• Proceedings of the Korean Statistical Society Conference
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• 2005.11a
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• pp.147-152
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• 2005

본 논문에서는 k개의 포아송 확률변수가 서로 종속 되어 있는 다변량 포아송 분포를 따를 때, 주어진 분산-공분산 행렬 구조를 유지하는 다변량 포아송 확률난수 생성방법에 대해 다루었다. 특히, 확률난수를 생성하기 위해 선형방정식을 푸는 두 가지 수치해석 알고리즘을 제안하였으며, Park 등 (1996)의 다변량 베르누이 확률난수 생성에 활용된 알고리즘과의 연관성을 다루었다.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.2
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• pp.117-123
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• 2018

In this study, we suggest a fast image reconstruction scheme using Poisson equation from image gradient domain. In this approach, using the Poisson equation, a guided vector field is created by employing source and target images within a selected region at the first step. Next, the guided vector is used in generating the result image. We analyze the problem of reconstructing a two-dimensional function that approximates a set of desired gradients and a data term. The joined data and gradients are able to work like modifying the image gradients while staying close to the original image. Starting with this formulation, we have a screened Poisson equation known in physics. This equation leads to an efficient solution to the problem in FFT domain. It represents the spatial filters that solve the two-dimensional screened Poisson model and shows gradient scaling to be a well-defined sharpen filter that generalizes Laplace sharpening. We demonstrate the results using a discrete cosine transformation based this Poisson model.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.907-910
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• 1999

본 논문에서는 고 농도로 불순물이 주입된 영역에서 전자 및 정공 농도를 정교하게 구현하기 위해 Fermi-Dirac 분포함수를 고려한 포아송 방정식의 이산화 방법을 제안하였다. Fermi-Dirac 분포를 근사시키기 위해서 Least-Squares 및 점근선 근사법을 사용하였으며 Galerkin 방법을 근간으로 한 유한 요소법을 이용하여 포아송 방정식을 이산화하였다. 구현한 모델을 검증하기 위해 전력 BJT 시료를 제작하여 자체 개발된 소자 시뮬레이터인 BANDIS를 이용하여 모의 실험을 수행한 결과, 상업용 2차원 소자 시뮬레이터인 MEDICI에 비해 최대 4%이내의 상대 오차를 보였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.11
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• pp.2373-2377
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• 2009

In this paper, the threshold voltage characteristics have been analyzed using three dimensional Poisson's equation for FinFET. The FinFET is extensively been studing since it can reduce the short channel effects as the nano device. We have presented the short channel effects such as subthreshold swing and threshold voltage for PinFET, using the analytical three dimensional Poisson's equation. We have analyzed for channel length, thickness and width to consider the structural characteristics for FinFET. Using this model, the subthreshold swing and threshold voltage have been analyzed for FinFET since the potential and transport model of this analytical three dimensional Poisson's equation is verified as comparing with those of the numerical three dimensional Poisson's equation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.10a
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• pp.928-930
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• 2009

In this paper, the threshold voltage characteristics have been alanyzed using three dimensional Poisson's equation for FinFET. The FinFET is extensively been studing since it can reduce the short channel effects as the nano device. We have presented the short channel effects such as subthreshold swing and threshold voltage for FinFET, using the analytical three dimensional Poisson's equation. We have analyzed for channel length, thickness and width to consider the structural characteristics for FinFET. Using this model, the subthreshold swing and threshold voltage have been analyzed for FinFET since the potential and transport model of this analytical three dimensional Poisson's equation is verified as comparing with those of the numerical three dimensional Poisson's equation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.4
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• pp.747-752
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• 2009

Three dimensional(3D) Poisson's equation is used to calculate the potential variation for FinFET in the channel to analyze subthreshold current and short channel effect(SCE). The analytical model has been presented to lessen calculating time and understand the relationship of parameters. The accuracy of this model has been verified by the data from 3D numerical device simulator and variation for dimension parameters has been explained. The model has been developed to obtain channel potential of FinFET according to channel doping and to calculate subthreshold current and threshold voltage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.4
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• pp.617-623
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• 2018

In this paper, we propose a novel seamless video composition method based on shape matching and Poisson equation. Video composition method consists of video segmentation process and video blending process. In the video segmentation process, the user first sets a trimap for the first frame, and then performs a grab-cut algorithm. Next, considering that the performance of video segmentation may be reduced if the color, brightness and texture of the object and the background are similar, the object region segmented in the current frame is corrected through shape matching between the objects of the current frame and the previous frame. In the video blending process, the object of source video and the background of target video are blended seamlessly using Poisson equation, and the object is located according to the movement path set by the user. Simulation results show that the proposed method has better performance not only in the naturalness of the composite video but also in computational time.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.693-695
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• 2012

This paper have presented the breakdown voltage for double gate(DG) MOSFET. The analytical solution of Poisson's equation and Fulop's breakdown condition have been used to analyze for breakdown voltage. The double gate(DG) MOSFET as the device to be able to use until nano scale has the adventage to reduce the short channel effects. But we need the study for the breakdown voltage of DGMOSFET since the decrease of the breakdown voltage is unavoidable. To approximate with experimental values, we have used the Gaussian function as charge distribution for Poisson's equation, and the change of breakdown voltage has been observed for device geometry. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result to observe the breakdown voltage, the smaller channel length and the higher doping concentration become, the smaller the breakdown voltage becomes. Also we have observed the change od the breakdown voltage for gate oxide thickness and channel thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.7
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• pp.1537-1542
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• 2011

In this paper, the subthreshold characteristics have been analyzed for various oxide thickness of double gate MOSFET(DGMOSFET) using Poisson's equation with nonuniform doping distribution. The DGMOSFET is extensively been studying since it can shrink the short channel effects(SCEs) in nano device. The degradation of subthreshold swing(SS) known as SCEs has been presented using analytical for, of Poisson's equation with nonuniform doping distribution for DGMOSFET. The SS have been analyzed for, change of gate oxide thickness to be the most important structural parameters of DGMOSFET. To verify this potential and transport models of thus analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and subthreshold swing has been analyzed using this models for DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.9
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• pp.2000-2006
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• 2011

In this paper, the drain induced barrier lowering(DIBL) for doping distribution in the channel has been analyzed for double gate MOSFET(DGMOSFET). The DGMOSFET is extensively been studing because of adventages to be able to reduce the short channel effects(SCEs) to occur in convensional MOSFET. DIBL is SCE known as reduction of threshold voltage due to variation of energy band by high drain voltage. This DIBL has been analyzed for structural parameter and variation of channel doping profile for DGMOSFET. For this object, The analytical model of Poisson equation has been derived from Gaussian doping distribution for DGMOSFET. To verify potential and DIBL models based on this analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and DIBL for DGMOSFET has been investigated using this models.