• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.1
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• pp.27-32
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• 2003

Highly reproducible side-wall process for the fabrication of the fine gate length as small as 40nm was developed. This process was utilized to fabricate 40nm InGaAs HEMTs with the 65% strained channel. With the usage of the dual $SiO_2$ and $SiN_x$ dielectric layers and the proper selection of the etching gas, the final gate length (Lg) was insensitive to the process conditions such as the dielectric over-etching time. From the microwave measurement up to 40GHz, extrapolated fT and fmax as high as 371 and 345 GHz were obtained, respectively. We believe that the developed side-wall process would be directly applicable to finer gate fabrication, if the initial line length is lessened below the l00nm range.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.6
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• pp.562-569
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• 2009

Recently, Hi-pass system(non-stop electric toll collection) using DSRC is working. However, it has various problems such as system errors by EM wave interference or multi-path reflection. The EM wave absorber is able to solve these problems. In this paper, we designed and fabricated EM wave absorber using amorphous substance. As a result EM wave absorber with composition of amorphous metal powder:CPE=45:55 wt.% has the thickness of 2.65 mm and absorption ability was higher than 40 dB at 5.8 GHz.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.10a
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• pp.145-148
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• 2016

In this paper, we propose a design of Intra Prediction angular mode decision for high-performance HEVC encoder. Intra Prediction works by performing all 35 modes for efficient encoding. However, in order to process all of the 35 modes, the computational complexity and operational time required are high. Therefore, this paper proposes comparing the difference in the value of the original image pixel, using an algorithm that determines Angular mode efficiently. This new algorithm reduces the Hardware size. The hardware which is proposed was designed using Verilog HDL and was implemented in 65nm technology. Its gate count is 14.9k and operating speed is 2GHz.

• Korean Journal of Remote Sensing
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• v.28 no.2
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• pp.237-243
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• 2012

In this paper, an atmospheric effect of repetitive measurements of X-band (9.65 GHz) arc-rail type GB-SAR (ArcSAR) system was quantitatively analyzed. Four artificial triangular trihedral corner reflectors as stationary targets for getting stable back scattered signal during 43 hours continually. The results of the analysis showed that the phase of those stationary targets had changed maximum of 5 radian (12.4 mm) and total RMS error had was 1.62 radian (4 mm) during 65 repeated measuring time. The refractive index of air which was calculated using the temperature;humidity and pressure of atmosphere showed very close relationship with the phase difference. We could check the atmospheric correction was fulfilled by the correction of an atmospheric effect using refractive index during the selected 16 hours period showed that RMS error was dropped from 1.74 radian (4.3 mm) to 0.10 radian (0.24 mm).

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.24 no.4
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• pp.43-47
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• 2024

This paper introduces a phased-array single-channel transceiver beamformer IC built using 65nm CMOS technology, covering the 8-16 GHz range and targeting the X and Ku bands for radar and satellite communications. Each signal path in the IC features a low noise amplifier (LNA), power amplifier (PA), phase shifter (PS), and variable gain amplifier (VGA), which allow for phase and gain adjustments essential for beam steering and tapering control in typical beamforming systems. Test results show that the phase-compensated VGA offers a gain range of 15 dB with 0.25 dB increments and an RMS gain error of 0.27 dB. The active vector modulator phase shifter delivers a 360° phase range with 2.8125° steps and an RMS phase error of 3.5°.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.19-24
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• 2007

The effects of $B_2O_3-SiO_2-R(R;CaO,\;BaO,\;ZnO,\;Bi_2O_3)$ borosilicate glass system on the sintering behavior and microwave dielectric properties of ceramic/glass composites were investigated as functions of modifier, glass addition ($30{\sim}50\;vol%$) and sintering temperature ($500{\sim}900^{\circ}C$ for 2 hrs). The addition of 50 and 45 vol% glass ensured successful sintering below $900^{\circ}C$. Sintering characteristics of the composites were well described in terms of modifier. Borosilicate glass enhanced the reaction with $Al_{2}O_{3}$ to form pores, second phases and liquid phases, which was responsible to component of modifier. Dielectric constant (${\varepsilon}_{r},\;Q{\times}f_{o}$) and temperature coefficient of resonant frequency (${\tau}_{f}$) of the composite with 50 and 45 vol% glass contents($B_{2}O_{3}:SiO_{2}:R=25:10:65$) demonstrated A-CaBS(7.8, 2,560 GHz, -81ppm/$^{\circ}C$), A-BaBs(5.8, 3.130 GHz, -64 ppm/$^{\circ}C$), A-ZnBS(5.7, 17,800 GHz, -21 ppm/$^{\circ}C$), A-BiBs(45 vol% glass in total)(8.3, 2,700 GHz, -45 ppm/$^{\circ}C$) which is applicable to substrate requiring an low dielectric properties.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.65-81
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• 1996

In this study forty-five X-bnd rectangular microstrip patch antennas fed by microstrip line using ${\lambda}$/4 transformer were fabricated on teflon substrates with low high permittivities and varous thickness (substrate thickness : 0.6 ~ 2.4 mm, permittivities : 2.15 ~ 10.0), and effects of permittivity and electrical thickness on antenna characteristics were studied with measured return loss (1/S$_{11}$) and resonant frequencies. When substrate electrical thickness was greater than 0.060 ${\lambda}_{0}$return loss was very good and genrally more than 20 dB, but resonance characteristics was somewhat unstable. The more than 0.088 ${\lambda}_{0}$ the thickness was, the more unstable it was. As a result, in the rest range except 12, 13 GHz we had very good mesured return loss iwth greater than 20 dB, and in the range 7 to 9 GHz resonant frequencies were within $\pm$2 % error, on ${\epsilon}_{r}$=5.0, height = 2.4 mm substrate.

• 한국정보통신설비학회:학술대회논문집
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• 2008.08a
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• pp.414-417
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• 2008

This paper presents the design and analysis of 2.45GHz Low-IF Mixer using CMOS 0.18um. The Mixer is implemented by using the Gilbert-type configuration, current bleeding technique, and the resonating technique for the tail capacitance. And the design of this Double Balance Mixer is based on its lineaity since it is important in the interference cancellation system. The low flicker noise mixer is implemented by incorporating a double balanced Gilber-type configuration, the RF leakage-less current bleeding technique, and Cp resonating technique. The proposed mixer has a simulated conversion gain of 16dB a simulated IIP3 of -3.3dBm and P1dB is -19dBm. A simulated noise figure of 6.9dB at l0MHz and a flicker corner frequency of 510kHz while consuming only 10.65mW od DC power. The layout of Mixer for one-chip design in a 0.18-um TSMC process has 0.474mm$\times$0.39 mm size.

• Journal of electromagnetic engineering and science
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• v.5 no.2
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• pp.61-65
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• 2005

In this paper, a numerical permissible disturbance model is proposed to preserve a throughput performance of a 2.4 GHz wireless LAN service. The model is composed of two parameters, a peak value and a time rate of noise signal. The model parameters are experimentally determined from an APD parameter measurement. The APD parameter is measured by using the APD measurement method which is recommended from CISPR/A/447/CD.

• ETRI Journal
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• v.24 no.3
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• pp.190-196
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• 2002

This paper presents millimeter wave monolithic microwave integrated circuit (MMIC) low noise amplifiers using a $0.15{\mu}m$ commercial pHEMT process. After carefully investigating design considerations for millimeter-wave applications, with emphasis on the active device model and electomagnetic (EM) simulation, we designed two single-ended low noise amplifiers, one for Q-band and one for V-band. The Q-band two stage amplifier showed an average noise figure of 2.2 dB with an 18.3 dB average gain at 44 GHz. The V-band two stage amplifier showed an average noise figure of 2.9 dB with a 14.7 dB average gain at 65 GHz. Our design technique and model demonstrates good agreement between measured and predicted results. Compared with the published data, this work also presents state-of-the-art performance in terms of the gain and noise figure.