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XRD study of the layered structure compounds [Zn${(H_2O)}_6$] (${(C_{n}H_{2n+1}SO_3)}_2$ (층상구조인 [Zn${(H_2O)}_6$ (${(C_{n}H_{2n+1}SO_3)}_2$ 화합물에 대한 X-선 회절 연구)

  • 박용준;박양순;이종규;박성훈;전태현;허영덕
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.10 no.4
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    • pp.318-323
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    • 2000
  • The intercalated compounds of alkylsulfonates into hydrated zinc were synthesized. From the high temperature powder X-ray diffraction (HTXRD), FT-IR, and molecular size, the temperature dependence of orientation for the intercalated alkylsulfonates were determined. In the temperatures range 1, alkylsulfonates were intercalated into hexa aqua zinc layer with the bilayer structure of $32.9^{\circ}$angle for ${Zn(H_2O_4]^{2+}[C_nH_{2n+1}SO_3]_2\;^-$. In the temperatures range 2, alkylsulfonates were intercalated into tetra aqua zinc layer with the bilayer structure of $55.2^{\circ}$angle for ${Zn(C_nH_{2n+1}SO_3)_2$. In the temperatures range 3, alkylsulfonates were directly bonded to zinc ion with the bilayer structure of $76.5^{\circ}$angle for ${Zn(C_nH_{2n+1}SO_3)_2$.

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(n-1)/n DC-free Codes for Optical Storage Channel (광 저장장치를 위한 (n-1)/n DC-free부호에 관한 고찰)

  • 김경근;박지환
    • Proceedings of the Korea Multimedia Society Conference
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    • 2001.06a
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    • pp.274-277
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    • 2001
  • 멀티미디어 데이터 저장에 있어서 중요한 요소 중의 하나는 얼마나 많은 양의 정보를 주어진 공간에 기록할 수 있느냐는 것이다. 현재 많이 사용되고 있는 광 저장장치(optical channel) 기록을 위하여 dc-free에서 n이 홀수 일 때 부호비가 (n-1)/n인 부호에 대하여 알아보았다.

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Conditions for the Non-ergodicity of Some Markov Chains

  • Lee, Oesook
    • Journal of the Korean Statistical Society
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    • v.25 no.3
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    • pp.303-311
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    • 1996
  • We consider the discrete time randomly perturbed systems on sep-arable Banach space given by $X_{n+1};=;{Gamma}_{n+1}(X_n);+;{epsilon}_{n+1}$ where {${Gamma}_n$} is a sequence of random functions and {${epsilon}_n$} is a sequence of disturbances Sufficient conditions for non-ergodicity of {$X_n$} are obtained.

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AC Breakdown Characteristics of Pure Ar, $N_2$ Gas and Ar/$N_2$ Gas Mixutres under Uniform and Non-Uniform Fields (평등 및 불평등 전계하에서 순수 Ar, $N_2$가스와 Ar/$N_2$혼합 가스의 교류절연파괴 특성)

  • 이상우;김인식;이동인;이광식;김이국
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.15 no.5
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    • pp.20-27
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    • 2001
  • In this paper, the AC breakdown characteristics of pure Ar and $N_2$gas with gas pressure range of 58.8~137.3[kPa] under uniform and non-uniform fields were investigated, and the measured values were compared with those in Ar/$N_2$gas mixtures with pressure varying. Summarizing the experimental results, the breakdown voltages of pure $N_2$gas, under uniform and non-uniform fields, were increased about 4.8 and 1.1 times than those of pure Ar gas, and the AC breakdown voltage increased with the pressure increasing. The breakdown voltages of Ar/$N_2$ gas mixtures were decreased with decreasing the mixture ratio of $N_2$gas. In case of Ar(85%)/$N_2$(15%) and Ar(70%)/$N_2$(30%) gas mixtures comparing to the pure Ar gas, the breakdown voltages under uniform field were increased about 1.5 and 2.1 times, and under non-uniform field were increased about 1.1 and 1.3 times at the pressure of 101.3[kPa]. Also, corona inception voltage of Ar(70%)/$N_2$(30%) gas mixtures under non-uniform field were increased about 1.5 times than those of pure Ar gas.

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AN ANALOGUE OF THE HILTON-MILNER THEOREM FOR WEAK COMPOSITIONS

  • Ku, Cheng Yeaw;Wong, Kok Bin
    • Bulletin of the Korean Mathematical Society
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    • v.52 no.3
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    • pp.1007-1025
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    • 2015
  • Let $\mathbb{N}_0$ be the set of non-negative integers, and let P(n, l) denote the set of all weak compositions of n with l parts, i.e., $P(n,l)=\{(x_1,x_2,{\cdots},x_l){\in}\mathbb{N}^l_0\;:\;x_1+x_2+{\cdots}+x_l=n\}$. For any element $u=(u_1,u_2,{\cdots},u_l){\in}P(n,l)$, denote its ith-coordinate by u(i), i.e., $u(i)=u_i$. A family $A{\subseteq}P(n,l)$ is said to be t-intersecting if ${\mid}\{i:u(i)=v(i)\}{\mid}{\geq}t$ for all $u,v{\epsilon}A$. A family $A{\subseteq}P(n,l)$ is said to be trivially t-intersecting if there is a t-set T of $[l]=\{1,2,{\cdots},l\}$ and elements $y_s{\in}\mathbb{N}_0(s{\in}T)$ such that $A=\{u{\in}P(n,l):u(j)=yj\;for\;all\;j{\in}T\}$. We prove that given any positive integers l, t with $l{\geq}2t+3$, there exists a constant $n_0(l,t)$ depending only on l and t, such that for all $n{\geq}n_0(l,t)$, if $A{\subseteq}P(n,l)$ is non-trivially t-intersecting, then $${\mid}A{\mid}{\leq}(^{n+l-t-l}_{l-t-1})-(^{n-1}_{l-t-1})+t$$. Moreover, equality holds if and only if there is a t-set T of [l] such that $$A=\bigcup_{s{\in}[l]{\backslash}T}\;A_s{\cup}\{q_i:i{\in}T\}$$, where $$A_s=\{u{\in}P(n,l):u(j)=0\;for\;all\;j{\in}T\;and\;u(s)=0\}$$ and $$q_i{\in}P(n,l)\;with\;q_i(j)=0\;fo\;all\;j{\in}[l]{\backslash}\{i\}\;and\;q_i(i)=n$$.

Light Emitting Diode with Multi-step Quantum Well Structure for Sensing Applications (계단형 양자우물 구조가 적용된 센서 광원 용 발광다이오드 소자)

  • Seongmin Park;Seungjoo Lee;Jajeong Woo;Yukyung Kim;Soohwan Jang
    • Journal of Sensor Science and Technology
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    • v.32 no.6
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    • pp.441-446
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    • 2023
  • Electrical and optical characteristics of the GaN-based light-emitting diode (LED) with the improved multi-quantum well (MQW) structure have been studied for light source in bio-sensing systems. Novel GaN/In0.1GaN/In0.2GaN/In0.1GaN/GaN and Al0.1GaN/GaN/In0.2GaN/GaN/Al0.1GaN (MQW) structures were suggested, and their radiative recombination rate, light output power, electroluminescence, and external quantum efficiency were compared with those of the conventional GaN/In0.2GaN/GaN MQW structure using device simulation. The LED with the GaN/In0.1GaN/In0.2GaN/In0.1GaN/GaN MQW structure showed an excellent recombination rate of 5.57 × 1028 cm-3·s-1 that was more than one order improvement over that of the conventional LED. In addition, the efficiency droop was relieved by the suggested stepped MQW structure.

Fault Detection Architecture of the Field Multiplication Using Gaussian Normal Bases in GF(2n (가우시안 정규기저를 갖는 GF(2n)의 곱셈에 대한 오류 탐지)

  • Kim, Chang Han;Chang, Nam Su;Park, Young Ho
    • Journal of the Korea Institute of Information Security & Cryptology
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    • v.24 no.1
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    • pp.41-50
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    • 2014
  • In this paper, we proposed an error detection in Gaussian normal basis multiplier over $GF(2^n)$. It is shown that by using parity prediction, error detection can be very simply constructed in hardware. The hardware overheads are only one AND gate, n+1 XOR gates, and one 1-bit register in serial multipliers, and so n AND gates, 2n-1 XOR gates in parallel multipliers. This method are detect in odd number of bit fault in C = AB.

DIGITAL TOPOLOGICAL PROPERTY OF THE DIGITAL 8-PSEUDOTORI

  • LEE, SIK;KIM, SAM-TAE;HAN, SANG-EON
    • Honam Mathematical Journal
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    • v.26 no.4
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    • pp.411-421
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    • 2004
  • A digital $(k_0,\;k_1)$-homotopy is induced from digital $(k_0,\;k_1)$-continuity with the n kinds of $k_i$-adjacency relations in ${\mathbb{Z}}^n$, $i{\in}\{0,\;1\}$. The k-fundamental group, ${\pi}^k_1(X,\;x_0)$, is derived from the pointed digital k-homotopy, $k{\in}\{3^n-1(n{\geq}2),\;3^n-{\sum}^{r-2}_{k=0}C^n_k2^{n-k}-1(2{\leq}r{\leq}n-1(n{\geq}3)),\;2n(n{\geq}1)\}$. In this paper two kinds of digital 8-pseudotori stemmed from the minimal simple closed 4-curve and the minimal simple closed 8-curve with 8-contractibility or without 8-contractibility, e.g., $DT_8$ and $DT^{\prime}_8$, are introduced and their digital topological properties are studied by the calculation of the k-fundamental groups, $k{\in}\{8,\;32,\;64,\;80\}$.

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