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http://dx.doi.org/10.6109/jkiice.2011.15.4.897

Study on Noise Performance Enhancement of Tunable Low Noise Amplifier Using CMOS Active Inductor  

Sung, Young-Kyu (고려대학교 대학원 전자정보공학과)
Yoon, Kyung-Sik (고려대학교 전자및정보공학과)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.15, no.4, 2011 , pp. 897-904 More about this Journal
Abstract
In this paper, a novel circuit topology of a low-noise amplifier tunable at 1.8GHz band for PCS and 2.4GHz band for WLAN using a CMOS active inductor is proposed. This circuit topology to reduce higher noise figure of the low noise amplifier with the CMOS active load is analyzed. Furthermore, the noise canceling technique is adopted to reduce more the noise figure. The noise figure of the proposed circuit topology is analyzed and simulated in $0.18{\mu}m$ CMOS process technology. Thus, the simulation results exhibit that the noise performance enhancement of the tunable low noise amplifier is about 3.4dB, which is mainly due to the proposed new circuit topology.
Keywords
CMOS active inductor; tunable low noise amplifier; noise canceling technique; noise performance;
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1 Chao-Chin Hsiao et al., "Improved Quality-Factor of 0.18-${\mu} m$ CMOS Active Inductor by a Feedback Resistance Design," IEEE Microwave and Wireless Components Letters, Vol. 12, No. 12, pp. 467-469, Dec. 2002.   DOI   ScienceOn
2 F. Bruccoleri, E.A.M. Klumperink, and B. Nauta, "Wide-band CMOS low-noise amplifier exploiting thermal noise canceling," IEEE J. Solid-State Circuits, Vol. 39, No. 2, pp. 275-282, Feb. 2004.   DOI   ScienceOn
3 성영규, 석사학위논문, 고려대학교 2009.
4 B. Razavi, RF Microelectronics, Prentice Hall, 1998.
5 C.-F. Liao, and S.-I. Liu, "A Broadband Noise-Canceling CMOS LNA for 3.1-10.6-GHz UWB Receivers," IEEE J. Solid-State Circuits, Vol. 42, No. 2, pp. 329-339, Feb. 2007.   DOI   ScienceOn
6 A. Thanachayanont, and A. Payne, "A 3-V RF CMOS Bandpass Amplifier Using An Active Inductor," IEEE International Symposium on Circuits and Systems, Vol. 1, pp. 440-443, 1998.
7 Yuyu Chang, J. Choma, Jr., and J. Wills, "A 900 MHz active CMOS LNA with a bandpass filter," Mixed-Signal Design, SSMSD'99, pp. 33-36, 1999.
8 Y.Taur and T.H.Ning, Fundamentals of Modern VLSI Devices, Cambridge, U.K.: Cambridge Univ. Press, 1998.
9 A. Thanachayanont, and A. Payne, "VHF CMOS integrated active inductor," Electronics Letters, Vol. 32, No. 11, pp. 999-1000, May, 1996.   DOI   ScienceOn
10 S. Wu and B. Razavi, "A 900MHz/1.8GHz CMOS receiver for dual-band applications", IEEE International Solid-State Circuits, Vol. 33, pp. 2178- 2185, 1998.   DOI   ScienceOn
11 Chong-Ru Wu and Liang-Hung Lu, "A 2.9-3.5-GHz tunable low-noise amplifier", IEEE Silicon Monolithic Integrated Circuits in RF Systems, pp. 206-209, 2006.
12 Jhy-Neng Yang, Yi-Chang Cheng, Terng-Yin Hsu, Terng-Ren Hsu, and Chen-Yi Lee, "A 1.75 GHz inductor-less CMOS low noise amplifier with high-Q active inductor load," Circuits and Systems, MWSCAS, Vol. 2, pp. 816-819, 2001.
13 Jhy-Neng Yang, Yi-Chang Cheng, and Chen-Yi Lee, "A design of CMOS broadband amplifier with high-Q active inductor," Proc. 3rd IEEE International Workshop on System-on-Chip for Real-Time Applications, pp. 86-89, Jul. 2003.
14 M-J. Wu, P-J. Yen, C-C. Chou, and J-T Yang, "A radio frequency CMOS band pass amplifier using high-Q active inductor loads with binary code for multi-band selecting," Proc. 6th WSEAS Int. Conf. on Instrumentation, Measurement, Circuit and System, pp. 138-143, Apr. 2007.