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http://dx.doi.org/10.6109/jkiice.2015.19.6.1399

Dependence of Drain Induced Barrier Lowering for Ratio of Channel Length vs. Thickness of Asymmetric Double Gate MOSFET  

Jung, Hakkee (Department of Electronic Engineering, Kunsan National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.19, no.6, 2015 , pp. 1399-1404 More about this Journal
Abstract
This paper analyzed the phenomenon of drain induced barrier lowering(DIBL) for the ratio of channel length vs. thickness of asymmetric double gate(DG) MOSFET. DIBL, the important secondary effect, is occurred for short channel MOSFET in which drain voltage influences on potential barrier height of source, and significantly affects on transistor characteristics such as threshold voltage movement. The series potential distribution is derived from Poisson's equation to analyze DIBL, and threshold voltage is defined by top gate voltage of asymmetric DGMOSFET in case the off current is 10-7 A/m. Since asymmetric DGMOSFET has the advantage that channel length and channel thickness can significantly minimize, and short channel effects reduce, DIBL is investigated for the ratio of channel length vs. thickness in this study. As a results, DIBL is greatly influenced by the ratio of channel length vs. thickness. We also know DIBL is greatly changed for bottom gate voltage, top/bottom gate oxide thickness and channel doping concentration.
Keywords
asymmetric double gate; drain induced barrier lowering; channel length; channel thickness;
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Times Cited By KSCI : 1  (Citation Analysis)
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