• Journal of Astronomy and Space Sciences
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• v.21 no.4
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• pp.343-350
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• 2004

The charge exchange (or transfer) due to collision with hydrogen has important effects on the physical characteristics of astrophysical plasma. In this paper, collisional ionization equilibrium in the temperature range of ${\sim}1,000--80,000K$ are investigated for C, N, and O ions including the effects of charge exchange. The calculated ionic abundance fractions are compared with those of previous works. The ionic abundance fractions calculated in the paper can be used in understanding the spectroscopic properties of warm interstellar medium. It is also found that the ratio between the degree of ionization of oxygen and that of hydrogen shows big difference with the previously well-known result for the environment where the collisional ionization is not important. This implies that investigations on the collisional ionization in the warm interstellar medium are required.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.5
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• pp.1-9
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• 1981

Experimental results on a 4-bit charge-coupled A/D converter are described. Major operations in the successive approximation algorithm are implemented in a monolithic chip, CCADC, which was fabricated usir p-channel CCD technology, with its die size of 4,200 mil2 Typical operating frequency range has been found out to be from 500Hz to 200kHz. In that frequency range, no missing code has been found in the whole signal range of 2.4 volts for ramp signal slewing at 1 LSB/(sampling time). A discussion is made on several layout techniques to conserve the nominal binary ratio of (8:4:2:1) among the areas of four adjacent potential wells (M wells), whose charge storing capacities correspond to each bit magnitude - 3.6 pC, 1.8 pC, 0.9 pC, and 0.45 pC nominal in the order of MSB to the LSB. The effect of 'dump slot', which is responsible for the excessive nonlinearity (2$\frac{1}{2}$LSB) in the A/D converter, is explained. A novel input scheme called 'slot zero insertion' to circumvent the deleterious effects of the dump slot is described with the experimental results.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.74-74
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• 2011

최근 새로운 형태의 디스플레이에 관한 관심이 집중되고 있다. 이들 중 특히 투명 산화물 반도체는 기존의 실리콘 기반의 반도체에 비해 가시광 영역에서 높은 투과도를 보이며, 또한 기존의 비정질 실리콘 소자에 비해서 10 cm2/Vs이상의 높은 전하 이동도 값을 가진다. 본 연구에서는 투명 산화물 반도체 소재 중 InGaZnO4를 사용하여 펄스 레이저 방법으로 Al2O3 (0001)기판 위에 비정질 상태인 a-InGaZnO4 박막을 성장 시켰다. 박막의 증착 온도를 변화(RT, $50^{\circ}C$, $150^{\circ}C$, $250^{\circ}C$, $450^{\circ}C$, $550^{\circ}C$)시켜 성장된 박막의 구조적, 화학적, 전기적 그리고 광학적 특성을 조사하였다. 증착 온도가 $450{\sim}550^{\circ}C$ 사이에서 박막의 상태가 비정질(amorphous)에서 polycrystalline으로 성장되는 것을 X-Ray Diffraction과 Field Emission-Scanning Electron Microscope를 이용하여 확인하였고 이는 InGaZnO4 박막의 결정화 온도가 $450^{\circ}C$ 이상임을 알 수 있었다. X-ray Photoelectron Spectroscopy를 통해서 target 물질과 성장된 박막의 조성 및 화학적 상태를 고찰한 결과, 박막의 결정성 변화가 화학적 상태 변화와는 무관하다는 사실을 알 수 있었다. 온도 의존 비저항 측정을 통해 박막이 반도체 성향을 가지는 것을 확인 하였다. 또한 Hall 측정 결과 증착 온도가 올라 갈수록 전하 밀도는 증가 하지만, 전하 이동도는 다결정 박막($550^{\circ}C$)에서 급격히 감소하고, 이로 인해 비저항 값이 크게 증가함을 알 수 있었다. 이는 다결정 박막 내 존재하는 grain boundary들이 이동도 값에 영향을 준다는 것으로 추측할 수 있다. Ultra violet-Visible-Near Infrared 측정을 통해 가시광 영역에서 80%이상의 투과율을 나타내며 증착 온도가 증가함에 따라 에너지 밴드갭(Eg)이 커지는 것을 확인 할 수 있는데 이는 Hall 측정 결과에서 확인한 전하 밀도의 증가로 인해 에너지 밴드갭이 커지는 Burstein-Moss 효과로 설명할 수 있다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.420-423
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• 2015

This paper proposes a method of non-linearity error detection and calibration for binary-weighted charge-driven DACs. In general, the non-linearity errors of DACs often occur due to the mismatch of layout designs or process variation, even when careful layout design methods and process calibration are adopted. Since such errors can substantially degrade the SNDR performance of DAC, it is crucial to accurately measure the errors and calibrate the design mismatches. The proposed method employs 2 identical DAC circuits. The 2 DACs are sweeped, respectively, by using 2 digital input counters with a fixed difference. A comparator identifies any non-linearity errors larger than an acceptable discrepancy. We also propose a calibration method that can fine-tune the DAC's capacitor sizes iteratively until the comparator finds no further errors. Simulations are presented, which show that the proposed method is effective to detect the non-linearity errors and calibrate the capacitor mismatches of a 12-bit DAC design of binary-weighted charge-driven structure.

• Polymer(Korea)
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• v.31 no.2
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• pp.136-140
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• 2007

Charge transfer interaction as a hybridization mechanism of silsesquioxane/polymer was tested using carbazole (electron donor) group and dinitrobenzene (electron acceptor) group. Hybridization test was conducted using films made from mixing/casting of poly (carbazole-styrene) (PS/D) and dimtrobenzyl silsesquioxane (Cube/A), and transparent hybrid films were successfully obtained under some conditions. $^1H-NMR$ of PS/D and Cube/A, and W absorption test of hybrid films showed that one acceptor and one donor can form one charge transfer complex when no silsesquioxane molecule was included in films, but transparent hybrids with no phase separation were obtained only at acceptor/donor ratios less than 0.7 : 1. These results also suggested that on average 4 charge transfer complexes form per one silsesquioxane.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.726-728
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• 2012

In this paper, the threshold voltage characteristics have been analyzed by varying the channel thicknesses of Double Gate MOSFET. The channel thickness, as well as determining the size of the device which hardly affects SCE(Short Channel Effects), therefore the channel thicknesses is a very important parameter in the IC(Integrated circuit) design. In this study, using series charge distribution to analyze the threshold voltage on the channel thickness. Consequently, the threshold voltage decreases with increasing a channel thickness.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.276-276
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• 2011

진공증착법으로 ITO (indium-tin-oxide) 기판 위에 $AgGaSe_2$ 박막을 성장시켜 그 구조와 광학적 특성을 조사하였다. X-선 회절 분석에 의하여 살창상수는 a=5.97 ${\AA}$와 c=10.88 ${\AA}$이고, 황동광(chalcopyrite) 구조를 하고 있었으며, 그 성장 방향은 (112)방향으로 선택 성장됨을 알 수 있었다. 증착된 박막과 200~400$^{\circ}C$로 열처리한 박막의 실온에서 측정한 광학적인 에너지 띠 간격은 2.02 eV에서 2.28 eV까지 변하였다. 또한 열린회로로 구성되어 있는 시료의 표면에 광 펄스를 주입하여 표면에서 형성된 전하들의 거동을 광유기 방전 특성(PIDC) 방법을 이용하여 조사하였다. 초기전위 V0로 형성된 시료의 양단을 주행하는 운반자 농도, 전류밀도 및 전기장 효과를 관찰하여 운반자의 주행시간, 이동도 그리고 전하운반자 농도를 계산한 결과는 각각 42 ${\mu}s$~81 ${\mu}s$, $1.9{\times}10^{-1}\;cm^2/Vs$~$5.7{\times}10^{-2}\;cm^2/Vs$ 그리고 약 $6.0{\times}10^{17}/cm^3$~$2.0{\times}10^{18}/cm^3$이었으며, p-형 전도를 나타내었다. 원자 힘 현미경 실험으로 제곱평균제곱근 거칠기와 입계크기를 조사하였으며, X-선 광전자 분광실험으로 원소들의 결합상태를 관찰하였다.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.292-294
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• 2016

이황화몰리브덴을 활용한 전계효과트랜지스터(Field Effect Transistor)는 채널 물질의 우수한 특성으로 차세대 저전력 고성능 스위치와 광전소자로 주목받고있다. Underlap 게이트 구조에서 게이트 길이(L_G), 절연체 두께(T), 절연체 상대유전율(${\varepsilon}_r$)에 따라 변화하는 소자특성을 분석하여 저전력 고성능 $MoS_2$ 전계효과트랜지스터를 위한 게이트 구조 최적화방법을 모색하였다. EDISON simulator 중 Tight-binding NEGF 기반 TMD FET 소자 성능 및 특성 해석용 S/W를 활용하여 게이트 구조에 따른 게이트 전압 - 드레인 전류 상관관계(transfer characteristic)를 얻고, Y-function method를 이용하여 채널 유효전하이동도(Effective Mobility), Sub-threshold Swing, on/off 전류비(on/off current ratio)를 추출하여 비교 분석하였다. 시뮬레이션으로 추출한 소자의 최대 채널 유효전하이동도는 $37cm^2V^{-1}s^{-1}$, on/off 전류비는 $10^4{\sim}10^5$, Sub-threshold Swing은 ~38mV/dec 수준을 보였다.

• Journal of the Korean Vacuum Society
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• v.11 no.2
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• pp.127-134
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• 2002

Recently, Plasma display panel(PDP) has been in the spotlight as one of the next generation flat-panel-display device. The luminance and luminous efficiency improvement is the hot issues for making a plasma display into a large flat panel device. In this paper, We suggest a new penning gas mixture, in order to find the optimum mixture gas in plasma display panel. The optimum gas composition has been found by the partial pressure of inert gases(such as Af and Kr added to matrix of He(70%)-Ne(27%)Xe(3%) and Ne(96%)-Xe(4%)). The influences of Ar or Kr addition to Ne(96%)-Xe(4%) and He(70%)-Ne(27%)-Xe(3%) mixture gases are experimentally investigated for AC Plasma Display Panel. When rare As(0.01%-0.03%) or Kr(0.01%-0.03%) is added Ne-Xe and He-Ne-Xe mixture gases, the luminance increases over 10%-20% and luminous efficiency increases over 10%-20% at 200 Torr. It is sure that luminance and efficiency are improved by Penning effect. Also, This influence of Penning effect is shown by increased wall charge(10%-25%). In addition to the result, firing voltage and minimum sustain voltage was approximately decreased by 2V-3V.

• Journal of the Korean Arthroscopy Society
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• v.17 no.1
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• pp.95-99
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• 2013

We introduce arthroscopic Bankart repair technique using antegrade suture passer that can effectively restore detached anteroinferior capsulolabral complex for shoulder anterior instability. After diagnostic arthroscopy is performed using posterior, anteroinferior and anterosuperior portals, we confirm Bankart lesion and perform debridement and decortications of anteroinferior glenoid edge and neck. Suture anchor is inserted through anteroinferior portal at 2 mm medial side of glenoid edge (4:30 direction). Scorpion$^{TM}$ loaded suture is directly advanced to detached and retracted anteroinferior capsulolabral complex and the suture is passed at 10~15 mm medial side of detached anteroinferior capsulolabral complex (5:30 direction). The suture is retrieved by Scorpion's hook and then is tied using samsung medical center (SMC) sliding knot technique. Then suture anchors are serially inserted (2:30, 3:30) and capsulolabral complex repair is performed using suture hook and suttle-relay technique. This technique that can obtain anatomical restoration of anteroinferior glenohumeral ligament with proper tension is useful technique to reduce postoperative recurrence and makes it possible for less experienced surgeons.