• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.32 no.8
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• pp.29-36
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• 2004

Supersonic inlet buzz can be defined as unstable subcritical operation associated with fluctuating internal pressures and a shock pattern oscillating about the inlet entrance. The flow pulsations could result in flameout in the combustor or even structural damage to the engine. An experimental study was conducted to investigate the phenomenon of supersonic inlet buzz on axisymmetric, external-compression inlet. An inlet model with a cowl lip diameter of 30mm was tested at a free stream Mach number of 2.0. Subcritical instability was investigated by considering the frequency of pressure pulsation and shock wave structure at the inlet entrance. The results obtained show that total pressure recovery ratios were varied from 0.42 to 0.78, and capture area ratio from 0.34 to 0.98. The frequency of the subcritical flow increased with decrease in capture area ratios. Frequency was measured at $224{\sim}240Hz$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.5
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• pp.719-726
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• 1999

Multiconductor transmission line(MTL) equations are solved by FDTD method to examine the coupling between incident electromagnetic fields and multiconductor transmission lines. The measurement of induced voltages on UTP Category 5 and STP Category 5 cables which are used as LAN cables is carried out using a TEM cell where uniform and strong TEM fields can be established. The comparison between measured and simulated results shows good agreement. It is also found that grounding of shield foil at both terminations and small grounding resistance give good shielding effects for STP Category 5.

• Electrical & Electronic Materials
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• v.6 no.4
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• pp.330-338
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• 1993

Channel의 폭과 길이가 15 x 15.mu.m, 15 x 1.5.mu.m, 1.9 x 1.7.mu.m인 비휘발성 SNOSFET EEPROM 기억소자를 CMOS 1 Mbit 설계규칙에 의하여 제작하고 체널크기에 따른 $I_{D}$- $V_{G}$특성 및 스위칭 특성을 조사하여 비교하였다. 게아트에 전압을 인가하여 질화막에 전하를 주입시키거나 소거시킨 후 특성을 측정한 결과, 드레인전류가 적게 흐르는 저전도상태와 전류가 많이 흐르는 고전도상태로 되는 것을 확인하였다. 15 x 15.mu.m의 소자는 전형적인 long channel특성을 나타냈으며 15 x 1.5.mu.m, 1.9 x 1.7.mu.m는 short channel특성을 보였다. $I_{D}$- $V_{G}$ 특성에서 소자들의 임계 문턱전압은 저전도상태에서 $V_{W}$=+34V, $t_{W}$=50sec의 전압에서 나타났으며 메모리 윈도우 폭은 15 x 15.mu.m, 15 x 1.5.mu.m, 1.9 x 1.7.mu.m의 소자에서 각각 6.4V, 7.4V, 3.5V였다. 스위칭 특성조사에서 소자들은 모두 논리스윙에 필요한 3.5V 메모리 윈도우를 얻을 수 있었으며 논리회로설계에 적절한 정논리 전도특성을 가졌다.특성을 가졌다.다.다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.10
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• pp.52-62
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• 2003

This paper discusses ternary logic gate, ternary D flip-flop, and ternary four-digit parallel input/output register. The ternary logic gates consist of n-channel pass transistors and neuron MOS(νMOS) threshold inverters on voltage mode. They are designed with a transmission function using threshold inverter that are in turn, designed using Down Literal Circuit(DLC) that has various threshold voltages. The νMOS pass transistor is very suitable gate to the multiple-valued logic(MVL) and has the input signal of the multi-level νMOS threshold inverter. The ternary D flip-flop uses the storage element of the ternary data. The ternary four-digit parallel input/output register consists of four ternary D flip-flops which can temporarily store four-digit ternary data. In this paper, these circuits use 3.3V low power supply voltage and 0.35m process parameter, and also represent HSPICE simulation result.

• Journal of Satellite, Information and Communications
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• v.10 no.2
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• pp.90-94
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• 2015

We stuidied liauid crystal alignment treatment using solution process for making thin oxide layer in liquid crystal display. It is the one of very effient and popular process in making thin oxide layer in electronical industrial fields. Particularly, this process has highly potential value in liquid crystal display industrial fields because it cause automatically induced alignment process without tranditional alignment process in liquid crystal alignment process. We made several different kinds of mol density solutions using strontium oxide solution. And those solutions were treated for solidification layers using annealing process for 2 hours. And we stuided pretilt angle properties of these alignment layers of strontium oxide for clarifying the relationship of liquid crystal molecules and thin strontium oxide layer. And we also tested the existence of strontium oxide thin layer on substrate using XPS measurement. We expected the hig gain of electro-optical properties in liquid crystal display using strontium oxide thin layer because it has high K property material than the other metal-based oxide layers. In this results, we measured 1.447 to 1.613 thresholds volts as 0.1 mol to 0.4 mol density in 0.1 mol density steps. This is significant better characteristics than conventional liquid crystal display as higher than 1.85 thresholds volts. And it make possible to making next-generation liquid crystal display which present low-power consumption and wide gray scale in liquid crystal display.

• Korean Journal of Materials Research
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• v.1 no.2
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• pp.65-70
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• 1991

The effect of inclusion particles on the microstructure development and electrical characteristics in the systems $ZnO-Bi_2O_3-CoO-Sb_2O_3\;and\;ZnO-Bi_2O_3-CoO-Sb_2O_3-Cr_2O_3 were investigated. The growth of ZnO grains, which was controlled by the spinel particles during sintering, decreased with increasing amount of spinel particles. Addition of $Cr_2O_3(0.5mol\%) increased the breakdown voltage without affecting the non-linear characteristics. The calculated barrier voltage of the $ZnO-Bi_2O_3-CoO-Sb_2O_3\;-and\;ZnO-Bi_2O_3-CoO-Sb_2O_3-Cr_2O_3$ systems were about 3.1V and 2.9V, respectively.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.6
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• pp.34-43
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• 2008

The state-space average model is extended to buck-boost, and buck-boost topology switching mode DC/DC converters and modified to have higher precision without increment of computation. The modified model is used in continuous conduction mode(CCM) switching DC/DC converters and some significant conclusions are derived. This paper discusses the discontinuous conduction mode(DCM) modeling of DC/DC converter and critical characteristic using average model of switch. Average model of switch approach is expended to the modeling of boundary conduction mode DC/DC converters that operate at the boundary between continuous conduction mode(CCM) and discontinuous conduction mode(DCM). Frequency responses predicted by the average model of switch are verified by simulation and experiment. A prototype featuring 15[V] input voltage, 24[V] output voltage, and 24[W] output power using MOSFET.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1133-1136
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• 1995

RF-magnetron sputtering 방법으로 형성한 $BaTa_2O_6$의 공정변수에 따른 전기, 광학적 특성변화를 관찰하여 $BaTa_2O_6$ 박막의 TFELD(thin film electroluminescent display) 절연막으로서 응용 가능성을 연구하였다. $BaTa_2O_6$ 박막의 유전특성은 증착시의 $O_2$ 함량과 sputtering 압력의 변화에는 큰 영향을 받지 않으나 기판온도에는 영향을 받는 것으로 확인되었다. 이들 공정변수를 가변하여 실험한 결과, $BaTa_2O_6$ 박막 형성의 최적조건으로 플라즈마 압력을 6 mtorr, sputtering gas 내의 $O_2$ 혼합비율은 40%, 기판온도는 $100^{\circ}C$로 결정하였다. 이상의 조건에서 제조된 $BaTa_2O_6$ 박막은 10.2 ${\mu}C/cm^2$의 매우 우수한 성능지수를 보였다. 이상의 $BaTa_2O_6$ 박막을 하부절연층으로, 절연파괴강도가 높은 $SiO_xN_y$를 상부 절연층으로 사용하여 제조된 EL 소자는 1 kHz, 삼각파 구동시 발광 임계전압은 약 32 volts, 최대휘도는 54 $cd/m^2$으로 측정되었다.

• Korean Journal of Optics and Photonics
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• v.8 no.2
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• pp.116-121
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• 1997

The optical power drift due to temperature variation of a laser diode driven by constant voltage is different from one driven by constant current. When a laser diode is driven by constant current, the optical output decreases as the temperature increases because the population inversion decreases. However, When it is driven by constant voltage, injection current increases with temperature rise, which in turn increases the optical power. As the result, the optical power variation reduces. Experimental results show that when these two components are almost equal and cancel each other, the optical power variation coefficient is very small and the optical output is stable.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.798-799
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• 2008

초전도전력케이블에서 교류손실은 케이블의 효율을 저하시킬 뿐만 아니라 냉동기비용 증가로 인한 기존 케이블과의 가격경쟁에서 경제성을 저하시키는 주된 요인으로 작용하기 때문에 이의 상용화에 앞서 교류손실에 대한 정확한 규명이 되어야 한다. 그러나 다수본으로 구성되는 단층원통형의 고온초전도전력케이블에서 교류손실을 올바르게 평가하는 것은 테이프의 상이한 임계전류, 전압리드의 배열, 전류분포의 불균일성 및 인접한 테이프에 흐르는 전류위상 상이 등 복잡한 영향인자 때문에 매우 난해하다. 본 연구에서는 고온초전도전력케이블과 같은 단층원통형 고온초전도도체를 제작하여 실험적으로 교류손실 특성을 규명하였고, 또한 전류용량이 교류손실 특성에 미치는 영향을 실험적으로 조사하였다. 결과 원통형 고온초전도도체에서 교류손실 특성은 전류용량보다는 임계전류밀도에 더 의존하였다.