Browse > Article

Study of Properties of High-K Strontium Oxide Alignment Layer Using Solution Process for Low Power Mobile Information Device  

Han, Jeong-Min (서일대학교 전기과)
Kim, Won-Bae (송원대학교 전기전자공학과)
Publication Information
Journal of Satellite, Information and Communications / v.10, no.2, 2015 , pp. 90-94 More about this Journal
Abstract
We stuidied liauid crystal alignment treatment using solution process for making thin oxide layer in liquid crystal display. It is the one of very effient and popular process in making thin oxide layer in electronical industrial fields. Particularly, this process has highly potential value in liquid crystal display industrial fields because it cause automatically induced alignment process without tranditional alignment process in liquid crystal alignment process. We made several different kinds of mol density solutions using strontium oxide solution. And those solutions were treated for solidification layers using annealing process for 2 hours. And we stuided pretilt angle properties of these alignment layers of strontium oxide for clarifying the relationship of liquid crystal molecules and thin strontium oxide layer. And we also tested the existence of strontium oxide thin layer on substrate using XPS measurement. We expected the hig gain of electro-optical properties in liquid crystal display using strontium oxide thin layer because it has high K property material than the other metal-based oxide layers. In this results, we measured 1.447 to 1.613 thresholds volts as 0.1 mol to 0.4 mol density in 0.1 mol density steps. This is significant better characteristics than conventional liquid crystal display as higher than 1.85 thresholds volts. And it make possible to making next-generation liquid crystal display which present low-power consumption and wide gray scale in liquid crystal display.
Keywords
Solgel; Strontium Oxide; Liquid Crystal Display; liquid crystal; Alignment;
Citations & Related Records
연도 인용수 순위
  • Reference
1 Q.Chen at al, J. Am. "Chem. Soc." p. 136, 622 2014   DOI
2 Y.H. Jung, S.Y. Kim, H.-C. Jeong, H.-G. Park, D.-H. Kim, T.-W. Kim, and D.-S. Seo, "ECS Solid State Lett," p. 3, Q51 2014   DOI
3 P.S.Kumar, P.Paik, A.D.Raj, D.Mangalargj, D.Nataraj, "A.Gedanken and S.Ramakrishna, Appl. Surf. Sci.," p. 258, 6765 2012   DOI
4 Y.Lin, L.Ma, Y.Li, Y.Liu, D,Zhu, and X.Zhan, "Adv. Energy Mater." p. 4, 1300626 2014   DOI
5 H.-G. Park, H.-C. Jeong, J.-J, Han, S.Y. Kim, J.-H. Kim, D.-H. Kim, and D.-S. Seo, "J. Mater. Chem. C," p. 2, 3960 2014   DOI
6 S.Y. Kim, H.-G, Park, M.-J. Cho, H.-C. Jeong and D.S. Seo, "Liquid Crystals," p. 41, 940 2014   DOI
7 H. Miyata and K. "Kuroda, Chem. Mater." p. 11, 1609 1999   DOI
8 J. Chen, D. L. Johnson, P. J. Bos, X. Wang and J. L. West, "Phys. Rev. E" p. 54, 1599 1996   DOI
9 R. M. Hogan, A. R. Tajbakhsh and E. M. Terentjev, "Phys. Rev. E" p. 65, 041720 2002   DOI
10 S. Kubo, Z. Gu, K. Takahashi, A. Fujishima, H. Segawa and O. Sato, "Chem. Mater." p. 17, 2298 2005   DOI
11 K. Ichimura, Y. Akita, H. Akiyama, Y. Hayashi and K. Kudo, "Jpn. J. Appl. Phys." p. 35, L992 1996   DOI
12 Y. G. Kang, H. G. Park, H. J. Kim, Y. H. Kim, B. Y. Oh, B. Y. Kim, D. H. Kim and D. S. Seo, "Opt. Express" p. 18, 21594 2010   DOI
13 H, J. Na, J. W. Lee, W. K. Lee, J. H. Lim, H. G. Park, B. Y. Kim, J. Y. Hwang, J. M. Han and D. S. Seo, "Opt. Lett." p. 35, 1151 2010   DOI
14 H. G. Park, B. Y. Oh, Y. H. Kim, B. Y. Kim, J. M. Han, J. Y. Hwang and D. S. Seo, "Electrochem. Solid. St." p. 12, J37 2009   DOI
15 J..L.Jacobson, E.R.Nixon, "J.Phy, Chem, Solids," p. 29, 967 1968   DOI
16 V. Young and T. Otagawa, "Applications of Surface Science 20," p. 228 1985   DOI
17 S. Yang, J.-J. Lee, H.-J. Lee, Y.-G. Kang, H.-J. Kim, H.-Y. Jung and D.-S. "Seo Liquid Cyrstals," p. 39, 71 2012   DOI
18 Y.-G. Kang, H.-J. Kim, H.-G. Park, B.-Y. Kim and D.-S. Seo, "J. Mater. Chem. p." 22, 15969 2012   DOI