• Title/Summary/Keyword: 장벽

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The Effect of Career Identity and Krumboltz's Task Approach Skills on Career Maturity, Career Barriers, and Career Aspiration (진로정체감과 Krumboltz의 과제접근기술이 진로성숙도, 진로장벽, 진로포부에 미치는 영향)

  • Kim, Kyoung-Mi;Bae, Young-Kwang;Min, Yi-Seul;Jang, Sung-Hwa
    • The Journal of the Korea Contents Association
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    • v.14 no.11
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    • pp.497-508
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    • 2014
  • The current study examined the relationships between task-approach skills of optimism, bearability, intolerance of uncertainty, career identity, career maturity, career barriers, and career aspiration. Data was collected from two-hundred sixty nine college students who matriculated in colleges located in Seoul, Gyeoungi and Chungchung provinces in Korea. The correlation analysis and multiple linear regression were carried out to explore the relationship among the variables mentioned above. The results of this study were as follows: First, career identity was positively correlated with career maturity, aspiration and negatively with career barrier. optimism was negatively correlated with career barrier. in addition, intolerance of uncertanity was positively correlated with career maturity. and negatively with career barriers. Second, multiple linear regression revealed that career identity, optimism and lacking intolerance of uncertanity significantly influenced career maturity, career identity, optimism and intolerance of uncertanity significantly influnced career barriers. In addition, only optimism influnced career aspiration. These findings implied that career counselors need to assist clients developing optimism, flexibility, bearability and counselors should be aware of the effect of task-approach skills on career, barriers, and aspiration. Further discussions regarding results are included.

An Analysis of the Relationship between Career Barrier and Career Maturity of the Adolescents (청소년의 진로장벽과 진로성숙도간의 관계분석)

  • Song, Byeong Kug;Jeon, Ju Yeon
    • Journal of Agricultural Extension & Community Development
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    • v.20 no.1
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    • pp.235-264
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    • 2013
  • The purpose of this study was to investigate the relationship between career barrier and career maturity of the adolescents who were concretely worried about their career and occupation. 672 middle school students were participated to analyze the Pearson Correlation and Multiple Regression Analyses with data collected by the questionnaire. This study revealed the following results. First, the correlational analysis showed that career barrier associated negatively with career maturity. Second, the multiple regression analysis revealed that sub-elements of career barrier which the adolescents conceived, such as the shortage of self-understanding, the shortage of self-reliance, gender-role conflict and gender discrimination, and the shortage of career and occupational information were significantly effecting their career maturity. Third, as a result of multiple regression analysis to estimate the explanability of career barrier on career maturity, career barrier among various independent factors which were correlated statistically with career maturity showed most effects on it. Also, school academic achievement was confirmed as a significant factor effecting the career maturity. Above these results imply that the perception on the career barrier of the adolescent should be reduced for increasing the career maturity. For this, career education and counselling should be positively intervened and reinforced through the school curriculum and activities.

A Structural Analysis of Relations among Inner and Outer Career Barrier, Career Decision Making Self-Efficacy, Career Aspiration and Career Decision Status for College Student (대학생의 내·외적 진로장벽, 진로결정 자기효능감, 진로포부, 진로결정수준 간의 구조적 관계 분석)

  • Ko, Mi-Na;Park, Jae-Hwang
    • Journal of vocational education research
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    • v.30 no.4
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    • pp.259-279
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    • 2011
  • The purpose of this study was to analyze a structural relations which occur when college students' inner and outer career barrier impacts on career decision status through the mediating variables of career decision making self-efficacy and career aspiration. The data of 787 college students subjects were collected for the study. The measuring tools were Career Decision Status, Outer Career Barriers, Inner Career Barriers, Career Aspiration, and Career Decision Making Self-Efficacy. The collected data were analyzed with structural equation modeling(SEM). The findings of the study were as follows. Results showed that only inner career barriers affect career decision status through the mediating variables of career decision making self-efficacy and career aspiration among outer and inner career barriers anticipated to give negative impact on level of career decision making. Inner career barriers affect career decision making self-efficacy negatively, and career decision making self-efficacy gives positive impact on career aspiration, and career aspiration affects career decision status negatively. In other words, the more aware of inner career barriers, the lower career decision making self-efficacy.

A Study on the utilization plan of Mutual Recognition Agreement for Korea-China FTA: Focused on TBT and Conformity Assessment (한중 FTA체결에 따른 정부의 MRA 활용 방안에 관한 연구 -TBT 및 적합성평가를 중심으로-)

  • Jun, Byoung Ho;Kang, Byung Goo
    • International Commerce and Information Review
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    • v.17 no.3
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    • pp.177-201
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    • 2015
  • Korea-China FTA was initialized in 2015. Korea has a high level of dependence on trade for its economic growth, especially to China. Technical Barriers to Trade(TBT) among various non-tariff barriers is becoming increasingly important. Elimination of TBT is one of the key issues in which the South Korean government is interested since technical barriers significantly affect trade between the two countries. MRA has been considered as an effective tool to relieve such technical barriers. Several studies and surveys showed that MRA would mitigate the barriers of import and solve the problems that many companies face in international market. This study tries to seek utilization plan of MRA for Korea-China FTA. It suggests suitable utilization plan of MRA considering the difference of technical regulations between two countries. This paper has value in that it provides specific MRA strategies targeting China while other prior studies have merely analyzed the necessity of MRA.

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Dependence of Drain Induced Barrier Lowering for Ratio of Channel Length vs. Thickness of Asymmetric Double Gate MOSFET (비대칭 DGMOSFET에서 채널길이와 두께 비에 따른 DIBL 의존성 분석)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.19 no.6
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    • pp.1399-1404
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    • 2015
  • This paper analyzed the phenomenon of drain induced barrier lowering(DIBL) for the ratio of channel length vs. thickness of asymmetric double gate(DG) MOSFET. DIBL, the important secondary effect, is occurred for short channel MOSFET in which drain voltage influences on potential barrier height of source, and significantly affects on transistor characteristics such as threshold voltage movement. The series potential distribution is derived from Poisson's equation to analyze DIBL, and threshold voltage is defined by top gate voltage of asymmetric DGMOSFET in case the off current is 10-7 A/m. Since asymmetric DGMOSFET has the advantage that channel length and channel thickness can significantly minimize, and short channel effects reduce, DIBL is investigated for the ratio of channel length vs. thickness in this study. As a results, DIBL is greatly influenced by the ratio of channel length vs. thickness. We also know DIBL is greatly changed for bottom gate voltage, top/bottom gate oxide thickness and channel doping concentration.

$Al_2O_3/HfO/Al_2O_3$ 터널장벽 $WSi_2$ 나노 부유게이트 커패시터의 전기적 특성

  • Lee, Hyo-Jun;Lee, Dong-Uk;Han, Dong-Seok;Kim, Eun-Gyu;Yu, Hui-Uk;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.191-192
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    • 2010
  • 높은 유전상수를 가지는 터널 장벽물질 들은 플래쉬메모리 및 나노 부유게이트 메모리 소자에서 터널의 두께 및 밴드갭 구조의 변형을 통하여 단일층의 $SiO_2$ 터널장벽에 비하여 동작속도를 향상시키고 누설전류를 줄이며 전하보존 특성을 높여줄 수 있다.[1-3] 본 연구에서는 $Al_2O_3/HfO/Al_2O_3$구조의 고 유전체 터널장벽을 사용하여 $WSi_2$ 나노입자를 가지게 되는 metal-oxide-semiconductor(MOS)구조의 커패시터를 제작하여 전기적인 특성을 확인하였다. p형 (100) Si기판 위에 $Al_2O_3/HfO/Al_2O_3$ (AHA)의 터널장벽구조를 원자층 단일 증착법을 이용하여 $350^{\circ}C$에서 각각 2 nm/1 nm/3 nm 두께로 증착시킨 다음, $WSi_2$ 나노입자를 제작하기 위하여 얇은 $WSi_2$ 박막을 마그네트론 스퍼터링법으로 3 - 4 nm의 두께로 증착시켰다. 그 후 $N_2$분위기에서 급속열처리 장치로 $900^{\circ}C$에서 1분간의 열처리과정을 통하여 AHA로 이루어진 터널 장벽위에 $WSi_2$ 나노입자들이 형성할 수 있었다. 그리고 초 고진공 마그네트론 스퍼터링장치로 $SiO_2$ 컨트롤 절연막을 20 nm 증착하고, 마지막으로 열 증기로 200 nm의 알루미늄 게이트 전극을 증착하여 소자를 완성하였다. 그림 1은 AHA 터널장벽을 이용한 $WSi_2$ 나노 부유게이트 커패시터 구조의 1-MHz 전기용량-전압 특성을 보여준다. 여기서, ${\pm}3\;V$에서 ${\pm}9\;V$까지 게이트전압을 점차적으로 증가시켰을 때 메모리창은 최대 4.6 V로 나타났다. 따라서 AHA의 고 유전체 터널층을 가지는 $WSi_2$ 나노입자 커패시터 구조가 차세대 비 휘발성 메모리로서 충분히 사용가능함을 보였다.

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다층 그래핀과 유기물로 구성된 계면의 전자분광학 분석을 이용한 에너지 준위 정렬 분석

  • Seo, Jae-Won;Kim, Ji-Hun;Gwon, Dae-Gyeon;Maeng, Min-Jae;Mun, Je-Hyeon;Lee, Jeong-Ik;Choe, Seong-Ryul;Kim, Taek-Yeong;Park, Yong-Seop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.163-163
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    • 2013
  • 최근 들어서 유연 OLED (Organic Light-Emitting Diodes) 소자에 대한 연구가 증가하면서 전통적인 ITO 전극을 대체할 수 있는 전극물질 후보로 그래핀이 많은 주목을 받고 있다. 그 중에 CVD 방법으로 합성된 다층 그래핀(Few layer graphene, FLG)은 실제 상용화되는 소자에 응용이 될 가능성이 높아 많은 연구가 이 방향으로 진행되고 있다. 이 연구에서는 다층 그래핀과 유기물질 사이의 계면을 전자분광학 분석을 이용해 각 분자층 사이의 에너지 준위 변화에 대해 분석했다. 에너지 준위 정렬을 이용하면 각 분자층간의 정공주입 에너지장벽을 알 수 있는데 이 에너지 장벽은 소자의 효율에 직접적으로 연관되는 값이다. 정공 주입층 물질로는 TAPC 1,1- Bis[4-[N,N'-di(p-tolyl)amino]phenyl]cyclohexane (TAPC)를 사용했고, 다층 그래핀과 TAPC층 사이의 에너지 준위 정렬을 분석한 결과 다층 그래핀과 TAPC층 사이에는 ~1.4 eV의 에너지 장벽이 존재함을 확인했다. 하지만 OLED 소자로 활용하기 위해서는 이보다 더 낮은 에너지 장벽을 필요로 하기 때문에 두 물질 사이에 4,4'-bis(N-phenyl-1-naphthylamino)biphenyl (NPB), 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN)을 삽입하여 에너지 장벽을 낮추기 위한 시도를 해 보았다. 그래핀과 TAPC 사이에 중간층으로 NPB를 사용했을 때의 에너지 장벽은 0.55 eV, HAT-CN을 사용했을 때는 0.4 eV로 TAPC만 사용했을 때보다 ~1 eV정도 에너지 장벽을 낮추는 효과를 보여줬다. 이 연구를 통해 다층 그래핀을 OLED 소자의 전극으로 활용할 수 있는 가능성을 볼 수 있었다.

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The Effect of a Group Program Designed to Resolve the Psychological Career Barriers of University Freshmen on Their Psychological Career Barriers, Self-Efficacy in Career Decision-Making, and Self-Determination (대학 신입생을 위한 심리적 진로장벽 해소 집단프로그램이 심리적 진로장벽, 진로결정 자기효능감과 자기결정성에 미치는 효과)

  • Lee, Mi-Young
    • Journal of Digital Convergence
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    • v.16 no.10
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    • pp.485-496
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    • 2018
  • This study set out to organize and apply a group program designed to resolve the psychological career barriers of university freshmen and test its effects on their psychological career barriers, self-efficacy in career decision-making, and self-determination. For this purpose, the investigator divided the subjects into a treatment group of eight and a comparison group of nine, implemented a group program designed to resolve psychological career barriers over seven sessions, and applied no treatment to the comparison group. In an effort to examine the program's effects, the investigator conducted tests on psychological career barriers, self-efficacy in career decision-making, and self-determination in the pre- and post-test both in the treatment and comparison groups and examined the differences between them. The findings were as follows: first, the treatment group made a significant decrease to its psychological career barriers scores compared to the comparison group; second, the treatment group made a significant increase to its self-efficacy in career decision-making scores compared to the comparison group; and finally, the treatment group also made a significant increase to its self-determination scores compared to the comparison group with a significant enhancement. That is, the program was effective for lowering the psychological career barriers of university freshmen and improving their self-efficacy in career decision-making and self-determination. The study also discusses the utilization of its findings and future study.

Analysis of Drain Induced Barrier Lowering for Double Gate MOSFET According to Channel Doping Concentration (채널도핑강도에 대한 이중게이트 MOSFET의 DIBL분석)

  • Jung, Hak-Kee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.3
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    • pp.579-584
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    • 2012
  • In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET. The DIBL is very important short channel effects as phenomenon that barrier height becomes lower since drain voltage influences on potential barrier of source in short channel. The analytical potential distribution of Poisson equation, validated in previous papers, has been used to analyze DIBL. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. The change of DIBL has been investigated for device parameters such as channel thickness, oxide thickness and channel doping concentration.

Underwater Acoustic Barrier with Passive Ocean Time Reversal and Application to Underwater Detection (수동형 해양 시역전 수중음향장벽과 수중탐지에의 응용)

  • Shin, Keecheol;Kim, Jeasoo
    • The Journal of the Acoustical Society of Korea
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    • v.31 no.8
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    • pp.551-560
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    • 2012
  • Target detection by acoustic barrier method includes active and passive sonar technique and time reversal process whose theoretical background is already well defined. In this paper, the concept and theory of underwater detection by passive ocean time reversal is established. Also, the reason that this study was conducted was to investigate feasibility of complex mathematical modeling to provide some predictive capability for underwater acoustic barrier with passive time reversal. It may eventually lead to a useful predictive tool when designing underwater acoustic barrier detection system using the passive time reversal concept.