• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1027-1033
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• 2013

In this work, a D-band imaging detector has been developed in a 65-nm CMOS technology for high frequency imaging application. The circuit was designed based on the resistive self-mixing of MOSFET devices. The fabricated detector exhibits a maximum responsivity of 400 V/W and minimum NEP of 100 $pW/Hz^{1/2}$ at 145 GHz. The chip size is $400{\mu}m{\times}450{\mu}m$ including the probing pads and a balun, while the core of the circuit occupies only $150{\mu}m{\times}100{\mu}m$.

• Journal of Korean Ophthalmic Optics Society
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• v.6 no.1
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• pp.107-110
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• 2001

In order to estimate the UV-A line's cut efficiency it lens, it was measured the light transmittance in the 320~400nm wavelength regions. We obtained the area to integrate the light transmittance of standard CR-39 and sample in the 320~400nm wavelength regions and established ${\alpha}$, ${\beta}$ of UV-A line's cut efficiency by contrast its area. We obtained the absolute cut efficiency ${\alpha}$ CR=0.59 value of CR-39 Lens, and if ${\alpha}$ was the absolute cut efficiency value of the lens to estimate UV-A cut effect, the relative cut efficiency ${\beta}$ was $1.69{\alpha}$. It was obtained the absolute and the relative UV exclusion index through each $a=(1-{\alpha}){\times}100%$, $b=(1-{\beta}){\times}100%$.

• Korean Journal of Optics and Photonics
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• v.26 no.5
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• pp.255-260
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• 2015

We have fabricated an optoacoustic ultrasound generator based on nanostructured germanium (Ge). Ge thin films were deposited via e-beam evaporation and then etched using a metal-assisted chemical (MAC) method to form nanostructured Ge films. The measured intensity of ultrasound from the nanostructured Ge covered with PDMS was about 3 times stronger than that of 100-nm-thick chromium (Cr). When the nanostructured Ge was embedded in the PDMS, the intensity of ultrasound became 8.5 times as strong compared to the 100-nm-thick Cr.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.10a
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• pp.749-751
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• 2009

Optical link design technique for compensating of distorted 40 Gbps ${\times}$ 24 channels WDM signals is researched. The considered optical link consists of optical phase conjugator (OPC) placed at 100 km and 900 km, which are non-midway of total transmission distance, and dispersion management (DM). It is confirmed that optimal net residual dispersions (NRD) are 800 ps/nm and 900 ps/nm when OPC placed at 100 km and 900 km, respectively.

• Journal of IKEEE
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• v.23 no.2
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• pp.375-379
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• 2019

$ZnO-SnO_2(ZTO)$ was deposited by RF magnetron sputtering using a ceramic target whose Zn atomic ratio to Sn is 2:1 as a target, and the crystal structure variation with thermal treats was investigated. Transparent thin film transistors (TTFT) were fabricated using the ZTO films as active layers. About 100 nm-thick $Si_3N_4$ film grown on 100 nm-thick $SiO_2$ film was adopted as gate dielectrics. The mobility, threshold voltage, $I_{on}/I_{off}$, and interface trap density were obtained from the transfer characteristics of ZTO TTFTs. The effects of substrate temperature, and post-annealing on the property variation of ZTO TTFT were analyzed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.35-37
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• 2005

100, 200nm 크기의 colloidal silica 각각에 나노 ceria 입자를 수열합성법으로 코팅하였다. Colloidal silica 입자에 ceria를 코팅 시 slurry의 pH조절과 수열처리에 이용하여 silica에 ceria가 코팅됨을 TEM과 zeta-potential을 이용하여 확인하였다. 연마 슬러리의 분산 안정성과 연마효율을 높이기 위하여 슬러리의 pH 는 9로 하였으며, 이때의 zeta-potential 값은 -25 mV이었다. 1 wt%로 제조된 연마슬러리를 이용하여, 4 inch $SiO_2$, $Si_3N_4$ wafer를 압력변화에 따른 연마특성을 관찰 하였다. Ceria coated colloidal silica 100 nm, 200 nm와 commercial한 $CeO_2$입자를 연마압력 6 psi로 oxide film을 연마한 결과 연마율이 각각 2490 ${\AA}/min$, 4200 ${\AA}/min$, 4300 ${\AA}/min$으로 측정되었다. 또한 $SiO_2$, $Si_3N_4$ film의 6 psi압력에서 ceria coated colloidal silica 100 nm, 200 nm와 commercial 한 $CeO_2$입자의 선택비는 3, 3.8, 6.7 이었다. 입자크기가 클수록 연마율이 높으며, Preston equation을 따라 연마 압력과 연마율이 비례하였다.

• Korean Journal of Optics and Photonics
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• v.9 no.3
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• pp.181-185
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• 1998

Gain characteristic of concatenated erbium-doped fiber amplifiers(EDFA) are studied with a recirculating EDFA loop. For a non-flat gain EDFA, the 3 dB gain bandwidth was reduced to 6 nm after the 20th EDFA. However, for an optimized gain flattened EDFA, in a simple configuration, the 5 dB gain bandwidth was found to be 9nm, even after the 100th EDFA, corresponding to 8000km transmission. This results suggest that the simple optimized flat gain amplifier could be a good candidate for ultra-long distance wavelength division multiplexed transmissions.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.79-79
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• 1999

The varous techniques for fabrication of si or metal tip as a field emission electron source have been reported due to great potential capabilities of flat panel display application. In this report, 240nm thermal oxide was initially grown at the p-type (100) (5-25 ohm-cm) 4 inch Si wafer and 310nm Si3N4 thin layer was deposited using low pressure chemical vapor deposition technique(LPCVD). The 2 micron size dot array was photolithographically patterned. The KOH anisotropic etching of the silicon substrate was utilized to provide V-groove formation. After formation of the V-groove shape, dry oxidation at 100$0^{\circ}C$ for 600 minutes was followed. In this procedure, the orientation dependent oxide growth was performed to have a etch-mask for dry etching. The thicknesses of the grown oxides on the (111) surface and on the (100) etch stop surface were found to be ~330nm and ~90nm, respectively. The reactive ion etching by 100 watt, 9 mtorr, 40 sccm Cl2 feed gas using inductively coupled plasma (ICP) system was performed in order to etch ~90nm SiO layer on the bottom of the etch stop and to etch the Si layer on the bottom. The 300 watt RF power was connected to the substrate in order to supply ~(-500)eV. The negative ion energy would enhance the directional anisotropic etching of the Cl2 RIE. After etching, remaining thickness of the oxide on the (111) was measured to be ~130nm by scanning electron microscopy.

• Journal of the Korean Ceramic Society
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• v.40 no.7
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• pp.709-714
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• 2003

Eu doped $Y_2$ $O_3$ nanoparticles were prepared with the solvothermal synthesis using the ethyleneglycol solvent at 20$0^{\circ}C$ for 3-5 h and then annealed in air at 1000-140$0^{\circ}C$ for 2-4 h. The X-ray diffraction pattern of annealed crystals at 100$0^{\circ}C$ for 2 h could be indexed as pure cubic cell of $Y_2$ $O_3$ phase with lattice parameters a=10.5856 $\AA$ which is very close to the reported data (JCPDS Card File, 41-1105 a=10.6041 $\AA$). Average size of prepared phosphor particles have about 100 nm, which were spherical morphology. The phosphor particle sizes decreased and the emission intensity increased at the annealing temperature. Though PL spectrum analysis, the 3% Eu doped $Y_{2-x}$ $O_3$:E $u_{x}$ $^{3+}$(x=0.06) phosphor showed the excitation spectrum at 250 nm wavelength and the maximum emission spectrum at 611 nm wavelength.

• Journal of the Korean Recycled Construction Resources Institute
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• v.6 no.1
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• pp.95-102
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• 2011

Vicker's hardness and pore size distribution of mortar adhered to the recycled coarse aggregate were tested according to the strength level of original concrete of recycled coarse aggregate to find the change of mortar adhered to the recycled coarse aggregate in cement paste. The strength levels of original concrete of recycled coarse aggregate were 25.5MPa, 41.7MPa and 60.1MPa and the aggregates were used at the state of saturated surface dry condition and oven dry condition. The results of this experimentation indicated that the mean value of Vicker's hardness was increased according to age and strength of original concrete of recycled aggregate. Porosity of $100nm{\sim}10{\mu}m$ size was reduced and porosity of 6nm~100nm size was increased in cement paste.