• Journal of international Conference on Electrical Machines and Systems
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• 제1권2호
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• pp.10-17
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• 2012

This paper presents an improved iron loss model, for the computation of the no load iron loss in the stator core of the in-wheel permanent magnet synchronous motors (PMSM), for the cases of with and without stator skew. 2-D analytical model is used for the computation of tooth and yoke flux densities of the in-wheel PMSM. The no load iron loss computed by the improved iron loss model, for the cases of with and without skew is compared with the finite element method (FEM) and the results show good consistency.

• 한국도로학회논문집
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• 제19권4호
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• pp.19-25
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• 2017

PURPOSES : In this paper, the flow of construction material was simulated using computational fluid dynamics in a 2D axisymmetric condition to evaluate the effect of initial or varying material properties on the final shape of a specimen. METHODS : The CFD model was verified by using a well-known analytical solution for a given test condition followed by performing a sensitivity analysis to evaluate the effect of material properties on the final shape of material. Varying dynamic viscosity and yield stress were also considered. RESULTS : The CFD model in a 2D axisymmetric condition agreed with the analytical solution for most yield stress conditions. Minor disagreements observed at high yield stress conditions indicate improper application of the pure shear assumption for the given material behavior. It was also observed that the variation of yield stress and dynamic viscosity during curing had a meaningful effect on the final shape of the specimen. CONCLUSIONS : It is concluded that CFD modeling in a 2D axisymmetric condition is good enough to evaluate fluidal characteristics of material. The model is able to consider varying yield stress and viscosity during curing. The 3D CFD-DEM coupled model may be required to consider the interaction of aggregates in fluid.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권1호
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• pp.40-50
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• 2011

A two-dimensional (2D) analytical model for the potential distribution and threshold voltage of short-channel ion-implanted GaAs MESFETs operating in the sub-threshold regime has been presented. A double-integrable Gaussian-like function has been assumed as the doping distribution profile in the vertical direction of the channel. The Schottky gate has been assumed to be semi-transparent through which optical radiation is coupled into the device. The 2D potential distribution in the channel of the short-channel device has been obtained by solving the 2D Poisson's equation by using suitable boundary conditions. The effects of excess carrier generation due to the incident optical radiation in channel region have been included in the Poisson's equation to study the optical effects on the device. The potential function has been utilized to model the threshold voltage of the device under dark and illuminated conditions. The proposed model has been verified by comparing the theoretically predicted results with simulated data obtained by using the commercially available $ATLAS^{TM}$ 2D device simulator.

• Journal of Electrical Engineering and Technology
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• 제13권4호
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• pp.1586-1595
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• 2018

For the problem that the complexity of 3-D modeling and multi parameter optimization, as well as the uncertainty of the winding factor of axial flux permanent magnet generator with coreless windings. The complex 3-D model was simplified into 2-D analytic model, and an analytical formula for the winding factor that adapting different coreless stator winding is proposed in this paper. The analytical solution for air-gap magnetic fields, no-load back EMF, electromagnetic torque, and efficiency are calculated by using this method. The multiple objective and multivariable optimization of the maximum fundamental and the minimum harmonic content of back EMF are performed by using response surface methodology. The proposed optimum design method was applied to make a generator. The generator was tested and the calculated results are compared with the proposed method, which show good agreements.

• 한국지반공학회논문집
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• 제16권4호
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• pp.5-16
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• 2000

본 연구에서는 지금까지 수행한 일련의 결과들에 근거한 지반력 계수와 극한 지반반력을 역해석적 방법으로 결정하고 이를 이용하여 비균질 지반에서의 비선형 수평거동을 예측할 수 있는 해석기법을 제안하고자 함이 목적이다. Chang이 제안한 해석기법은 비균질 지반의 비선형적인 거동을 예측하기에는 어려움이 있다. 이에 본 연구에서는 말뚝의 비선형 거동 예측을 위하여 Chang 모델에 p - y 곡선을 적용하는 복합적인 해석기법을 제안하고 해석 프로그램을 개발하였다. 그리고 본 해석기법의 적용성 검증을 위하여 모형실험 및 현장실험 결과와 상용 프로그램인 Pentagon2D을 이용한 해석 결과와 비교 검토하였다. 해석상에 이용한 지반반력 계수와 극한 지반반력은 균질지반에서 결정된 값을 비균질 지반에 적용하였으며, 본 해석기법에 의한 거동 예측결과는 모형실험 결과와 잘 일치하였다. 또한 현장실험과의 비교에서도 정도 높은 일치성을 보였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권4호
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• pp.367-380
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• 2013

In this paper, an analytical threshold voltage model is developed for a short-channel double-material-gate (DMG) strained-silicon (s-Si) on silicon-germanium ($Si_{1-X}Ge_X$) MOSFET structure. The proposed threshold voltage model is based on the so called virtual-cathode potential formulation. The virtual-cathode potential is taken as minimum channel potential along the transverse direction of the channel and is derived from two-dimensional (2D) potential distribution of channel region. The 2D channel potential is formulated by solving the 2D Poisson's equation with suitable boundary conditions in both the strained-Si layer and relaxed $Si_{1-X}Ge_X$ layer. The effects of a number of device parameters like the Ge mole fraction, Si film thickness and gate-length ratio have been considered on threshold voltage. Further, the drain induced barrier lowering (DIBL) has also been analyzed for gate-length ratio and amount of strain variations. The validity of the present 2D analytical model is verified with ATLAS$^{TM}$, a 2D device simulator from Silvaco Inc.

• Journal of Power Electronics
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• 제12권6호
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• pp.960-973
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• 2012

The winding loss analysis of a flyback transformer is difficult and ambiguous because the primary side current and the secondary side current differs both in shape and phase, especially for DCM (Discontinuous Conduction Mode) operation. Meanwhile, the fringing field caused by the air gaps further makes the traditional 1-D loss analysis model not directly applicable. The paper gives a thorough investigation into the phase shift of winding currents, which indicates that the phase shift of the high order harmonics is still close to $180^{\circ}$ out-of-phase. Based on the analysis, a simplified 2-D winding loss analytical model for flyback transformers considering the effects of low order harmonics is proposed. By neglecting the y components of the fringing field, the proposed model has an acceptable accuracy and a simple form that is similar to the conventional 1-D model. The power loss calculated with the proposed analysis model is verified by FEA (Finite Element Analysis) simulations and experimental results.

• 전자공학회논문지A
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• 제30A권12호
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• pp.43-50
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• 1993

Three-dimensional simulator for the ion implantation process is developed. The simulator based on an analytical model which would be a choice with high computational efficiency and accuracy. This is an important issue for the simulation of a numerous number of processing steps required in the fabrication of ULSI or GSI. The model can explain scattering and bulk channeling mechanism (1D). It can also explain depth dependent lateral diffusion effect(2D) and mask effect(3D). The model is consist of one-dimensional JPD(Joined Pearson Distribution) function and two-dimensional modified Gaussian functions. Final implanted profiles under typical mask structures such as hole, line and island structure are obtained with varying ion species.

• 한국전산구조공학회논문집
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• 제24권6호
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• pp.617-627
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• 2011

본 논문은 기 수행된 1:5축소 10층 RC 공동주택의 지진모의 실험결과에 비추어 근래 개발된 PERFORM-3D를 이용하여 해석적 모사를 시도하였다. 해석과 실험의 상관관계 분석에 의해 다음과 같은 결론을 얻었다. (1) 재현주기 50년 지진에 대해 실험과 해석이 매우 유사한 탄성거동을 보였다. 반면 우리나라의 설계지진과 최대지진에 대해서는 비선형 거동을 보이긴 하지만 실험의 최대응답과 강성 및 강도 저하를 제대로 모사하지 못하였다. 이의 주된 이유는 슬라브 거동을 탄성으로 가정하였기 때문이라고 판단된다. (2) 탄성영역 거동에 대해 해석모델이 전체 거동을 비교적 잘 모사하는 반면, 벽체 상호간에 걸친 힘의 분포에 있어서 실험과 상당한 차이를 보여주었다. (3) 최대지진에서 벽체의 전단변형은 비교적 잘 모사한 반면 휨변형의 경우 10배정도 과장되었다. 이는 일부 해석모델에서 인방보를 무시한 결과로 추정된다.

• 대한전기학회논문지
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• 제38권6호
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• pp.401-415
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• 1989

A simple but accurate analytical model for the lateral channel electric field in gate-offset structured Lightly Doped Drain MOSFET has been developed. Our model assumes Gaussian doping profile, rather than simple uniform doping, for the lightly doped region and our model can be applied to LDD structures where the junction depth of LDD is not identical to the heavily doped drain. The validity of our model has been proved by comparing our analytical results with two dimensional device simulations. Due to its simplicity, our model gives a better understanding of the mechanisms involved in reducing the electric field in the LDD MOSFET. The model shows clearly the dependencies of the lateral channel electric field on the drain and gate bias conditions and process, design parameters. Advantages of our analytical model over costly 2-D device simulations is to identify the effects of various parameters, such as oxide thickness, junction depth, gate/drain bias, the length and doping concentration of the lightly doped region, on the peak electric field that causes hot-electron pohenomena, individually. Our model can also find the optimum doping concentration of LDD which minimizes the peak electric field and hot-electron effects.