• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.2
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• pp.165-170
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• 2015

In this paper, we present design and measurement of LNA(Low Noise Amplifier) based on GaN HEMT(Gallium Nitride High Electron Mobility Transistor) to reduce the total noise figure of radar receiver and for robustness of LNA. In radar receiver using LNA based on GaAs(Gallium Arsenide) technology, limiter is necessary at the very front of the radar receiver to protect LNA. As a result, total noise figure of radar receiver is deteriorated. In this research, measured noise figure of LNA based on GaN HEMT is below 2 dB. In the case of commercialized GaAs LNA, recommended maximum input power is about 30 dBm. On the other hand, GaN HEMT LNA which is designed and measured is burned-out when input power is 43 dBm and robustness is guaranteed at input power 45.4 dBm.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.6
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• pp.1158-1165
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• 2004

This paper describes the design of a two stage 1V power supply SiGe Low Noise Amplifier operating at 5.25㎓ for 802.lla wireless LAN application. The achieved performance includes a gain of 17㏈, noise figure of 2.7㏈, reflection coefficient of 15㏈, IIP3 of -5㏈m, and 1-㏈ compression point of -14㏈m. The total power consumption of the circuit was 7㎽ including 0.5㎽ for the bias circuit.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.829-831
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• 2012

본 논문은 차량 추돌 예방 레이더용 고 이득 저전력 저잡음 특성을 가진 24GHz 저잡음 증폭기(LNA)를 제안한다. 이러한 회로는 TSMC $0.13{\mu}m$ 혼성신호/고주파 CMOS 공정($f_T/f_{MAX}=120/140GHz$)으로 설계되어 있다. 증폭기의 전압 이득을 향상시키기 위해 2단 캐스코드 구조로 구성되어 있다. 제안한 저잡음 증폭기는 최근 발표된 연구결과에 비해 41dB의 가장 높은 전압이득과 3.7dB의 가장 낮은 잡음지수 및 2.8dBm의 가장 우수한 IIP3 특성을 각각 보였다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.7
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• pp.713-721
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• 2004

This paper presents a high Performance LNA based on InGaP/GaAs HBT for 5.4㎓ WAM band applications. During the past days, InGaP/GaAs HBT has been being used for mainly high power amplifiers, but InCaP/GaAs is recognized as a suitable device for RF single chip. At this point, the research about a high performance LNA based on InGaP/GaAs HBT must be preceded, and in this paper, a excellent linearity and noise characteristics LNA based on InGaP/GaAs HBT is desisted and fabricated. The LNA is integrated in new of 0.9${\times}$0.9$\textrm{mm}^2$ single chip with high Q spiral inductors and MIM capacitors. The proposed LNA is biased at current point for optimum noise figure and gain characteristics, futhermore, excellent linearity is achieved. The proposed LNA shows 13㏈ gain, 2.1㏈ noise figure, and excellent linearity in terms of IIP3 of 5.5㏈m.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.4
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• pp.897-904
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• 2011

In this paper, a novel circuit topology of a low-noise amplifier tunable at 1.8GHz band for PCS and 2.4GHz band for WLAN using a CMOS active inductor is proposed. This circuit topology to reduce higher noise figure of the low noise amplifier with the CMOS active load is analyzed. Furthermore, the noise canceling technique is adopted to reduce more the noise figure. The noise figure of the proposed circuit topology is analyzed and simulated in $0.18{\mu}m$ CMOS process technology. Thus, the simulation results exhibit that the noise performance enhancement of the tunable low noise amplifier is about 3.4dB, which is mainly due to the proposed new circuit topology.

• Journal of Korea Multimedia Society
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• v.6 no.1
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• pp.161-166
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• 2003

This paper presents a high gain LNA for a bluetooth application using 0.25$\mu\textrm{m}$ CMOS technology. The conventional one stage LNA has a low power gain. The presented one stage LNA using a cascode inverter LNA with a voltage reference and without a choke inductor has an improved Power gain. Simulation results of the 2.4GHz designed LNA shows a high power gain of 21dB, a noise figure of 2.2dB, and the power consumption of 255mW at 2.5V power supply.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.209-212
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• 2002

본 논문에서는 위성방송 수신용 광대역 저잡음 증폭기를 설계 및 구현하였다. 전산모의 실험용 소프트웨어를 사용하여 저잡음 증폭기를 설계하였고, 제작된 저잡음 증폭기의 전기적 특성을 네트워크 분석기와 Noise Figure 분석기를 사용하여 측정하였다. LNA단의 Noise Figure에 중점을 두고 샘플을 제작하여 측정한 길과 전산모의실험에서 나온 데이터는 0.46㏈이하였고 전체 시스템에서 측정된 Noise figure는 0.6㏈정도의 좋은 길과를 나타내었지만, 반면에 이득과 반사손실의 결과가 약간 떨어짐을 보였다 위성 인터넷 등 위성을 이용하는 통신 인구의 급격한 증가와 더불어 구현된 저잡음 증폭기를 사용한 LNB(Low Noise Block down converter)가 널리 응용될 것으로 기대된다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.5
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• pp.1089-1095
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• 2005

This paper presents a new low-cost Built-In Self-Test (BIST) circuit for 50Hz low noise amplifier (LNA). The BIST circuit is designed for system-on-chip (SoC) transceiver environment. The proposed BIST circuit measures the LNA specifications such as input impedance, voltage gaih, noise figure, and input return loss all in a single SoC environment.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.2 no.3
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• pp.353-358
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• 1998

This paper presents development of a LNA operating at 1.71 ∼ 1.18 GHz used for a receiver of KOREA PCS base station and transponder. Using resistive decoupling circuits, a signal at low frequency is dissipated by a resistor. This design method increases the stability of the LNA and suitable for input stage matching. The LNA consists of low noise GaAs FET ATF-10136 and internally matched VNA-25. The LNA is fabricated with both the RF circuit and the self-bias circuits in aluminum housing. As a result, the characteristics of the LNA implemented here shows 30 dB in gain and 0.85 dB in noise figure.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.2
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• pp.53-57
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• 2017

This paper proposes a 401MHz-406MHz low noise amplifier for MedRadio applications. The proposed low noise amplifier adopts a common gate amplifier topology using current reuse gm-boosting technique. The proposed low noise amplifier shows better performance of voltage gain and noise figure than the conventional gm-boosted common gate amplifier in the same power consumption. The proposed current-reuse gm-boosted low noise amplifier achieves a voltage gain of 22 dB, a noise figure of 2.95 dB, and IIP3 of -17 dBm while consuming $170{\mu}W$ from a 0.5 V supply voltage in $0.13{\mu}m$ CMOS process.