• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.9 no.3
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• pp.69-74
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• 2009

A novel protocol is proposed to achieve sub-carner-based rate adaptation in OFDM-based wireless systems. The protocol requires the addition of one OFDM symbol to the Clear-to-Send (CTS) packet defined in the IEEE 802.11 standard_ When receiving a Ready-To-Send (RTS) packet, the receiver determines the number of bits to be allocated in each sub-carrier through channel estimation. This decision is delivered to the sender using an additional OFDM symbol. That is, bit-allocation over sub-carriers is achieved using only one additional OFDM symbol. The protocol also provides an error recovery process to synchronize the bit-allocation information between the sender and receiver. The protocol enhances the channel efficiency in spite of the overhead of one additional OFDM symbol.

• Journal of IKEEE
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• v.17 no.1
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• pp.71-76
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• 2013

AlGaN/GaN HEMTs (High electron mobility transistors) with narrow channel were fabricated and the effect of channel scaling on the device were investigated. The devices were fabricated using e-beam lithography to have same channel length of $1{\mu}m$ and various channel width from 0.5 to $9{\mu}m$. The sheet resistance of the channel was increased corresponding to the decrease of channel width and the increase was larger at the width of sub-${\mu}m$. The threshold voltage of the HEMT with $1.6{\mu}m$ and $9{\mu}m$ channel width was -2.85 V. The transistor showed a variation of 50 mV at the width of $0.9{\mu}m$ and the variation 350 mV at $0.5{\mu}m$. The transconductance of 250 mS/mm was decreased to 150 mS/mm corresponding to the decrease of channel width. Also, the gate leakage current of the HEMT decreased with channel width. But the degree of was reduced at the width of sub-${\mu}m$. It was thought that the variation of the electrical characteristics of the HEMT corresponding to the channel width came from the reduced Piezoelectric field of the AlGaN/GaN structure by the strain relief.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.05a
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• pp.839-841
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• 2015

본 연구에서는 비대칭 이중게이트 MOSFET의 채널길이와 채널두께의 비에 따른 드레인 유도 장벽 감소 현상의 변화에 대하여 분석하고자한다. 드레인 전압이 소스 측 전위장벽에 영향을 미칠 정도로 단채널을 갖는 MOSFET에서 발생하는 중요한 이차효과인 드레인 유도 장벽 감소는 문턱전압의 이동 등 트랜지스터 특성에 심각한 영향을 미친다. 드레인 유도 장벽 감소현상을 분석하기 위하여 포아송방정식으로부터 급수형태의 전위분포를 유도하였으며 차단전류가 $10^{-7}A/m$일 경우 비대칭 이중게이트 MOSFET의 상단게이트 전압을 문턱전압으로 정의하였다. 비대칭 이중게이트 MOSFET는 단채널효과를 감소시키면서 채널길이 및 채널두께를 초소형화할 수 있는 장점이 있으므로 본 연구에서는 채널길이와 두께 비에 따라 드레인 유도 장벽 감소를 관찰하였다. 결과적으로 드레인 유도 장벽 감소 현상은 단채널에서 크게 나타났으며 하단게이트 전압, 상하단 게이트 산화막 두께 그리고 채널도핑 농도 등에 따라 큰 영향을 받고 있다는 것을 알 수 있었다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.6
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• pp.1422-1428
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• 2014

This paper has analyzed threshold voltage roll-off for bottom gate voltages of asymmetric double gate(DG) MOSFET. Since the asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates, the bottom gate voltage influences on threshold voltage. It is, therefore, investigated how the threshold voltage roll-off known as short channel effects is reduced with bottom gate voltage. In the pursuit of this purpose, off-current model is presented in the subthreshold region, and the threshold voltage roll-off is observed for channel length and thickness with a parameter of bottom gate voltage as threshold voltage is defined by top gate voltage that off-currnt is $10^{-7}A/{\mu}m$ per channel width. As a result to observe the threshold voltage roll-off for bottom gate voltage using this model, we know the bottom gate voltage greatly influences on threshold voltage roll-off voltages, especially in the region of short channel length and thickness.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.35 no.8
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• pp.815-823
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• 2011

Combustion phenomena in porous media combustors are widely used in industrial fields for the combustion of lowgrade fuels and the regeneration of combustion heat. However, studies of combustion phenomena in porous media have been limited, because these phenomena are difficult to observe, and the configurations of porous media are complex. We propose a simple model combustor: a multi-channel combustor that consists of many layers of combustion channels made of quartz plates. We conducted an experimental observation of the flames in the multi-channel combustor and obtained experimental results for the flame stabilization limits. Flames formulated in the multi-channel combustor showed variation in the spatial distribution depending on the heat transfer between neighboring channels. A simple analytical model was developed and the variation in the flammability limits of the multi-channel combustor was discussed. This study will enhance our understanding of flame behavior in a porous-media combustor.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.9
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• pp.2183-2188
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• 2014

This paper has analyzed threshold voltage movement for channel doping concentration of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is generally fabricated with low doping channel and fully depleted under operation. Since impurity scattering is lessened, asymmetric DGMOSFET has the adventage that high speed operation is possible. The threshold voltage movement, one of short channel effects necessarily occurred in fine devices, is investigated for the change of channel doping concentration in asymmetric DGMOSFET. The analytical potential distribution of series form is derived from Possion's equation to obtain threshold voltage. The movement of threshold voltage is investigated for channel doping concentration with parameters of channel length, channel thickness, oxide thickness, and doping profiles. As a result, threshold voltage increases with increase of doping concentration, and that decreases with decrease of channel length. Threshold voltage increases with decrease of channel thickness and bottom gate voltage. Lastly threshold voltage increases with decrease of oxide thickness.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.05a
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• pp.741-744
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• 2014

This paper has analyzed threshold voltage roll-off for bottom gate voltages of asymmetric double gate(DG) MOSFET. Since the asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates, the bottom gate voltage influences on threshold voltage. It is, therefore, investigated how the threshold voltage roll-off known as short channel effects is reduced with bottom gate voltage. In the pursuit of this purpose, off-current model is presented in the subthreshold region, and the threshold voltage roll-off is observed for channel length and thickness with a parameter of bottom gate voltage as threshold voltage is defined by top gate voltage that off-currnt is $10^{-7}A/{\mu}m$ per channel width. As a result to observe the threshold voltage roll-off for bottom gate voltage using this model, we know the bottom gate voltage greatly influences on threshold voltage roll-off voltages, especially in the region of short channel length and thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.10
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• pp.2403-2408
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• 2013

This paper has analyzed the change of forward and backward current for channel doping concentration to analyze off-current of double gate(DG) MOSFET. The Gaussian function as channel doping distribution has been used to compare with experimental ones, and the two dimensional analytical potential distribution model derived from Poisson's equation has been used to analyze the off-current. The off-current has been analyzed for the change of projected range and standard projected range of Gaussian function with device parameters such as channel length, channel thickness, gate oxide thickness and channel doping concentration. As a result, this research shows the off-current has greatly influenced on forward and backward current for device parameters, especially for the shape of Gaussian function for channel doping concentration.

• The Journal of the Korea Contents Association
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• v.17 no.8
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• pp.80-89
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• 2017

Television viewing affects viewers' attitudes and opinions on their political issues. Since the beginning of General Programming TV services in 2011, they are criticized of their politically biased programming. In order to investigate the effect of General Programming TV on voters' behavior, we analyzed whether or not there is a change in the voting behavior of the conservative parties among the areas with high and low TV ratings of general programming TV. Based on the result of 18th presidential election in December 2012, we could not find any difference in voting behavior on the Saenuri party among the areas with high and low ratings of general programming TV channels. However, in the 6th provincial election in June 2014, while the voting shares of the Saenuri party were higher in the areas with high ratings of TV Chosun, Channel A, and JTBC than in those areas with low ratings.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.8
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• pp.1606-1612
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• 2012

Cognitive radio technology enables us to utilize the extra spectrum which is not used by the primary users by sensing the channel condition. To use such an extra spectrum, spectrum allocation is one of the important issues in the cognitive radio networks. The network is dynamic and the available channels are changeable, and the opportunistic channel allocation is required to use the resource efficiently without interference to the primary networks. In this paper, modified proportional fairness scheduling is proposed for cognitive radio networks to satisfy the both fairness and system throughput, and the modified scheduling was designed to reduce the interference to the primary users.