is little research on what aspects of the screen can cause emotions. The purpose of this study is to analyze the user's perception of screen components inducing emotion in virtual reality learning environment. Using Multi Dimensional Scaling (MDS), the user's perception of the main screen in a representative virtual reality learning environment platform was investigated. As a result, the dimension of depth on the screen and the dynamics of the avatar related to the movement were confirmed. This study is meaningful to explore technical variables that can induce emotions among screen elements in virtual reality contents.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.70-79
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• 2016

This paper proposes a low-power range-scaled 14b 30 MS/s pipeline-SAR composite ADC for high-performance CIS applications. The SAR ADC is employed in the first stage to alleviate a sampling-time mismatch as observed in the conventional SHA-free architecture. A range-scaling technique processes a wide input range of 3.0VP-P without thick-gate-oxide transistors under a 1.8 V supply voltage. The first- and second-stage MDACs share a single amplifier to reduce power consumption and chip area. Moreover, two separate reference voltage drivers for the first-stage SAR ADC and the remaining pipeline stages reduce a reference voltage disturbance caused by the high-speed switching noise from the SAR ADC. The measured DNL and INL of the prototype ADC in a $0.18{\mu}m$ CMOS are within 0.88 LSB and 3.28 LSB, respectively. The ADC shows a maximum SNDR of 65.4 dB and SFDR of 78.9 dB at 30 MS/s, respectively. The ADC with an active die area of $1.43mm^2$ consumes 20.5 mW at a 1.8 V supply voltage and 30 MS/s, which corresponds to a figure-of-merit (FOM) of 0.45 pJ/conversion-step.

• Journal of the Korean Geotechnical Society
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• v.23 no.11
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• pp.49-58
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• 2007

Numerical experiments using a distinct element code (PFC3D) were carried out for the analysis of grout-material transfer in soil layers and also for the analysis of increase in mechanical strength after permeation grouting. For rapid analysis, up-scaling analysis in length scale was adopted, and the following observations were made from the numerical experiments. Firstly, the relative size of grout material with respect to the in situ soil particles controlled the transfer distance of the grout particles. When the size of grout particle was 0.2 to 0.25 times of the in situ soil particles, clogging of pore spaces among the in situ soil particles occurred, resulting in restricted propagation of grout particles. It was also found that there was a threshold value in the size of grout particle. Below the threshold value, the transfer distance of the grout particle did not increase with the decrease of particle size of the grout material. Secondly, the increase in cohesion and internal friction angle was observed in the numerical specimen with grouting treatment, but not with the untreated specimen.

• Progress in Superconductivity and Cryogenics
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• v.15 no.2
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• pp.16-19
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• 2013

The magneto-resistivity and electric field-current density (E-J) curves were investigated up to a magnetic field 9 T in the optimally doped $BaFe_{1.8}Co_{0.2}As_2$ single crystal with a superconducting temperature ($T_c$) of 24.6 K. The E-J Scaling behaviors below and above vortex glass transition temperature ($T_g$) were found, confirming the existence of the vortex glass phase transition. The critical exponents for the diverging spatial and time correlations at $T_g$, were obtained as v = $1.1{\pm}0.1$ and z = $4.5{\pm}0.3$, respectively. The obtained critical exponents are in good agreement with the predicted values of v ~ 1 - 2 and z > 4 within the 3D vortex glass theory.