• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.5 no.1
• /
• pp.166-172
• /
• 2001

A RF wideband receiver for INMARSAT-B satellite communications system was composed of low noise amplifier and high gain amplifier, The low noise amplifier used to the resistive decoupling circuit for input impedance matching and self-bias circuits for low noise. The high gain amplifier consists of matched amplifier type to improve receiver gain. The active bias circuit can be used to provide temperature stability without requiring the large voltage drop or relatively high-dissipated power needed with a bias stabilization resistor. The bandpass filter was used to reduce a spurious level. As a result, the characteristics of the receiver implemented here show more than 60 dB in gain and less than 1.8:1 in input and output voltage standing wave ratio(VSWR), especially the carrier to noise ratio which is input signal level -126.7 dB m at 1537.5 MHz is a 45.23 dB /Hz at a 1.02 kHz.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.44 no.8
• /
• pp.16-21
• /
• 2007

CMOS variable gain amplifier (VGA) IC designs for the structure monitoring systems of the telemetries were developed. A three stage cascaded VGA using a differential amplifier and a linear-in-dB controller is presented. A proposed VGA is a modified version of a conventional VGA such that the gain is controlled in a linear-in-dB fashion through the current ratio. The proposed VGA circuit introduced in this paper has a dynamic range of 77 dB with 1.5 dB gain steps. It also achieved a gain error of less than 1.5 dB over 77 dB gain range. The VGA can operate up to 10MHz dissipating 13.8 mW from a single 1.8 V supply. The core area of the VGA fabricated in a Magnachip $0.18{\mu}m$ standard CMOS process was about $430{\mu}m{\times}350{\mu}m$. According to measurement results, we can verify that the proposed method is reasonable with regard to the enhancement of dynamic range and the better linear-in-dB characteristics.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2015.05a
• /
• pp.824-825
• /
• 2015

본 논문은 차량 레이더용 24-GHz/77-GHz 이중 대역 CMOS 저 잡음 증폭기를 제안한다. 이러한 회로는 1.8볼트 전원에서 동작하며, 저 전압 전원 공급에서도 높은 전압 이득과 낮은 잡음지수를 가지도록 설계하였다. 제안한 회로는 TSMC $0.13-{\mu}m$ 혼성신호/고주파 CMOS 공정($f_T/f_{MAX}=120/140GHz$)으로 설계되어 있다. 전체 칩 면적을 줄이기 위해 가능한한 많은 부분에 실제 수동형 인덕터 대신 전송선을 이용하였다. 제안한 회로는 최근 발표된 연구결과에 비해 높은 전압 이득, 낮은 잡음지수 및 작은 칩 크기 특성을 보였다.

• Journal of the Institute of Electronics Engineers of Korea SC
• /
• v.37 no.2
• /
• pp.29-36
• /
• 2000

The principle and design of two-stage CMOS operational amplifier with rail-to-rail input and class-AB output stage is presented. The rail-to-rail input stage shows almost constant transconductance independent of the common mode input voltage range in global transistor operation region. This new technique does not make use of accurate current-voltage relationship of MOS transistors. Hence it was achieved by using simple linear relationship of currents. The simulated transconductance variation using SPICE is less the 4.3%. The proposed global two-stage opamp can operate both in strong inversion and in weak inversion. Class AB output stage proposed also has a full output voltage swing and a well-defined quiescent current that does not depend on power supply voltage. Since feedback class- AB control is used, it is expected that this output stage can be operating in extremely low voltage. The variation of DC-gain and unity-gain frequency is each 4.2% and 12%, respectively.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.23 no.4
• /
• pp.1121-1133
• /
• 1998

In this paper, a new method is proposed for a simple andaccurate design of larage-sigal power amplifier using the output current- and volage- waveform analysis. An existing high-efficiency theory, Harmonic Loading, is modified to apply to a real device, and the notion of "actual bias point at large-signal input" is proposed. Based on the proposed theory, 2GHz band poweramplifier is implemented using HEMT device, and the implemented amplifier shows 14dBm output power, 46% drain efficienty, 38% power-added efficiency and 7.8dB gain at 2V bias voltage.

• Journal of the Korea Society of Computer and Information
• /
• v.6 no.4
• /
• pp.125-130
• /
• 2001

The application of the operational trasconductance amplifier (OTA) in the design of a amplifier with voltage-controlled gam is demonstrated first. I designed OTA with linear operation and constructed a Amplifier with two OTA. In this design. I used OTA as open loop. Computer simulation result, designed OTA and Amplifier charateristics has a good matching with the theoritical value. The OTA is used often in open-loop and therefore it is wise to learn how to treat the two input pins independently, as a vertual short circuit can not be assured in many configurations.

• Journal of IKEEE
• /
• v.17 no.3
• /
• pp.324-331
• /
• 2013

In this paper, we implemented memristor emulator circuit on Printed Circuit Board (PCB) and observed the inherent pinched hysteresis characteristic of memristors by measuring the emulator circuit on PCB. The memristor emulator circuit implemented on PCB is composed of simple discrete devices not using any complicated circuit blocks thus we can integrate the memristor emulator circuits in very small layout area on Silicon substrate. The programmable gain amplifier is designed using the proposed memristor emulator circuit and verified that the amplifier's voltage gain can be controlled by programming memristance of the emulator circuit by circuit simulation. Threshold switching is also realized in the proposed emulator circuit thus memristance can remain unchanged when the input voltage applied to the emulator circuit is lower than VREF. The memristor emulator circuit and the programmable gain amplifier using the proposed circuit can be useful in teaching the device operation, functions, characteristics, and applications of memristors to students when thet cannot access to device and fabrication technologies of real memristors.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2006.05a
• /
• pp.902-905
• /
• 2006

This paper presents a new RF testing scheme based on a design-for-testability (DFT) method for measuring functional specifications of RF integrated circuits (IC). The proposed method provides input impedance. gain, noise figure. input voltage standing wave ratio (VSWR) and output signal-to-noise ratio (SNR) of a low noise amplifier (LNA). The RF test scheme is based on theoretical expressions that produce the actual RF device specifications by output DC voltages from the DR chip.

• Proceedings of the KIPE Conference
• /
• 2018.11a
• /
• pp.181-182
• /
• 2018

본 논문에서는 전압 피드백 보상에 의한 동적 과변조 기법의 성능 향상 방법을 제안한다. 전동기 구동 시스템에서 인버터는 선형 변조 영역에서 동작할 경우 단순히 전압 이득이 1인 전압 증폭기로 볼 수 있다. 그러나 과변조 영역에서는 기존의 동적 과변조 기법 적용 시 지령 전압에 대한 인버터 출력 전압의 비선형성으로 인해 전압 이득이 1보다 작아진다. 따라서 과변조 성능이 저하되는데 본 논문에서는 제한된 전압을 피드백 보상하여 과변조 성능을 향상시켰다. 이로 인해 구동 전동기의 출력 토크 성능 및 전류 제어 동특성이 향상될 수 있다. 제안된 방법을 800W PMSM(Permanent Magnet Synchronous Motor)의 약자속 제어에 적용하여 그 효용성을 확인하였다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.26 no.6
• /
• pp.593-596
• /
• 2015

In this paper, we design a high efficiency class E power amplifier operating at low drain bias voltage for wireless power transfers. A 13.56 MHz power amplifier is designed at drain bias voltage of 12.5 V using Si MOSFET with the breakdown voltage of 40 V. High quality-factor solenoidal inductor is designed and fabricated for use in output matching circuit to improve output power and efficiency. Input matching circuit simply consists of resistor and inductor to reduce the circuit area and improve the stability. The fabricated power amplifier shows the measured output power of 38.6 dBm with the gain of 16.6 dB and power added efficiency of 89.3 % at 13.56 MHz.