• Proceedings of the KIEE Conference
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• 2006.10d
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• pp.229-231
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• 2006

본 논문은 매입형 영구자석 전동기의 고정자 전압방정식으로부터 관측기를 구성하고, 회전자 좌표계상에서 추정속도를 구하여 퍼지제어기를 이용한 속도 보상 센서리스제어를 수행하였다. 전동기의 전압방정식과 퍼지제어기만을 이용하기 때문에 전동기의 기계적 방정식에서 발생하는 기계적 제정수의 영향에 대해 강인한 특성을 갖는다. 제안된 알고리즘의 타당성과 강인함은 실제 구동을 통하여 증명한다.

• Proceedings of the KIPE Conference
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• 2013.11a
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• pp.41-43
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• 2013

PMSM 구동을 하였을 때, 인버터의 지령전압과 출력전압 사이에 왜곡이 발생하며, 대부분 Dead Time에 의한 영향 이다. 전압왜곡을 보상하는 여러 가지 방법 들이 연구되어왔다. 하지만 전압 왜곡의 보상이 abc 축 또는 dq축에서 이루어지고 있으나 어느 방식이 더 좋은지에 대한 검토가 없었다. 본 논문에서는 d-q축 전압방정식과 abc축 전압방정식으로부터 왜곡된 전압을 보상하는 방법을 비교한다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.3
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• pp.651-656
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• 2014

This paper analyzed the change of subthreshold swing for channel doping of asymmetric double gate(DG) MOSFET. The subthreshold swing is the factor to describe the decreasing rate of off current in the subthreshold region, and plays a very important role in application of digital circuits. Poisson's equation was used to analyze the subthreshold swing for asymmetric DGMOSFET. Asymmetric DGMOSFET could be fabricated with the different top and bottom gate oxide thickness and bias voltage unlike symmetric DGMOSFET. It is investigated in this paper how the doping in channel, gate oxide thickness and gate bias voltages for asymmetric DGMOSFET influenced on subthreshold swing. Gaussian function had been used as doping distribution in solving the Poisson's equation, and the change of subthreshold swing was observed for projected range and standard projected deviation used as parameters of Gaussian distribution. Resultly, the subthreshold swing was greatly changed for doping concentration and profiles, and gate oxide thickness and bias voltage had a big impact on subthreshold swing.

• 전기의세계
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• v.12
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• pp.1-5
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• 1963

원자로 출려그이 시간적 변화는 중성자의 흡수 및 누설량의 변화의 결과로 나타나는데 6개군의 지발중성자를 고려한 원자로동특성방정식은 잘 알려져 있다. 이들 식을 간단하게 풀기는 어려우므로 전자 analog회로로서 구성되는 simulator로서 해석하는 것이다. 지발중성자방사물질의 붕괴현상은 축전기에서의 전하의 충방전현상과 흡사하며 이들을 표현하는 방정식은 회로망의 전류, 전압을 나타내는 미분방정식과 유사하므로 동일한 과도현상을 나타낸다. 그러므로 노에 대한 각 parameter를 전기적 parameter에 대응시켜서 전기적으로 적분하여 전압을 검출하면 원자로의 출력을 나타낼 수 있게 된다. 이와같은 simulator로서는 지정회로망에 의한 회로가 여러 문헌에 소개되어 있으나 본고에서는 순수한 analog전자계산기에 의한 방법을 채택하였으며 이에 소요되는 연산요소는 시중에서 구할수 있는 부분품으로 조립하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.11
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• pp.2373-2377
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• 2009

In this paper, the threshold voltage characteristics have been analyzed using three dimensional Poisson's equation for FinFET. The FinFET is extensively been studing since it can reduce the short channel effects as the nano device. We have presented the short channel effects such as subthreshold swing and threshold voltage for PinFET, using the analytical three dimensional Poisson's equation. We have analyzed for channel length, thickness and width to consider the structural characteristics for FinFET. Using this model, the subthreshold swing and threshold voltage have been analyzed for FinFET since the potential and transport model of this analytical three dimensional Poisson's equation is verified as comparing with those of the numerical three dimensional Poisson's equation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.693-695
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• 2012

This paper have presented the breakdown voltage for double gate(DG) MOSFET. The analytical solution of Poisson's equation and Fulop's breakdown condition have been used to analyze for breakdown voltage. The double gate(DG) MOSFET as the device to be able to use until nano scale has the adventage to reduce the short channel effects. But we need the study for the breakdown voltage of DGMOSFET since the decrease of the breakdown voltage is unavoidable. To approximate with experimental values, we have used the Gaussian function as charge distribution for Poisson's equation, and the change of breakdown voltage has been observed for device geometry. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result to observe the breakdown voltage, the smaller channel length and the higher doping concentration become, the smaller the breakdown voltage becomes. Also we have observed the change od the breakdown voltage for gate oxide thickness and channel thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.372-377
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• 2013

This paper have presented the breakdown voltage for double gate(DG) MOSFET. The analytical solution of Poisson's equation and Fulop's breakdown condition have been used to analyze for breakdown voltage. The double gate(DG) MOSFET has the advantage to reduce the short channel effects as improving the current controllability of gate. But we need the study for the breakdown voltage of DGMOSFET since the decrease of the breakdown voltage is unavoidable. To approximate with experimental values, we have used the Gaussian function as charge distribution for Poisson's equation, and the change of breakdown voltage has been observed for device geometry. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result to observe the breakdown voltage, the smaller channel length and the higher doping concentration become, the smaller the breakdown voltage becomes. Also we have observed the change of the breakdown voltage for gate oxide thickness and channel thickness.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.10a
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• pp.928-930
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• 2009

In this paper, the threshold voltage characteristics have been alanyzed using three dimensional Poisson's equation for FinFET. The FinFET is extensively been studing since it can reduce the short channel effects as the nano device. We have presented the short channel effects such as subthreshold swing and threshold voltage for FinFET, using the analytical three dimensional Poisson's equation. We have analyzed for channel length, thickness and width to consider the structural characteristics for FinFET. Using this model, the subthreshold swing and threshold voltage have been analyzed for FinFET since the potential and transport model of this analytical three dimensional Poisson's equation is verified as comparing with those of the numerical three dimensional Poisson's equation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.6
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• pp.1338-1342
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• 2011

In this paper, threshold voltage characteristics have been analyzed as one of short channel effects occurred in double gate(DG)MOSFET to be next-generation devices. The Gaussian function to be nearly experimental distribution has been used as carrier distribution to solve Poisson's equation, and threshold voltage has been investigated according to projected range and standard projected deviation, variables of Gaussian function. The analytical potential distribution model has been derived from Poisson's equation, and threshold voltage has been obtained from this model. Since threshold voltage has been defined as gate voltage when surface potential is twice of Fermi potential, threshold voltage has been derived from analytical model of surface potential. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the threshold voltage characteristics have been considered according to the doping profile of DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.4
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• pp.885-890
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• 2014

This paper has presented the change of subthreshold swings for gate oxide thickness of asymmetric double gate(DG) MOSFET, and solved Poisson equation to obtain the analytical solution of potential distribution. The Gaussian function as doping distribution is used to approch experimental results. The symmetric DGMOSFET is three terminal device. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine the bias voltage and oxide thickness for top and bottom gates. As a result to observe the subthreshold swings for the change of top and bottom gate oxide thickness, we know the subthreshold swings are greatly changed for gate oxide thickness. Especially we know the subthreshold swings are increasing with the increase of top and bottom gate oxide thickness, and top gate oxide thickness greatly influences subthreshold swings.