Journal of the Korea Institute of Information and Communication Engineering (한국정보통신학회논문지)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
권호 표지

Design of a Low Noise Amplifier for Wireless LAN

무선 근거리 통신망용 저잡음 증폭기의 설계

  • 류지열 (애리조나주립대학교 전기공학과) ;
  • 노석호 (안동대학교 전자공학과) ;
  • 박세현 (안동대학교 전자공학과)
  • Published : 2004.10.01
Download PDF
⟨ Previous Next ⟩

Abstract

This paper describes the design of a two stage 1V power supply SiGe Low Noise Amplifier operating at 5.25㎓ for 802.lla wireless LAN application. The achieved performance includes a gain of 17㏈, noise figure of 2.7㏈, reflection coefficient of 15㏈, IIP3 of -5㏈m, and 1-㏈ compression point of -14㏈m. The total power consumption of the circuit was 7㎽ including 0.5㎽ for the bias circuit.

본 논문에서는 802.11a 무선 근거리 통신망 (wireless LAN)에서 사용 가능한 5.25㎓ SiGe 저잡음 증폭기(LNA)를 제안한다. 본 저잡음 증폭기는 2단 구조로 1V의 공급전압에서 동작하며, 0.18$\mu\textrm{m}$ SiGe 공정으로 제작되었다. 이 저잡음 증폭기의 경우 5.25㎓의 동작주파수에서 17㏈의 전압이득, 2.7㏈의 잡음지수, -l5㏈의 반사계수, -5㏈md의 IIP3 및 -14㏈m의 1㏈ compression point와 같은 우수한 동작특성을 보였으며, 바이어스 회로에서 소모되는 0,5㎽를 포함하여 전체회로에서 소모되는 총 전력은 7㎽이다.

Keywords

References

  1. T.H Lee, H. Samavati, H.R. Rategh, '5-GHz CMOS wireless LANs,' IEEE Transactions on Microwave Theory and Techniques, Vol. 50, No. I, pp. 268-280, Jan. 2002 https://doi.org/10.1109/22.981280
  2. F.K. Chai, T.R. Reuter, D.Z. Baker, J. Kirchgessner, 'Outstanding noise characteristics of SiGe: C HBT allow flexibility in high-frequency RF designs,' 2003 IEEE Radio Frequency Integrated Circuits(RFIC) Symposium, pp. 151-154, June 2003
  3. T.K.K. Tsang, M.N. EI-Gamal, 'A fully integrated IV 5.8 GHz bipolar LNA,' The 2001 IEEE International Symposium on Circuits and Systems, Vol. 4, pp. 842-845, May 2001
  4. M. Soyuer, J.O. Plouchart, H. Ainspan, J. Burghartz, 'A 5.8GHz 1V Low Noise Amplifier in SiGe Bipolar Technology,'1997 RFIC Symposium, pp. 19-22, 1997
  5. G. Schuppener, M. Mokhtari, B. Kerzar, 'A 5.8 GHz low noise amplifier for wireless LAN applications in silicon bipolar technology,' The 6th IEEE Int. Conference on Electronics, Circuits and Systems, Vol. 2, pp. 773-776, Sept. 1999
  6. T.K.K. Tsang, M.N. EI-GamaI Gain and frequency controllable sub 1V 5.8 GHz CMOS LNA, 2002 IEEE International Symposium on Circuits and Systems, Vol. 4, pp. 795-798, May 2002
  7. H.A. Ainspan, C.S. Webster, 'Measured results on bandgap reference in SiGe BiCMOS,' Electronics Letters, Vol. 34, No. 15, pp. 1441-1442, July 1998 https://doi.org/10.1049/el:19981061
  8. RF CMOS IC Design Guidelines, CRAFT Project, CMOS RF Circuit Design for Wireless Application
  9. L. Qingqing, N. Guofu, J.D. Cressler, S. Taylor, D.L. Harame, 'Geometry and bias current optimization for SiGe HBT cascode low-noise amplifiers,' 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, pp. 407-410, June 2002
  10. RF Microelectronics,B.Razhavi, Prentice Hall, 1998
  11. R. Plana, 'SiGe Technologies for Wireless Microwave and millimeter-Wave Applications,' 2002 22nd International Conference on Microelectronics, Vol 2, pp. 415-422, May 2000
  12. Radio Frequency Integrated Circuit Design, Calvin Plett, John Rogers, Miles A. Copeland Artech House, 2003