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Four Channel Step Up DC-DC Converter for Capacitive SP4T RF MEMS Switch Application  

Jang, Yeon-Su (School of Electrical Engineering and Computer Science, Seoul National University, Inter-university Semiconductor Research Center)
Kim, Hyeon-Cheol (School of Electrical Engineering, Ulsan University)
Kim, Su-Hwan (School of Electrical Engineering and Computer Science, Seoul National University, Inter-university Semiconductor Research Center)
Chun, Kuk-Jin (School of Electrical Engineering and Computer Science, Seoul National University, Inter-university Semiconductor Research Center)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.46, no.2, 2009 , pp. 93-100 More about this Journal
Abstract
This paper presents a step up four channel DC-DC converter using charge pump voltage doubler structure. Our goal is to design and implement DC-DC converter for capacitive SP4T RF MEMS switch in front end module in wireless transceiver system. Charge pump structure is small and consume low power 3.3V input voltage is boosted by DC-DC Converter to $11.3{\pm}0.1V$, $12.4{\pm}0.1V$, $14.1{\pm}0.2V$ output voltage With 10MHz switching frequency. By using voltage level shifter structure, output of DC-DC converter is selected by 3.3V four channel selection signals and transferred to capacitive MEMS devices. External passive devices are not used for driving DC-DC converter. The total chip area is $2.8{\times}2.1mm^2$ including pads and the power consumption is 7.52mW, 7.82mW, 8.61mW.
Keywords
DC-DC converter; charge pump; four channel; output selection;
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