• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.6
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• pp.1053-1058
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• 2021

This paper presents the multi-band mixer which converts a X-, K- and Ka-band adaptively by adjusting the gate-bias voltage of an active device. The proposed mixer presented a conversion loss of -10 dB at -0.8 V gate-bias voltage for X-band, a conversion loss of -9 dB at -0.3 V gate-bias voltage for K-band and for Ka-band, a conversion loss of -7 dB at -0.2 V gate-bias voltage under the LO power of +6.0 dBm. The 1dB compression point (P1dB) is +0.5 dBm for all band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.6
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• pp.890-898
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• 2001

4H-SiC(silicon carbide) MESFET large signal model was studied using modified Materka-Kacprzak large signal MESFET model. 4H-SiC MESFET device simulation have been conducted by Silvaco\`s 2D device simulator, ATLAS. The result is modeled using modified Materka large signal model. simulation and modeling results are -8 V pinch off voltage, under V$\_$GS/=0 V, V$\_$DS/=25 V conditions, I$\_$DSS/=270 mA/mm, G$\_$m/=52.8 ms/mm were obtained. Through the power simulation 2 GHz, at the bias of V$\_$GS/-4 V md V$\_$DS/=25 V, 10 dB Gain, 34 dBm (1dB compression point)output porter, 7.6 W/mm power density, 37% PAE(power added efficiency) were obtained.7.6 W/mm power density, 37% PAE(power added efficiency) were obtained.d.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.1
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• pp.53-61
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• 2014

In this paper, we present the design, fabrication and measurement of high efficiency GaN HEMT power amplifier using harmonic matching technique. In order to achieve high efficiency, harmonic load-pull simulation is performed, that is, the optimum load impedances are determined at $2^{nd}$ and $3^{rd}$ harmonic frequencies as well as at the fundamental. Then, the output matching circuit is designed based on harmonic load-pull simulation. The measurement of the fabricated power amplifier shows the linear gain of 20 dB and $P_{1dB}$(1 dB gain compression point) of 33.7 dBm at 1.85 GHz. The maximum power added efficiency(PAE) of 80.9 % is achieved at the output power of 38.6 dBm, which belongs to best efficiency performance among the reported high efficiency power amplifiers. For W-CDMA input signal, the power amplifier shows a PAE of 27.8 % at the average output power of 28.4 dBm, where an ACLR (Adjacent Channel Leakage Ratio) is measured to be -38.8 dBc. Digital predistortion using polynomial fitting was implemented to linearize the power amplifiers, which allowed about 6.2 dB improvement of an ACLR performance.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.3A
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• pp.356-359
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• 2006

A monolithic SiGe HBT variable gain driver amplifier(VGDA) with high dB-linear gain control and high linearity has been developed as a driver amplifier with ground-shielded microstrip lines for 5-GHz transmitters. The VGDA consists of three blocks such as the cascode gain-control stage, fixed-gain output stage, and voltage control block. The circuit elements were optimized by using the Agilent Technologies' ADSs. The VGDA was implemented in STMicroelectronics' 0.35${\mu}m$ Si-BiCMOS process. The VGDA exhibits a dynamic gain control range of 34 dB with the control voltage range from 0 to 2.3 V in 5.15-5.35 GHz band. At 5.15 GHz, maximum gain and attenuation are 10.5 dB and -23.6 dB, respectively. The amplifier also produces a 1-dB gain-compression output power of -3 dBm and output third-order intercept point of 7.5 dBm. Input/output voltage standing wave ratios of the VGDA keep low and constant despite change in the gain-control voltage.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.1
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• pp.99-106
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• 2001

In this paper, an 1-Watt amplifier for IMT-2000 was designed and fabricated using feedfarward method which has the highest linearity and wide bandwidth. Since feedforward is sensitive to surroundings for example heat, input power level, time and so on, adaptive controller using micro controller is adopted. We fabricated a HPA with 35 dB gain, 40 dBm of 1-dB compression point, and utilized variable attenuator and variable phase shifter using reflection type to cancel loop signal. From the measured results, the fo11owing facts were obtained, in signal loop, main carrier over 35 dB was suppressed and error signal over 30 dB is cancelled in error loop, IMD characteristics above 60 dBc were obtained.

• Design & Manufacturing
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• v.16 no.2
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• pp.1-6
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• 2022

As environmental regulations are strengthened, automobile manufacturers continuously research lightweight structures based on carbon fiber reinforced plastic (CFRP). However, it is difficult to see the effect of strength reinforcement when using a single CFRP material. To improve this, a hybrid laminate in which CFRP is mixed with the existing body structural steel was proposed. In this paper, CFRP patch reinforcement is applied to each compression/tensile action surface of a 22MnB5 metal sheet, and it was evaluated through a 3-point bending experiment. Progressive failure was observed in similar deflection on bending deformation to each one-sided reinforced specimen. After progressive failure, the tensile reinforced specimen was confirmed to separate the damaged CFRP patch and 22MnB5 sheet from the center of the flexure. The compression reinforced specimen didn't separate that CFRP patch and 22MnB5, and the strength reinforcement behavior was confirmed. In the compression reinforced specimen, damaged CFRP patches were observed at the center of flexure during bending deformation. As a result of checking the specimen of the compression reinforcement specimen with an optical microscope, It is confirmed that the damaged CFRP patch and the reinforced CFRP patch overlapped, resulting in a concentrated load. Through the experimental results, the 22MnB5 strength reinforcement characteristics according to the reinforcement position of the CFRP patch were confirmed.

• ETRI Journal
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• v.42 no.5
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• pp.773-780
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• 2020

A 40 nm complementary metal oxide semiconductor carrier-aggregated drive amplifier with high linearity is presented for sub-GHz Internet of Things applications. The proposed drive amplifier consists of two high linear amplifiers, which are composed of five differential cascode cells. Carrier aggregation can be achieved by switching on both the driver amplifiers simultaneously and combining the two independent signals in the current mode. The common gate bias of the cascode cells is selected to maximize the output 1 dB compression point (P1dB) to support high-linear wideband applications, and is used for the local supply voltage of digital circuitry for gain control. The proposed circuit achieved an output P1dB of 10.7 dBm with over 22.8 dBm of output 3rd-order intercept point up to 0.9 GHz and demonstrated a 55 dBc adjacent channel leakage ratio (ACLR) for the 802.11af with -5 dBm channel power. To the best of our knowledge, this is the first demonstration of the wideband carrier-aggregated drive amplifier that achieves the highest ACLR performance.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.5
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• pp.920-927
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• 1994

A development of an efficient 14.0~14.5GHz 3 Watt SSPA is described in this paper, which is applicable to the very small aperture terminal(VSAT) for bidirectional data and voice signal transmission in low cost and with small size. The SSPA consists of two stages of low noise amplifiers using the low noise GaAs FETs. two stages of medium power amplifiers using the medium power GaAs FETs, and three stages of power amplifiers including a balanced amplifier using an internally matched power GaAs FET. The achieved with this seven stage amplifiers are 42dB signal power gain, 7dB noise figure, 35dBm output power at 1dB gain compression point and 2.0 and 1.5 input and output VSWR respectively.

• Journal of the Korean Society of Clothing and Textiles
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• v.14 no.1 s.33
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• pp.44-54
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• 1990

The purpose of this study was to investigate the effects of thickness of the sleeping pad on the physiological responses and the microclimate in the heating ondol room during sleeping time. The measuring points were skin temp., weight loss and body movement as physiological responses and the compression ratio, the temp. on/under the sleeping pad, the inside limp. of the sleeping quilts and subjective sence while 7 hours sleeping. Thickness of sleeping pads was 27.2 mm(A), 34.8 mm (B), 47.9 mm(C) used for 90 days and no used pad 60.7 mm(D). The floor surface temp. was keeping $29{\pm}1^{\circ}C$ while the environmental conditions was at $23{\pm}1^{\circ}C$ ($50{\pm}5\%$ R.H.) The results were as followings; 1) The mean compression ratio after using the sleeping pads for 45 days was about $70\%$ , and it wasn't increased any more thereafter 2) After 2 hours sleeping the temp. under the sleeping pads was shown that C and D were higher than A and B, and the temp. on the sleeping pads was shown that A and C pads were higher than B and D. But after 3-4 hours sleeping the skin temp. of legs was shown that B and D pads were higher than A and C. 3) Weight loss for C pad was significantly higher than others. Body movement and side position in tying was higher in A and C pads than B and D. 4) The inside temp. of quilt for A and C pads were higher in the early part of sleeping period than those of B and C pads and relative humidity was lower in C than others. 5) D pad was softer than others and fatigue degree was turned out to be lowest in D, the highest in A. From this point of view, we concluded that thickness of the sleeping Pad in the heating ondol room had different characteristic from that in no heating ondol room. And 35 mm used pad was turned out to be proper.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.341-346
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• 2017

In this paper, we present a 60 GHz on-off keying (OOK) modulator in a 90 nm CMOS. The modulator employs a current-reuse technique and a switching modulation for low DC power dissipation, high on/off isolation, and high data rate. The measured gain of the modulator, on/off isolation, and output 1-dB compression point is 9.1 dB, 24.3 dB, and 5.1 dBm, respectively, at 60 GHz. The modulator consumes power consumption of 18 mW, and is capable of handling data rates of 8 Gb/s at bit error rate of less than $10^{-6}$ for $231^{-1}$ PRBS over a distance of 10-cm with an OOK receiver module.