• Journal of the Institute of Electronics Engineers of Korea CI
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• v.45 no.6
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• pp.87-93
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• 2008

This paper describes implementation of the 5.0GHz RF frequency synthesizer with $0.18{\mu}m$ silicon CMOS technology being used as an application of the IEEE802.15.4 USN sensor node transceiver modules. To get good performance of speed and noise, design of the each module like VCO, prescaler, 1/N divider, fractional divider with ${\Sigma}-{\Delta}$ modulator, and common circuits of the PLL has been optimized. Especially to get good performance of speed, power consumption, and wide tuning range, N-P MOS core structure has been used in design of the VCO. The chip area including pads for testing is $1.1*0.7mm^2$, and the chip area only core for IP in SoC is $1.0*0.4mm^2$. Through comparing and analysing of the designed two kind of the frequency synthesizer, we can conclude that if we improve a litter characteristics there is no problem to use their as IPs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.70-82
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• 2014

A nano-power CMOS voltage reference is proposed in this paper. Through a combination of switched-capacitor technology with the body effect in MOSFETs, the output voltage is defined as the difference between two gate-source voltages using only a single PMOS transistor operated in the subthreshold region, which has low sensitivity to the temperature and supply voltage. A low output, which breaks the threshold restriction, is produced without any subdivision of the components, and flexible trimming capability can be achieved with a composite transistor, such that the chip area is saved. The chip is implemented in $0.18{\mu}m$ standard CMOS technology. Measurements show that the output voltage is approximately 123.3 mV, the temperature coefficient is $17.6ppm/^{\circ}C$, and the line sensitivity is 0.15 %/V. When the supply voltage is 1 V, the supply current is less than 90 nA at room temperature. The area occupation is approximately $0.03mm^2$.

• Journal of electromagnetic engineering and science
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• v.14 no.1
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• pp.1-8
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• 2014

A differential-cascode CMOS power amplifier (PA) with a supply modulator for envelope tracking (ET) has been implemented by 0.18 ${\mu}m$ RF CMOS technology. The loss at the output is minimized by implementing the output transformer on a FR-4 printed circuit board (PCB). The CMOS PA utilizes the $2^{nd}$ harmonic short at the input to enhance the linearity. The measurement was done by the 10MHz bandwidth 16QAM 6.88 dB peak-to-average power ratio long-term evolution (LTE) signal at 1.85 GHz. The ET operation of the CMOS PA with the supply modulator enhances the power-added efficiency (PAE) by 2.5, to 10% over the stand-alone CMOS PA for the LTE signal. The ET PA achieves a PAE of 36.5% and an $ACLR_{E-UTRA}$ of -32.7 dBc at an average output power of 27 dBm.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.10
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• pp.169-177
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• 2012

A non-decimation second-order spatial moving average (SMA) discrete-time (DT) filter is proposed with reconfigurable null frequencies. The filter coefficients are changeable, and it can be controlled by switching sampling capacitors. So, interferers can be rejected effectively by flexible nulls. Since it operates without decimation, it does not change the sample rate and aliasing problem can be avoided. The filter is designed with variable weight of coefficients as $1:{\alpha}:1$ where ${\alpha}$ varies from 1 to 2. This corresponds to the change of null frequencies within the range of fs/3~fs/2 and fs/2~2fs/3. The proposed filter is implemented in the TSMC 0.18-${\mu}m$ CMOS process. Simulation shows that null frequencies are changeable in the range of 0.38~0.49fs and 0.51~0.62fs.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.3
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• pp.283-291
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• 2015

In this paper, a negative impedance converter, the key element of non-Foster matching to enhance the bandwidth of matching high Q-factor passive element, is presented. Proposed negative impedance converter is implemented by the topology of Linvill's transistor negative impedance converter circuit. It is hard to forecast the operation of negative impedance circuit, because it is composed of gain element and positive feedback. Therefore the negative impedance circuit is implemented by hybrid type beforehand to check out the feasibility and it is designed by integrated circuit. The integrated circuit is fabricated by commercial $0.18{\mu}m$ SiGe BiCMOS process, and non-Foster matching is observed at 700~960 MHz band by cancelling the target reactance.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.8
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• pp.53-60
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• 2009

A low-power/small-area 128-point FFT processor is designed, which is based on logarithmic number system (LNS) and some design techniques to minimize both hardware complexity and arithmetic error. The complex-number multiplications and additions/subtractions for FFT computation are implemented with LNS adders and look-up table (LUT) rather than using conventional two's complement multipliers and adders. Our design reduces the gate counts by 21% and the memory size by 16% when compared to the conventional two's complement implementation. Also, the estimated power consumption is reduced by about 18%. The LNS-based FFT processor synthesized with 0.35 ${\mu}m$ CMOS standard cell library has 39,910 gates and 2,880 bits memory. It can compute a 128-point FIT in 2.13 ${\mu}s$ with 60 MHz@2.5V, and has the average SQNR of 40.7 dB.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.8
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• pp.40-48
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• 2015

This paper presents a processor that performs QR decomposition (QRD) as well as Lattice Reduction (LR) for multiple-input multiple-output (MIMO) systems. By sharing the operations commonly required in QRD and LR, the hardware complexity of the proposed processor is reduced significantly. In addition, the proposed processor is designed based on a multi-cycle architecture so as to reduce the hardware complexity. The proposed processor is implemented with 139k logic gates in a $0.18-{\mu}m$ CMOS process, and its latency is $5{\mu}s$ for $8{\times}8$ MIMO preprocessing both QRD and LR where the operating frequency is 117MHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.8
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• pp.1068-1075
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• 2018

In this paper, a novel PLL has been proposed that reduces the size of the loop filter while suppressing spur by using a VCO with two inputs. Through the stability analysis according to the operating status, the PLL is designed to operate stably after the phase fixing. The capacitor of loop filter usually occupies larger area of PLL. It is a VCO that can reduce the size of the loop filter by increasing the effective capacitance of the capacitor through the simultaneous charge and discharge operation by two charge pumps and has two signals operating in opposite phases. The settling time of set to $80{\mu}s$ approximately by using a LSI(Locking Status Indicator) indicating the phase locking status. The proposed PLL is designed using a supply voltage of 1.8V and a $0.18{\mu}m$ CMOS process.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.1
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• pp.1-6
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• 2019

An extremely small size multi-loop phase-locked loop(PLL) keeping phase noise performances has been proposed. It has been designed to have the loop filter made of small single capacitor with multiple Frequency Voltage Converters (FVCs) because the main goal is to make the size of the proposed PLL extremely small. Multiple FVCs which are connected to voltage controlled oscillator(VCO) make multiple negative feedback loops in PLL. Those multiple negative feedback loops enable the PLL with the loop filter made of an extremely small size single capacitor operate stably. It has been designed with a 1.8V $0.18{\mu}m$ CMOS process. The simulation results show that the proposed PLL has the 1.6ps jitter and $10{\mu}s$ locking time.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.10
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• pp.2237-2246
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• 2012

A bias circuit required for an oral sensor is manufactured inside the oral sensor chip to reduce its size and cost. The proposed DC-DC converter supplies the required reference and bias currents for their corresponding regulators by using IREF of the reference current generator. Their target voltages of the voltage regulators are regulated by the negative mechanism by generating their reference voltages required for their corresponding regulators. In addition, a constant current IB0/IB1 is supplied by being mirrored by a current mirror ratio and then VREF is generated. It is confirmed by measurements that the average volatge, ${\sigma}$, and $4{\sigma}$ of the designed DC-DC converter for intra oral sensors with a $0.18{\mu}m$ X-ray CMOS process are within their required ranges. And the line-pair pattern image shows a high-resolution characteristic without blurring. Also, a good oral image can be obtained.