• Journal of Advanced Navigation Technology
• /
• v.24 no.2
• /
• pp.142-147
• /
• 2020

In the present study, we proposed newly a CPW-fed miniaturized folded-slot antenna with open ended slot for WCDMA (1.92 ~ 2.17 GHz) band. Open-ended slots and asymmetric ground plane are used for a miniaturization of the antenna, and the proposed antenna was designed and fabricated on a FR-4 substrate with dielectric constant 4.3, thickness of 1.6 mm, and size of 35×70 ㎟. The measured impedance bandwidths (|S₁₁| ≤ -10 dB) of fabricated antenna is about 400 MHz (1.86 ~ 2.26 GHz), which sufficiently satisfied interested band. Furthermore, the gain of antenna is 2 dBi and this antenna shows a similar radiation patterns of the dipole antenna. Therefore, it is expected to be used usefully in wireless and mobile communication device.

• Transactions on Electrical and Electronic Materials
• /
• v.17 no.2
• /
• pp.92-97
• /
• 2016

This paper presents design and simulation of wide band RF microswitch that uses electrostatic actuation for its operation. RF MEMS devices exhibit superior high frequency performance in comparison to conventional devices. Similar techniques that are used in Very Large Scale Integration (VLSI) can be employed to design and fabricate MEMS devices and traditional batch-processing methods can be used for its manufacturing. The proposed switch presents a novel design approach to handle reliability concerns in MEMS switches like dielectric charging effect, micro welding and stiction. The shape has been optimized at actuation voltage of 14-16 V. The switch has an improved restoring force of 20.8 μN. The design of the proposed switch is very elemental and primarily composed of electrostatic actuator, a bridge membrane and coplanar waveguide which are suspended over the substrate. The simple design of the switch makes it easy for fabrication. Typical insertion and isolation of the switch at 1 GHz is -0.03 dB and -71 dB and at 85 GHz it is -0.24 dB and -29.8 dB respectively. The isolation remains more than - 20 db even after 120 GHz. To our knowledge this is the first demonstration of a metal contact switch that shows such a high and sustained isolation and performance at W-band frequencies with an excellent figure-of merit (fc=1/2.pi.Ron.Cu =1,900 GHz). This figure of merit is significantly greater than electronic switching devices. The switch would find extensive application in wideband operations and areas where reliability is a major concern.

• Journal of KIISE:Information Networking
• /
• v.37 no.3
• /
• pp.217-227
• /
• 2010

To apply active RFID technology in the various kinds of industry, it needs to quickly transmit a large amount of data. ISO/IEC 18000-7 standard uses the 433.92MHz as single channel system and its transmit rate is just 27.8kbps, that is insufficient for a large amount of data transmission. To solve this problem, we designed a new data transmission protocol using 2.4GHz band. The feature of designed protocol is not only making over 255bytes data messages using the Burst Read UDB but also efficiently transmitting it. To implement this protocol, we use Texas Instruments's SmartRF04 develop kit and CC2500 transceiver as RF module. As an evaluation of 63.75kbytes data transmission, we demonstrate that transmission time of Burst Read UDB has improved as 17.95% faster than that of Read UDB in the ISO/IEC 18000-7.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.8
• /
• pp.823-829
• /
• 2004

In this paper, non-self-aligned SiGe HBTs with ${f}_\tau$ and${f}_max $above 50 GHz have been fabricated using an RPCVD(Reduced Pressure Chemical Vapor Deposition) system for wireless applications. In the proposed structure, in-situ boron doped selective epitaxial growth(BDSEG) and TiSi$_2$ were used for the base electrode to reduce base resistance and in-situ phosphorus doped polysilicon was used for the emitter electrode to reduce emitter resistance. SiGe base profiles and collector design methodology to increase ${f}_\tau$ and${f}_max $ are discussed in detail. Two SiGe HBTs with the collector-emitter breakdown voltages ${BV}_CEO$ of 3 V and 6 V were fabricated using SIC(selective ion-implanted collector) implantation. Fabricated SiGe HBTs have a current gain of 265 ∼ 285 and Early voltage of 102 ∼ 120 V, respectively. For the $1\times{8}_\mu{m}^2$ emitter, a SiGe HBT with ${BV}_CEO$= 6 V shows a cut-off frequency, ${f}_\tau$of 24.3 GHz and a maximum oscillation frequency, ${f}_max $of 47.6 GHz at $I_c$of 3.7 mA and$V_CE$ of 4 V. A SiGe HBT with ${BV}_CEO$ = 3 V shows ${f}_\tau$of 50.8 GHz and ${f}_max $ of 52.2 GHz at $I_c$ of 14.7 mA and $V_CE$ of 2 V.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.42 no.3 s.333
• /
• pp.33-38
• /
• 2005

In this paper, we have designed and fabricated a hybrid ring coupler to prove the fabrication possibility of various passive components, applying millimeter wave using newly proposed transmission lines, i.e. BAMLs. The characteristics of the fabricated hybrid ing coupler were a the S31(coupling) of 3.58 dB, the S21(thru) of 3.31 dB at the 60 GHz center frequency, the S11(return loss) over 16.17 dB, S41(isolation) over 55 dB at 61 GHz, and the phase difference between port 2 and port 3 of $180{\pm}loat$ 60GHz. In order to reduce the size of hybrid ring coupler, we designed the hybrid ring coupler which inserts a slow wave structure. With this structure, we were able to reduce the hybrid ring coupler by $33\%$ area.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.5
• /
• pp.49-54
• /
• 2009

This paper describes implementation of the 1.9GHz RF frequency synthesizer with $0.18{\mu}m$ silicon CMOS technology being used as an application of the USN sensor node transceiver modules. To get good performance of speed and noise, design of the each module like VCO, prescaler, 1/N divider, fractional divider with ${\Sigma }-{\Delta}$ modulator, and common circuits of the PLL has been optimized. Especially to get good performance of speed, power consumption, and wide tuning range, N-P MOS core structure has been used in design of the VCO. The chip area including pads for testing is $1.2{\times}0.7mm^2$, and the chip area only core for IP in SoC is $1.1{\times}0.4mm^2$. The test results show that there is no special spurs except -63.06dB of the 6MHz reference spurs in the PLL circuitry. There is good phase noise performance like -116.17dBc/Hz in 1MHz offset frequency.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.40 no.9
• /
• pp.384-391
• /
• 2003

The wideband annular ring slot antenna with concentric radiating structure and low impedance feedline has been presented. This antenna has been analyzed in compensation for FR-4 substrate with relative permittivity 4.3 and thickness 1 mm. As the measured 10 dB impedance bandwidth of the proposed antenna is 127.2%(2.17∼9.76 GHz), its bandwidth is much broader than maximum 82% bandwidth of a conventional annular ring slot antenna. Experimental results from 2 to 10 GHz are shown to be in good agreement with the simulation. And this antenna has a high gain above 4 dBi from 2 GHz to 10 GHz as well as a 24% size reduction and 42% area reduction than a circular slot antenna.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.51 no.11
• /
• pp.107-113
• /
• 2014

A VCO (Voltage Controlled Oscillator) and a divide-by-4 high speed frequency divider are implemented using 65nm CMOS technology for 60GHz wireless communication system. The mm-wave VCO was designed by NMOS cross-coupled LC type using current source. The architecture of the divide-by-4 high speed frequency divider is differential ILFD (Injection Locking Frequency Divider) with varactor to control frequency range. The frequency divider also uses current sources to get good phase noise characteristics. The measured results show that the VCO has 64.36~67.68GHz tuning range and the frequency divider divides the VCO output by 4 exactly. The high output power of 5.47~5.97dBm from the frequency divider is measured. The phase noise of the VCO including the frequency divider are -77.17dBc/Hz at 1MHz and -110.83dBc/Hz at 10MHz offset frequency. The power consumption including VCO is 38.4mW with 1.2V supply voltage.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.21 no.2
• /
• pp.245-251
• /
• 2017

The proposed variable pawer divider in this paper is composed of one equal power 2-way Wilkinson power divider, two variable phase shifters with 90-degree phase variation to be connected two output paths of the 2-way power divider, and one branchline coupler to combine output signals of two variable phase shifter. The proposed variable power divider can theoretically have an arbitrary power division ratio ranging from ${\infty}:1$ to ${\infty}:1$ due to 90-degrees phase variation of two phase shifter. The proposed power divider circuit fabricates on laminated TLX-9(h=20 mil, er=2.5; Taconic) with a center frequency of 1.7 GHz. The power division ratio of the fabricated prototype varies from about 1:100 to 200:1, with an input reflection characteristic(S11) of below -16 dB, an insertion loss of about -1.0 dB, and an isolation characteristic of below -17 dB between two output ports in the range 1.65-1.75 GHz.

• The Bulletin of The Korean Astronomical Society
• /
• v.41 no.2
• /
• pp.33.1-33.1
• /
• 2016

We report detection of short-term flux variability in multi-epoch observations and intraday variability in polarized emission at millimeter-wavelength from S5 0716+714 using Korean VLBI Network (KVN) radio telescopes. Over the whole observation epochs, the source shows significant inter-month variations at K- and Q-band with modulation indices of 19% at K-band and 36% at Q-band. In each epoch, the source shows monotonic flux increase in Epoch 1 and 3, and monotonic flux decrease in Epoch 2 and 4. We found an inverted spectrum with mean spectral indices of -0.57 in Epoch 1 and -0.15 in Epoch. On the contrary, we found relatively steep indices of 0.24 and 0.17 in Epoch 2 and Epoch 4, respectively. In the study of intraday variability of polarization, we found significant variations in the degree of linear polarization at 86 GHz, and in polarization angle at 43 and 86 GHz during ~10 h. The spectrum of the source is quite flat with spectral indices of -0.07 to 0.07 at 22-43 GHz and -0.23 to 0.04 at 43-86 GHz. The measured degree of the linear polarization ranges from 2.3% to 3.3 % at 22 GHz, from 0.9% to 2.2 % at 43 GHz and from 0.4 % to 4.0 % at 86 GHz, yielding prominent variations at 86 GHz over 4-5 h. The linear polarization angle is in the range of 4 to $12^{\circ}$ at 22 GHz, -39 to $81^{\circ}$ at 43 GHz, and 66 to 119 at 86 GHz with a maximum rotation of $110^{\circ}$ at 43 GHz over ~4 h. We estimated the Faraday rotation measures (RM) ranging from -9200 to 6300 rad m-2 between 22 and 43 GHz, and from -71000 to 7300 rad m-2 between 43 and 86 GHz, respectively. The frequency dependency of RM was investigated, yielding a mean power-law index, a, of 2.0. This implies that the polarized emission from S5 0716+714 at 22-86 GHz moves through a Faraday screen in or near the jet of the source.