• Progress in Medical Physics
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• v.10 no.1
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• pp.17-22
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• 1999

INJ-I, INJ-E, PFN, BMI, and PRF were selected among the various factors which constitute a digital linear accelerator to find effects on the dose distribution by changing current and voltage within the permitted scale which Mevatron automatically maintained. We measured the absorbed dose using an ion chamber, analyzed the waveform of beam output using an oscilloscope, and measured symmetry and flatness using a dosimetry system. An RFA plus (Scanditronix, Sweden) device was used as a dosimetry system. Then an 0.6cc ion chamber (PR06C, USA), an electrometer (Capintec192, USA), and an oscilloscope (Tektronix, USA) were employed to measure the changes on the dose distribution characteristics by changing the beam-tuning parameters. When the currents and the voltages of INJ-I, INJ-E, PFN, BMI, and PRF were modified, we were able to see the notable change on the dose rate by examining the change of the output pulse using the oscilloscope and by measuring them using the ion chamber. However, the results of energy and flatness graph from RF A plus were almost identical. The factors had fine differences: INJ-I, INJ-E, PFN, BMI, and PRF had 0.01∼0.02% differences in D10/D20, 0.1∼0.2 % differences in symmetry, and 0.1∼0.4% differences in flatness. Since Mevatron controlled itself automatically to keep the reference value of the factor, it was not able to see large differences in the dose distribution. There were fine differences on the dose rate distribution when the voltage and the currents of the digitized factors were modified Nonetheless, a basic operational management information was achieved.

• Journal of the Korean Society for Marine Environment & Energy
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• v.14 no.1
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• pp.1-10
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• 2011

To understand characteristics of the water quality on the coastal boundary on tidal flat, field observations between 2008 and 2009 were undertaken twice a month at five coastal areas (Muan bay, Tando bay, Hampyeong bay, Shinan Jido and Yeongkwang coastal areas). Yearly water temperature difference was large with the range between $1.3^{\circ}C$ and $31.1^{\circ}C$. Salinity was about 32 but was the lower less than 20 for the heavy rainfall season. DO was high in winter and low in summer according to the variation of water temperature. pH represented the variation similar to DO. Suspended solid was averagely high over 100 mg/l in Yeongkwang coastal area, especially. COD did not revealed large variation with the value of about 1 mg/l. DIN and DIP concentration were high when freshwater was highly input in summer. DIN concentration was low for winter and early spring but DIP concentration did not show the seasonal variation with the continuous increase from July 2009 to December 2009. Chlorophyll a appeared high for spring with approximately $10\;{\mu}g/l$ and was higher for summer in Yeongkwang coastal area than other sites. The results of principal component analysis conducted to compare the characteristics of water quality observed in study areas showed the distinguishable features as follows. The freshwater input fluctuation appeared as the first factor in Muan and Tando bays, and the change of water temperature was the first factor in Shinan Jido and Yeongkwang coastal areas. The influence mixed with the variation of freshwater outflow and the change of water temperature in Hampyeong bay was to be the first factor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.683-689
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• 2015

For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.2
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• pp.349-354
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• 2007

In this work, we investigated etching characteristics of $HfO_2$ thin film and Si using inductive coupled plasma(ICP) system. The ion energy distribution functions in an ICP system was analyzed by quadrupole mass spectrometer(QMS) with an electrostatic ion energy analyzer. The maximum etch rate of $HfO_2$ thin film is 85.5 nm/min at a $BCl_3/(BCl_3+Ar)$ of 20 % and decreased with further addition of $BCl_3$ gas. From the QMS measurements, the most dominant positive ion energy distributions(IEDS) showed a maximum at 20 % of $BCl_3$. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of $HfO_2$ over Si is 3.05 at a $O_2$ addition of 2 sccm into the $BCl_3/(BCl_3+Ar)$ of 20 % plasma.

• Nuclear Engineering and Technology
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• v.27 no.1
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• pp.141-153
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• 1995

SNU 1.5-MV 직렬형 반데그라프 가속기로부터 얻은 0.5~2.2 MeV He$^{++}$ 빔을 이용하여 러더포드 후방산란 분광법 (RBS, Rutherford Backscattering Spectrometry)으로 여러가지 시료의 표면적층을 분석하였다. 먼저 RBS 분석계통의 신뢰성을 확인하기 위하여 Micromatter사와 Charles Evans & Associates에서 제작한 14종 33개의 표준시료들에 대한 후방산란 실험을 수행하여, 각 층의 두께, 원소조성비 및 주입 이온의 깊이, 분포폭을 측정하였다. 결정된 이 값들은 제시된 값과 3% 이내로 일치하였다 이와 같이 본 RBS 분석계통의 신뢰성을 확인한 후, 분석을 의뢰받은 22종 87개의 시료에 대해, 빔에너지. 후방산란의 기하학적 구조 등의 최적 조건하에서 후방산란 실험을 수행하였다 그 결과, 분석가능한 두께의 한계를 벗어난 2종 3개의 시료를 제외한 나머지 모든 시료에 대해 각 층의 두께, 원소조성비 및 농도분포를 결정할 수 있었으며, 측정치의 통계오차는 8% 이내였다. 다양한 종류의 많은 시료들에 대한 표면적층 분석을 수행한 경험을 통하여, RBS 분석에서 신뢰도 높은 결과를 얻기 위해 분석계통에서 필수적으로 고려해야 할 요소들을 파악할 수 있었으며, 분석 결과에 대한 신뢰도는 분석 계통의 체계화뿐만 아니라 시료의 상태에 따라 크게 좌우됨을 알 수 있었다. 결론적으로 주의 깊은 시료준비와 RBS 분석계통의 최적화를 통해 신뢰도 높은 표면적층 분석이 가능함을 확인하였다.

• Journal of the Semiconductor & Display Technology
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• v.13 no.3
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• pp.39-43
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• 2014

The effect of electrode charging on the ion energy distribution (IED) was investigated in the dual-frequency capacitively coupled plasma source which was powered of 100 MHz RF at the top electrode and 400 kHz bias on the bottom electrode. The charging property was analyzed with the distortion of the measured current and voltage waveforms. The capacitance and the resistance of electrode sheath can change the property of ion and electron charging on the electrode so it is sensitive to the plasma density which is controlled by the main power. The ion energy distribution was estimated by equivalent circuit model, being compared with the measured distribution obtained from the ion energy analyzer. Results show that the low frequency bias power changes effectively the low energy population of ion in the energy distribution.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.117-118
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• 2006

In this work, we investigated etching characteristics of $HfO_2$ thin film and Si using inductive coupled plasma (ICP) system. The ion energy distribution functions in an inductively coupled plasma was analyzed by quadrupole mass spectrometer with an electrostatic ion energy analyzer. The maximum etch rate of $HfO_2$ is 85.5 nm/min at a $BCl_3/(BCl_3+Ar)$ of 20% and decreased with further addition of $BCl_3$ gas. From the QMS measurements, the most dominant positive ion energy distributions (IEDs) showed a maximum at 20 % of $BCl_3$. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of $HfO_2$ over Si is 3.05 at a O2 addition of 2 sccm into the $BCl_3/(BCl_3+ Ar)$ of 20% plasma.

• Applied Chemistry for Engineering
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• v.25 no.4
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• pp.346-351
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• 2014

With the world population's continuous growth and urban industrialization, capacitive deionization (CDI) has been proposed as a next-generation water treatment technology to augment the supply of water. As a future water treatment method, CDI attracts significant attention because it offers small energy consumption and low environmental impact in comparison to conventional methods. Carbon electrodes, which have large surface area and high conductivity, are mainly used as electrode materials of choice for the removal of ions in water. A variety of carbon materials have been investigated, including their adsorption-desorption behavior in accordance to the specific surface area and pore size distribution. In this review, we analyzed and highlighted these carbon materials and looked at the impact of pore size distribution to the overall CDI efficiency. Finally, we propose an optimal condition in the interplay between micropores and mesopores in order to provide the best electrosorption property for these carbon electrodes.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.622-625
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• 2005

본 연구의 목적은 동해 울릉분지 천부퇴적층의 공극수와 메탄의 특징 및 상호작용을 규명하는데 있다. 울릉분지에서 채취한 코어에서 공극수를 추출하여 분석한 결과, 공극수의 황산염 농도가 퇴적물의 심도가 증가할수록 감소하며, 감소하는 경향은 크게 세 가지 (직선성, concave down, upward kink)로 나뉨을 알 수 있었다. 이는 모든 코어에서 황산염 환원작용이 일어나고 있음을 지시한다 황산염 농도의 수직적 구배를 이용하여 SMI (sulfate-methane interface) 심도를 계산하면, 남부울릉분지가 북부울릉분지보다 낮은 값을 갖는다. 반면에 메탄 농도는 퇴적물의 심도가 증가할수록 전반적으로 증가하며, 공간적으로는 남부 울릉분지가 북부울릉보지보다 높다. 또한 남부울릉분지에서 메탄가스 농도는 SMI 심도 아래에서 급격히 증가한다 메탄가스의 탄소 안정동위원소$(\delta^{13}C)$ 분석 값들은 대부분 $-60\%_{\circ}$이하로서 이는 메탄가스가 열기원 보다는 박테리아기원임을 지시해준다 또한 남부 울릉분지에서 메탄의 탄소 안정동위원소 분석 값들은 메탄농도가 증가할수록 낮은 값을 보여 주는 데 이러한 결과들은 남부 울릉분지에서 무산소 메탄 산화작용이 일어나고 있음을 지시하고, 메탄의 상향 분산 (diffusion)량이 북부 울릉분지보다 많이 일어난다는 것을 의미한다. 공극수내 황산염 이온 농도 구배와 메탄가스 농도를 종합적으로 고려할 때, 울릉분지에서 가스하이드레이트의 부존가능성은 북부 울룽분지보다 남부 울릉분지가 높은 것으로 추정된다.