• Journal of international Conference on Electrical Machines and Systems
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• v.1 no.2
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• pp.10-17
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• 2012

This paper presents an improved iron loss model, for the computation of the no load iron loss in the stator core of the in-wheel permanent magnet synchronous motors (PMSM), for the cases of with and without stator skew. 2-D analytical model is used for the computation of tooth and yoke flux densities of the in-wheel PMSM. The no load iron loss computed by the improved iron loss model, for the cases of with and without skew is compared with the finite element method (FEM) and the results show good consistency.

• International Journal of Highway Engineering
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• v.19 no.4
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• pp.19-25
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• 2017

PURPOSES : In this paper, the flow of construction material was simulated using computational fluid dynamics in a 2D axisymmetric condition to evaluate the effect of initial or varying material properties on the final shape of a specimen. METHODS : The CFD model was verified by using a well-known analytical solution for a given test condition followed by performing a sensitivity analysis to evaluate the effect of material properties on the final shape of material. Varying dynamic viscosity and yield stress were also considered. RESULTS : The CFD model in a 2D axisymmetric condition agreed with the analytical solution for most yield stress conditions. Minor disagreements observed at high yield stress conditions indicate improper application of the pure shear assumption for the given material behavior. It was also observed that the variation of yield stress and dynamic viscosity during curing had a meaningful effect on the final shape of the specimen. CONCLUSIONS : It is concluded that CFD modeling in a 2D axisymmetric condition is good enough to evaluate fluidal characteristics of material. The model is able to consider varying yield stress and viscosity during curing. The 3D CFD-DEM coupled model may be required to consider the interaction of aggregates in fluid.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.1
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• pp.40-50
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• 2011

A two-dimensional (2D) analytical model for the potential distribution and threshold voltage of short-channel ion-implanted GaAs MESFETs operating in the sub-threshold regime has been presented. A double-integrable Gaussian-like function has been assumed as the doping distribution profile in the vertical direction of the channel. The Schottky gate has been assumed to be semi-transparent through which optical radiation is coupled into the device. The 2D potential distribution in the channel of the short-channel device has been obtained by solving the 2D Poisson's equation by using suitable boundary conditions. The effects of excess carrier generation due to the incident optical radiation in channel region have been included in the Poisson's equation to study the optical effects on the device. The potential function has been utilized to model the threshold voltage of the device under dark and illuminated conditions. The proposed model has been verified by comparing the theoretically predicted results with simulated data obtained by using the commercially available $ATLAS^{TM}$ 2D device simulator.

• Journal of Electrical Engineering and Technology
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• v.13 no.4
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• pp.1586-1595
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• 2018

For the problem that the complexity of 3-D modeling and multi parameter optimization, as well as the uncertainty of the winding factor of axial flux permanent magnet generator with coreless windings. The complex 3-D model was simplified into 2-D analytic model, and an analytical formula for the winding factor that adapting different coreless stator winding is proposed in this paper. The analytical solution for air-gap magnetic fields, no-load back EMF, electromagnetic torque, and efficiency are calculated by using this method. The multiple objective and multivariable optimization of the maximum fundamental and the minimum harmonic content of back EMF are performed by using response surface methodology. The proposed optimum design method was applied to make a generator. The generator was tested and the calculated results are compared with the proposed method, which show good agreements.

• Journal of the Korean Geotechnical Society
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• v.16 no.4
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• pp.5-16
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• 2000

THe purpose of this paper is to suggest the analytical method which can predict lateral nonlinear behavior in non-homogeneous soil using the coefficient of soil resistance and ultimate soil resistance. Those parameters are obtained through back analysis on the base of the results of a series of model tests.Analytical method of Chang is more or less difficult to predict nonlinear behavior in non-homogeneous sol. So, in this study, for the prediction of nonlinear behavior the compositive analytical method which apply the p - y curve to Chang model is suggested. Also, the program is developed to predict nonlinear behavior using the compositive analytical method and it can be used to calculated the deflection, bending moment and soil reaction with DFM in non-homogeneous soil. To establish applicability of the suggested analytical method, the results of model tests and field tests and Pentagon2D finite element program are compared with those of the compositive analytical method. In the analysis values of the coefficient of soil reaction and ultimate soil resistance are also applied to the case of non-homogeneous soil. Lateral defection calculated using the compositive analytical method has been found to be in good agreement with values measured in field and model load tests.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.367-380
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• 2013

In this paper, an analytical threshold voltage model is developed for a short-channel double-material-gate (DMG) strained-silicon (s-Si) on silicon-germanium ($Si_{1-X}Ge_X$) MOSFET structure. The proposed threshold voltage model is based on the so called virtual-cathode potential formulation. The virtual-cathode potential is taken as minimum channel potential along the transverse direction of the channel and is derived from two-dimensional (2D) potential distribution of channel region. The 2D channel potential is formulated by solving the 2D Poisson's equation with suitable boundary conditions in both the strained-Si layer and relaxed $Si_{1-X}Ge_X$ layer. The effects of a number of device parameters like the Ge mole fraction, Si film thickness and gate-length ratio have been considered on threshold voltage. Further, the drain induced barrier lowering (DIBL) has also been analyzed for gate-length ratio and amount of strain variations. The validity of the present 2D analytical model is verified with ATLAS$^{TM}$, a 2D device simulator from Silvaco Inc.

• Journal of Power Electronics
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• v.12 no.6
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• pp.960-973
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• 2012

The winding loss analysis of a flyback transformer is difficult and ambiguous because the primary side current and the secondary side current differs both in shape and phase, especially for DCM (Discontinuous Conduction Mode) operation. Meanwhile, the fringing field caused by the air gaps further makes the traditional 1-D loss analysis model not directly applicable. The paper gives a thorough investigation into the phase shift of winding currents, which indicates that the phase shift of the high order harmonics is still close to $180^{\circ}$ out-of-phase. Based on the analysis, a simplified 2-D winding loss analytical model for flyback transformers considering the effects of low order harmonics is proposed. By neglecting the y components of the fringing field, the proposed model has an acceptable accuracy and a simple form that is similar to the conventional 1-D model. The power loss calculated with the proposed analysis model is verified by FEA (Finite Element Analysis) simulations and experimental results.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.43-50
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• 1993

Three-dimensional simulator for the ion implantation process is developed. The simulator based on an analytical model which would be a choice with high computational efficiency and accuracy. This is an important issue for the simulation of a numerous number of processing steps required in the fabrication of ULSI or GSI. The model can explain scattering and bulk channeling mechanism (1D). It can also explain depth dependent lateral diffusion effect(2D) and mask effect(3D). The model is consist of one-dimensional JPD(Joined Pearson Distribution) function and two-dimensional modified Gaussian functions. Final implanted profiles under typical mask structures such as hole, line and island structure are obtained with varying ion species.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.24 no.6
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• pp.617-627
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• 2011

This paper presents the results of analytical simulation of shake-table responses of a 1:5 scale 10-story reinforcement concrete(RC) residential building model by using the PERFORM-3D program. The following conclusion are drawn based on the observation of correlation between experiment and analysis; (1) The analytical model simulated fairly well the global elastic behavior under the excitations representative of the earthquake with the return period of 50 years. Under the design earthquake(DE) and maximum considered earthquake(MCE), this model shows the nonlinear behavior, but does not properly simulate the maximum responses, and stiffness and strength degradation in experiment. The main reason is considered to be the assumption of elastic slab. (2) Although the analytical model in the elastic behavior closely simulated the global behavior, there were considerable differences in the distribution of resistance from the wall portions. (3) Under the MCE, the shear deformation of wall was relatively well simulated with the flexural deformation being overestimated by 10 times that of experiment. This overestimation is presumed to be partially due to the neglection of coupling beams in modeling.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.38 no.6
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• pp.401-415
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• 1989

A simple but accurate analytical model for the lateral channel electric field in gate-offset structured Lightly Doped Drain MOSFET has been developed. Our model assumes Gaussian doping profile, rather than simple uniform doping, for the lightly doped region and our model can be applied to LDD structures where the junction depth of LDD is not identical to the heavily doped drain. The validity of our model has been proved by comparing our analytical results with two dimensional device simulations. Due to its simplicity, our model gives a better understanding of the mechanisms involved in reducing the electric field in the LDD MOSFET. The model shows clearly the dependencies of the lateral channel electric field on the drain and gate bias conditions and process, design parameters. Advantages of our analytical model over costly 2-D device simulations is to identify the effects of various parameters, such as oxide thickness, junction depth, gate/drain bias, the length and doping concentration of the lightly doped region, on the peak electric field that causes hot-electron pohenomena, individually. Our model can also find the optimum doping concentration of LDD which minimizes the peak electric field and hot-electron effects.