• Proceedings of the Membrane Society of Korea Conference
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• 1993.04a
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• pp.38-38
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• 1993

기존의 고분자막의 투과도와 선택성의 상호의존성을 개선하고자 하는 노력으로 복합막등에 관한 연구가 이제가지 이루어져왔으나 최근에는 전이금속을 유기고분자와 결합시켜 그 전이금속의 산화환원력을 이용하여 투과도와 선택성을 높이려는 연구가 진행되고 있다. 따라서 본 연구에서는 근래에 촉진수송에 자주 이용되는 전이금속을 이용한 고분자 착체막에 있어서 전이금속과 배위자, 그리고 기체와의 관계를 규명하기 위하여 1차로 Schiff base를 배위자로 이용하여 Co을 착제로 만들어 $O_2, N_2$기체를 대상으로 투과실험을 행하였다.

• Proceedings of the Membrane Society of Korea Conference
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• 1993.04a
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• pp.50-51
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• 1993

광학활성 물질의 분할은 화학공정에 있어서나 생명과학에 있어서 중요한 분야로, 특히 의약이나 농약등의 생리활성물질에 광학이성질체가 상당수 존재하고 있으며, 그중에서는 경상체간에 생리활성이 현저하게 다른 것이 상당수 존재한다. 이러한 광학활성 물질을 분리하는 방법으로는 크로마트그래피를 이용한 방법, Diastereomer를 이용하는 방법등이 있으나 본 연구에서는 고분자 착체막을 이용하여 경상체를 분리하고자 한다. 전이금속착체를 이용한 경상체의 분리는 주로 crown ether를 중심으로 이루어져 왔다. 즉 전이금속의 흡착력과 crown ether의 입체구조를 이용한 것이다. 그러나 이것은 액막에서나 가능한 것으로 고체막에서는 사용할 수 없다. 따라서 본연구에서는 아크릴 계통의 고분자 전이금속 착체막을 이용하여 아미노산 경상체간의 분리를 행하고자 한다. 즉 전이금속의 흡착력과 리간드의 입체구조를 이용하여 경상체를 분리하는 것이다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.411-418
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• 1998

The thickness dependence of stress electric filed oxide currents has been measured in oxides with thicknesses between 10 nm and 80 nm. The oxide currents were shown to be composed of stress current and transient current. The stress current was composed of stress induced leakage current and dc current. The stress current was caused by trap assisted tunneling through the oxide. The transient current was caused by the tunneling charging and discharging of the trap in the interfaces. The stress current was used to estimate to the limitations on oxide thicknesses. The transient current was used to the data retention in memory devices.

• Journal of Chest Surgery
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• v.43 no.1
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• pp.117-119
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• 2010

Choroidal melanoma is the most common primary intraocular cancer in adults. The predominant sites of metastasis that are associated with a poor prognosis are liver, lung and bone. The authors report here on a case of metastatic choroidal melanoma in the rib and bronchus, and this was all treated by surgical resection.

• Journal of the Korean Ceramic Society
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• v.38 no.1
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• pp.15-21
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• 2001

전자파 차폐 및 반사방지용으로 사용되는 SiO$_2$/ITO 이층박막의 전기적 특성에 미치는 전이금속이온의 영향에 대해 고찰하고 전자파 차폐이론식으로부터 박막의 전도특성에 모사하여 효과적인 전자파 차폐효과를 얻기 위한 전도막을 설계하고자 하였다. ITO 상층부에 전이금속염을 첨가한 실리카 복합졸을 코팅하여 SiO$_2$/ITO 이층막을 제조한 결과 최저 표면저항치를 나타내는 첨가량은 전이금속의 종류에 따라 차이를 보이지만 Sn 및 Zn이 첨가된 졸로부터 형성된 박막은 $10^{5}$Ω/$\square$ 이하의 낮은 저항치를 보였으며 가장 안정된 표면저하을 나타내었다. 또한 전자파 차폐효과와 전도박막의 표면저항을 차폐이론식으로부터 모사한 결과 Zn과 Sn의 전이금속염이 첨가된 SiO$_2$/ITO 투명전도막은 TCO99에서 정한 전자파 차폐기준에 부합하였다.다.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.4
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• pp.335-340
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• 2002

In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 113.4${\AA}$ and 814${\AA}$, which have the gate area $10^3cm^2$. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.8
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• pp.285-291
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• 2013

In this paper, MOS-Capacitor and MOSFET devices with a Low Level Leakage Current of oxide thickness, channel width and length respectively were to investigate the reliability characterizations mechanism of ultra thin gate oxide films. These stress induced leakage current means leakage current caused by stress voltage. The low level leakage current in stress and transient current of thin silicon oxide films during and after low voltage has been studied from strss bias condition respectively. The stress channel currents through an oxide measured during application of constant gate voltage and the transient channel currents through the oxide measured after application of constant gate voltage. The study have been the determination of the physical processes taking place in the oxides during the low level leakage current in stress and transient current by stress bias and the use of the knowledge of the physical processes for driving operation reliability.

• Membrane Journal
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• v.9 no.4
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• pp.221-229
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• 1999

The nominal pore size 0.2 ${\mu}m polytetrafluroethylene(PTFE, Satorius Co,) membrane was used for the filtration of 0.1 wt% kaolin, bentonite, yeast, and starch solution, respectively. After filtration, the membrane was cleaned and the pore size was measured by liquid displacement method(LDMl using water/iso-butanol system. The pore size for new PTFE membrane evaluated by LDM was comparable with those of which were measured by mercury porosimetry and scanning electron microscope. The membrane pores were severely fouled, and constricted to below 0.3 ${\mu}m in the cases of bentonite and starch solution which contained smaller particles than pores. However, in the case of kaolin - solution, only some parts of membrane pores above 0.35 ${\mu}m were slightly fouled. Hence, the phenomena of membrane fouling could be identified quantitatively by the evaluation of pore size using LDM.

• Proceedings of the Membrane Society of Korea Conference
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• 1998.04a
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• pp.68-69
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• 1998

1. 서론 : 고분자/액정 복합막은 액정의 높은 분자운동성이 물질의확산에 기여하여 우수한 투과성을 나타낸다. 이 막은 3차원의 망상구조를 갖는 매트릭스 고분자내에 액정이 연속상으로 안정하게 분산된 상분리 구조를 가지고 있다. 이 복합막은 그러한 상분리 구조에 기인하여 자기지지형(self support LC) 복합막이라고도 한다. 복합막 중에 액정은 탄화수소가스에 대하여 높은 선택성을 나타내어 막속으로 흡착을 촉진하고 액정물질이 결정에서 액정으로 변화는 전이온도에서 투과계수가 100-200 증가한다고 보고하였다. (생략)

• Journal of the Korean Institute of Telematics and Electronics T
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• v.35T no.1
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• pp.29-32
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• 1998

The low level leakage currents in silicon oxides were investigated. The low level leakage currents were composed of a transient component and a do component. The transient component was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The do component was caused by trap assisted tunneling completely through the oxide. The low level leakage current was proportional to the number of traps generated in the oxides. The low level leakage current may be a trap charging and discharging current. The low level leakage current will affect data retention in EEPROM.