• Journal of the Institute of Convergence Signal Processing
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• v.4 no.2
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• pp.61-69
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• 2003

In this paper, we developed the U parameter test system which inspects the property of DC parameter for semiconductor products. The developed system is interfaced by IBM-PC. It is consisted of CPLD part, ADC (Analogue to Digital Converter), DAC (Digital to Analogue Converter), voltage/current source, variable resistor and measurement part. In the proposed system, we have designed the constant voltage source and the constant current source in a part. The CPLD part is designed by VHBL, which it generates the control and converts the serial data to parallel data. The proposed system has two test channels and it operates VFCS mode and CFVS mode. The range of test voltage is from 0[V] to 100[V], and the range of test current is from 0[mA] to 100[mA)]. The diode is tested. The test results have a good performance.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.4
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• pp.1-12
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• 2003

In this study, a regime where independent treatment of SETs in transient simulations is valid has been identified quantitatively. It is found that as in the steady-state case, each SET can be treated independently even in the transient case when the interconnection capacitance is large enough. However, the value of the load capacitance $C_{L}$of the interconnections for the independent treatment of SETs is approximately 10 times larger than that of the steady state case. A compact SET transient model is developed for transient circuit simulation by SPICE. The developed model is based on a linearized equivalent circuit and the solution of master equation is done by the programming capabilities of the SmartSpice. Exact delineation of several simulation time scales and the physics-based compact model make it possible to accurately simulate hybrid circuits in the time scales down to several tens of pico seconds. The simulation time is also shown to depend on the complexity level of the transient model.l.

• The Transactions of the Korean Institute of Power Electronics
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• v.15 no.5
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• pp.369-375
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• 2010

This paper presents a design and implementation of 3.3 kW on-board battery charger for electric vehicles or plug-in hybrid electric vehicles. Considering characteristics of the electric vehicles, a series-loaded resonant dc-dc converter and frequency control scheme are adopted to improve efficiency and reliability, and to reduce volume and cost. The developed on-board battery charger is designed and implemented by using high frequency of 80-130 kHz and zero voltage switching method. The experimental result indicates 92.5% of the maximum efficiency, 5.84 liters in volume, and 5.8kg in weight through optimal hardware design.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.261-265
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• 2005

This paper describes the DC-DC Converter for Ancillary Power Supply in Hybrid Electric Vehicle. DC-DC Converter is used for charging 12V auxiliary battery supplying electric power to head ramp, audio, ECU etc in automobiles. used DC-DC Converter Topology is PS-ZVS FB(Phase Shifted Zero Voltage Switching Full-Bridge) to reduce switching loss and EMI noise induced by high frequency operating condition. And For easy compensation and stable system response characteristic, current mode control method including slope compensation is employed. Constant current / constant voltage charging control method guarantee stable electric charging of auxiliary battery. Simulation toll PSIM6.0 is used for initial circuit parameter settings and H/W debuging. Thermal problems of Switching components in DC-DC Converter is improved by using Thermo Tracer.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.213-219
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• 1997

The plasma polymerized styrene films were prepared by using an inter-electrode capacitively coupled gas-flow-type reactor, and the effects of plasma polymerization condition on the molecular weight distribution were investigated by Fourier Transform Infrared (FT-IR), Pyrolysis Gas Chromatography(PyGC), Differential Scanning Calorimetry(DSC) and Gel Permeation Chromatography(GPC). From the above results, the very cross-linked films different from chemical characteristics of the starting monomer were taken out, and it is realized that the molecular structure, cross linking density, and molecular weight distribution could be controlled by changing the parameters such as deposition pressure, deposition power and gas flow rate. Accordingly, it is suggested that plasma polymerization method performed by inter-electrode capacitively coupled gas-flow-type reactor has good characteristics for manufacturing the functional organic thin films which can be applied in sensors, opto-electric device, photo-resist by changing the polymerization parameters.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.5
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• pp.555-560
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• 2014

In order to improve spectrum sensitivity of photodiode for detection of the laser wavelength at 850 nm ~ 1000 nm of near-infrared band, this study has produced silicon-based photodiode whose area is $5000{\mu}m{\times}2000{\mu}m$, and the thickness is $280{\mu}m$. It was packed by the TO-5 type. The electrical properties of the dark currents have valued of approximately 0.1 nA for 5 V reverse bias, while the capacitance showed 32.5 pF at frequency range of 1 kHz and about 32.4 pF at the range of 200 kHz for 0 V. In addition, the rising time of output signal was as fast response as 20.92 ns for 10V. For the optical properties, the best spectrum sensitivity was 0.57 A/W for 890 nm, while it was relatively excellent value of 0.37 A/W for 1,000 nm. Over all, there were good spectrum sensitivity for this diode over the range of 870 ~ 920 nm.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.249-253
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• 2000

We have analyzed electrical characteristics of the amorphous $MgTiO_3$thin films deposited by pulsed laser deposition (PLD) technique with the temperature of 400~$500^{\circ}C$. The electrical characteristics of $MgTiO_3$films heavily depend on the deposition temperature. We speculate that the density of anomalous positive charge (APC) substantially increases as the deposition temperature lowers, causing the HF C-V curves shift to the direction of the negative gate voltage. We further observed that both the degree of C-V shift as a function of the deposition temperature and the density of APC were minimized by the use of $SiO_2$with thickness of approximately 100 $\AA$ between $MgTiO_3$films and the Si substrate.

• Journal of Digital Contents Society
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• v.18 no.6
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• pp.1199-1205
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• 2017

Global energy consumption is rapidly increasing yearly due to drastic industrial advances, requiring the development of new energy storage devices. For this reason, supercapacitors with fast charge-discharge, long life cycle and high power density is getting attention, and have been considered as one of the potential energy storage systems. In this research, we developed a supercapacitor that consists of amorphous manganese oxide($MnO_2$) electrodes deposited onto carbon cloth substrates using the hydrothermal method. The Fe-doped amorphous $MnO_2$ samples were characterized by X-ray diffraction(XRD), Energy Dispersive X-ray spectroscopy(EDX), as well as scanning electron microscopy(SEM). The electrochemical analysis of the prepared samples were performed using cyclic voltammetry and galvanostatic charge-discharge measurements in 1M $Na_2SO_4$ electrolyte. The test results demonstrate that the supercapacitor based on the Fe-doped amorphous $MnO_2$ electrodes has a specific capacitance as high as 163F/g at 1A/g current density, and good cycling stability of 87.34% capacitance retention up to 1000 cycles.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.2
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• pp.93-100
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• 2009

This paper presents a step up four channel DC-DC converter using charge pump voltage doubler structure. Our goal is to design and implement DC-DC converter for capacitive SP4T RF MEMS switch in front end module in wireless transceiver system. Charge pump structure is small and consume low power 3.3V input voltage is boosted by DC-DC Converter to $11.3{\pm}0.1V$, $12.4{\pm}0.1V$, $14.1{\pm}0.2V$ output voltage With 10MHz switching frequency. By using voltage level shifter structure, output of DC-DC converter is selected by 3.3V four channel selection signals and transferred to capacitive MEMS devices. External passive devices are not used for driving DC-DC converter. The total chip area is $2.8{\times}2.1mm^2$ including pads and the power consumption is 7.52mW, 7.82mW, 8.61mW.

• Journal of the Korean Electrochemical Society
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• v.2 no.1
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• pp.17-22
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• 1999

Since the use of porous silicon for microsensors and microactuators is in the euly stage of study, only several application devices, such as light-emitting diodes and chemical sensors have so far been demonstrated. In this paper we present an overview of the present status of porous silicon sensors and actuators research with special emphasis on the applications of chemical sensors and optical devices. The capacitive type porous silicon humidity sensors had a nonlinear capacitance-humidity characteristic and a good sensitivity at higher humidity above $40\%RH$. The porous silicon $n^+-p-n^+$ device showed a sharp increase in current when exposed to an ethanol vapor. The $p^+-PSi-n^+$ diode fabricated on porous silicon diaphragm exhibited an optical switching characteristic, opening up its utility as an optical sensor or switch. The photoluminescence (PL) spectrum, taken from porous silicon under 365 nm excitation, had a broad emission, peaked at -610 nm. The electroluminescence(EL) from ITO/PSi/In LED had a broader spectrum with a blue shifted peak at around 535nm than that of the PL.