• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.7B
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• pp.1081-1090
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• 2010

$0.18{\mu}m$ CMOS UHF RFID tag frontend is presented in this paper. Several key components are highlighted: the voltage multiplier based on the threshold voltage terminated circuit, the demodulator using current mode, and the clock generator. For standard compliance, all designed components are under the EPC Global Class-1 Generation-2 UHF RFID protocol. Backscatter modulation uses the pulse width modulation scheme. Overall performance of the proposed tag chip was verified with the evaluation board. Prototype Tag Chip dimension is neary 0.77mm2 ; According to the simulation results, the reader can successfully interrogate the tag within 1.5m. where the tag consumes the power about $71{\mu}W$.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.8
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• pp.38-48
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• 2014

In this paper, a design of Signal Processing Analog Front-End IC for Automotive Piezo-Resistive Type Pressure Sensor is presented. In modern society, as the car turns to go from mechanical to electronic technology, the accuracy and reliability of electronic parts required importantly. In order to improve these points, Programmable Gain Amplifier (PGA) amplifies the received signal in accordance with gain for increasing the accuracy after PRT Sensor is operated to change physical pressure signals to electrical signals. The signal amplified from PGA is processed by Digital blocks like ADC, CMC and DAC. After going through this process, it is possible to determine the electrical signal to physical pressure signal. As processing analog signal to digital signal, reliability and accuracy in Analog Front-End IC is increased. The current consumption of IC is 5.32mA. The die area of the fabricated IC is $1.94mm{\times}1.94mm$.

• Journal of Korea Society of Industrial Information Systems
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• v.18 no.5
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• pp.25-32
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• 2013

A 1.8V 2-Gb/s scalable low voltage signaling (SLVS) transmitter (TX) is designed for mobile applications requiring high speed and low power consumption. It consists of 4-lane TX for data transmission, 1-lane TX for a source synchronous clocking, and a 8-phase clock generator. The proposed SLVS TX has the scaling voltage swing from 50 mV to 650 mV and supports a high speed (HS) mode and a low power (LP) mode. An output impedance calibration scheme for the SVLS TX is proposed to improve the signal integrity. The proposed SLVS TX is implemented by using a 0.18-${\mu}m$ 1-poly 6-metal CMOS with a 1.8 V supply. The simulated data jitter of the implemented SLVS TX is about 8.04 ps at the data rate of 2-Gb/s. The area and power consumption of the 1-lane of the proposed SLVS TX are $422{\times}474{\mu}m^2$ and 5.35 mW/Gb/s, respectively.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.15 no.2
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• pp.144-151
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• 2022

In this paper, a 1.5V 256kb eFlash memory IP with low area DC-DC converter is designed for battery application. Therefore, in this paper, 5V NMOS precharging transistor is used instead of cross-coupled 5V NMOS transistor, which is a circuit that precharges the voltage of the pumping node to VIN voltage in the unit charge pump circuit for the design of a low-area DC-DC converter. A 5V cross-coupled PMOS transistor is used as a transistor that transfers the boosted voltage to the VOUT node. In addition, the gate node of the 5V NMOS precharging transistor is made to swing between VIN voltage and VIN+VDD voltage using a boost-clock generator. Furthermore, to swing the clock signal, which is one node of the pumping capacitor, to full VDD during a small ring oscillation period in the multi-stage charge pump circuit, a local inverter is added to each unit charge pump circuit. And when exiting from erase mode and program mode and staying at stand-by state, HV NMOS transistor is used to precharge to VDD voltage instead of using a circuit that precharges the boosted voltage to VDD voltage. Since the proposed circuit is applied to the DC-DC converter circuit, the layout area of the 256kb eFLASH memory IP is reduced by about 6.5% compared to the case of using the conventional DC-DC converter circuit.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 2013.06a
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• pp.138-139
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• 2013

최근 SoC의 발전으로 하나의 칩내에 많은 IP를 구현함으로써 IP간 통신을 위한 버스 시스템이 칩에 성능에 큰 요소가 되고 있다. 버스 시스템의 기존의 중계 방식으로 Fixed Priority, Round Robin, TDMA 방식 등이 있다. 하지만 기존의 중계 방식은 여러 문제점을 가지고 있다. 그중 Burst 기반의 버스에서 발생하는 문제로 하나의 우선순위가 낮은 마스터에서 중요한 데이터를 전송하는데 대기시간이 길어지는 것이 있다. 본 논문에서는 위의 문제점을 해결하기 위해 대기시간을 줄일 수 있는 매 클록마다 중계되는 중계 방식을 제안하고 이를 AXI 프로토콜 기반의 버스에 적용하여 구현하였다.

• Proceedings of the Korean Information Science Society Conference
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• 2002.10e
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• pp.127-129
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• 2002

NP Forum에서는 다양한 밴더의 네트워크 프로세서와 스위치 패브릭간에 물리적 인터페이스를 제공하기 위해 CSIX-L1(Common Switch Interface-Level 1 )인터페이스를 표준화하였다. IBM 네트워크 프로세서는 MPLS 및 VPN, VLAN, Security, Ipv6와 같은 다양한 어플리케이션과 TBI. SMII CMII. POS bus등 다양한 가입자 인터페이스를 지원하며, L2 기 반에서 2.5Gbps 이상의 패킷 처리를 수행하기 때문에 많은 시스템에 사용된다. 그러나 IBM네트워크 프로세서는 스위치 인터페이스로 DASL인터페이스를 사용한다. 따라서 DASL인 터페이스와 CSIX-L1 인터페이스를 정합하기 위해서는 IBM UDASL칩을 이용해 DASL인 터페이스를 UTOPIA-L3인터페이스로 변환해야 하며, 이것을 다시 CSIX-L1인터페이스로 변환해야 한다. 따라서 본 논문에서는 UTOPIA-L3인터페이스 패킷과 CSIX-L1인터페이스 프레임을 상호 변환하는 모듈을 설계하였으며, 32비트 데이터 버스와 최대 125MHz로클록을 사용해 최대 4Gbps의 패킷처리를 제공하도록 구현하였다. 또한 스위치 패브릭의 특정 포트에서 과잉 트래픽 전달로 인해 발생할 수 있는 블로킹을 방지하기 위해 네트워크 프로세서에게 3개의 Priority／최대 64개 포트수의 VOQ(Virtual Output Queue)를 제공하는 기법에 대해서 기술한다.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.3
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• pp.44-54
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• 2000

In this paper, a design methodology for the frequency-adaptive negative-delay circuit which can be implemented in standard CMOS memory process is proposed. The proposed negative-delay circuit which is a basic type of the analog SMD (synchronous mirror delay) measures the time difference between the input clock period and the target negative delay by utilizing analog behavior and repeats it in the next coming cycle. A new technology that compensates the auxiliary delay related with the output clock in the measure stage differentiates the Proposed method from the conventional method that compensates it in the delay-model stage which comes before the measure stage. A wider negative-delay range especially prominent in the high frequency performance than that in the conventional method can be realized through the proposed technology. In order to implement the wide locking range, a new frequency detector and the method for optimizing the bias condition of the analog circuit are suggested. An application example to the clocking circuits of a DDR SDRAM is simulated and demonstrated in a 0.6 ${\mu}{\textrm}{m}$ n-well double-poly double-metal CMOS technology.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.8
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• pp.117-124
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• 2009

This paper describes a 3 to 5 GHz frequency synthesizer for MB-OFDM (Multi-Band OFDM) UWB (Ultra- Wideband) application using 0.13 ${\mu}m$ CMOS process. The frequency synthesizer operates in the band group 1 whose center frequencies are 3432 MHz 3960 MHz, and 4488 MHz. To cover the overall frequencies of group 1, an efficient frequency planning minimizing a number of blocks and the power consumption are proposed. And, a high-frequency VCO and LO Mixer architecture are also presented in this paper. A new mixed coarse tuning scheme that utilizes the MIM capacitance, the varactor arrays, and the DAC is proposed to expand the VCO tuning range. The frequency synthesizer can also provide the clock for the ADC in baseband modem. So, the PLL for the ADC in the baseband modem can be removed with this frequency synthesizer. The single PLL and two SSB-mixers consume 60 mW from a 1.2 sV supply. The VCO tuning range is 1.2 GHz. The simulated phase noise of the VCO is -112 dBc/Hz at 1 MHz offset. The die area is 2 ${\times}$ 2mm$^2$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.6
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• pp.1153-1157
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• 2004

This paper describes a new programmable DLL_based frequency synthesizer. Generally, PLLs have been used for frequency synthesis. Inherent fast locking DLLs are also used for frequency synthesis. However, DLL needs a frequency multiplier for various frequencies. A conventional frequency multiplier used in DLL has a restriction in which a multiple is fixed. However, the proposed DLL can generate clocks which are from 6 times to 10 times of the reference clock. Frequency range of the proposed DLL is from 600MHz to 1GHz. The idea has been confirmed by HSPICE simulations in a $0.35-\mu\textrm{m}$ CMOS process.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.2
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• pp.451-454
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• 2011

In this paper, a wideband clock generator using novel Automatic frequency calibration(AFC) scheme is proposed. Wideband clock generator using AFC has the advantage of small VCO gain and wide frequency band. The conventional AFC compares whether the feedback frequency is faster or slower then the reference frequency. However, the proposed AFC can detect frequency difference between reference frequency with feedback frequency. So it can be reduced an operation time than conventional methods AFC. Conventional AFC goes to the initial code if the frequency step changed. This AFC, on the other hand, can a prior state code so it can approach a fast operation. In simulation results, the proposed clock generator is designed for DisplayPort using the CMOS ring-VCO. The VCO tuning range is 350MHz, and a VCO frequency is 270MHz. The lock time of clock generator is less then 3us at input reference frequency, 67.5MHz. The phase noise is -109dBC/Hz at 1MHz offset from the center frequency. and power consumption is 10.1mW at 1.8V supply and layout area is $0.384mm^2$.